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IRF730S [VISHAY]

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;

IRF730S


元器件型号：	IRF730S
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN 局域网开关脉冲晶体管
PDF文件：	总9页 (文件大小：179K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF730S参数

IRF730SPBF

HEXFET POWER MOSFET

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26 IRF

IRF730SPBF

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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1 VISHAY

IRF730STRL

暂无描述

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0 IRF

IRF730STRLPBF

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF730STRLPBF

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF730STRR

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF730STRRPBF

暂无描述

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0 IRF

IRF730U2

Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 MOTOROLA

IRF730U2

Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 MOTOROLA

IRF730WC

4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 MOTOROLA

IRF730WC

4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 MOTOROLA

IRF731

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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107 FAIRCHILD

IRF731

Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG

IRF731-004

Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF731-006

Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

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