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元器件品牌
IRF710PBF
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRF710PBF
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：1020K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF710PBF参数
查看货源
IRF710R
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220AB
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26
ETC
IRF710R
2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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0
ROCHESTER
IRF710S
HEXFET Power MOSFET
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156
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52
IRF
IRF710SPBF
HEXFET㈢ Power MOSFET
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156
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29
IRF
IRF710STRL
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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0
IRF
IRF710STRLPBF
暂无描述
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0
IRF
IRF710STRLPBF
暂无描述
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0
VISHAY
IRF710STRR
暂无描述
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0
VISHAY
IRF710STRR
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
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0
IRF
IRF710STRRPBF
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
IRF711
N-Channel Power MOSFETs, 2.25A, 350-400V
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156
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72
FAIRCHILD
IRF711
Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
-
0
SAMSUNG
IRF711
2A, 350V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Warning
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156
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0
ROCHESTER
IRF711-001
Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
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156
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0
IRF
IRF711-002PBF
Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
IRF
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