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IRF723 [VISHAY]

Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
IRF723
型号: IRF723
厂家: VISHAY    VISHAY
描述:

Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

文件: 总1页 (文件大小:92K)
中文:  中文翻译
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相关型号:

IRF723-001

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-001PBF

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF723-002

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-002PBF

2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON

IRF723-003

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-003PBF

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-004

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-005

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-005PBF

2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON

IRF723-006

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-006PBF

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-009

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-009PBF

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-010

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-010PBF

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-011

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-011PBF

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF723-012

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-013

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF723-013PBF

2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON