IRF9130 [VISHAY]

Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204;
IRF9130
型号: IRF9130
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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IRF9130_03

P–CHANNEL POWER MOSFET

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18 SEME-LAB

IRF9130SMD

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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50 SEME-LAB

IRF9130SMD05

P-Channel

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27 ETC

IRF9130SMD05

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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20 SEME-LAB

IRF9131

P-CHANNEL POWER MOSFETS

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135 SAMSUNG

IRF9131

Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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1 VISHAY

IRF9131

Transistor

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1 SAMSUNG

IRF9132

P-CHANNEL POWER MOSFETS

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108 SAMSUNG

IRF9132

Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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0 VISHAY

IRF9132

Transistor

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0 SAMSUNG

IRF9132

10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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0 ROCHESTER

IRF9133

P-CHANNEL POWER MOSFETS

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85 SAMSUNG

IRF9140

P-CHANNEL POWER MOSFET

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229 SEME-LAB

IRF9140

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

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179 INTERSIL

IRF9140

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)

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382 IRF