IRF9510STRLPBF [VISHAY]

Power MOSFET; 功率MOSFET
IRF9510STRLPBF
元器件型号: IRF9510STRLPBF
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

Power MOSFET
功率MOSFET

晶体 晶体管 开关 脉冲
PDF文件: 总9页 (文件大小:176K)
下载文档:  下载PDF数据表文档文件
型号参数:IRF9510STRLPBF参数

IRF9510STRR

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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2 IRF

IRF9510STRR

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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3 VISHAY

IRF9510STRRPBF

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF9511

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-220AB

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117 ETC

IRF9511

Power Field-Effect Transistor, 3A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF9511

Power Field-Effect Transistor, 3A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9512

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.5A I(D) | TO-220AB

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118 ETC

IRF9513

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | TO-220AB

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428 ETC

IRF9513

暂无描述

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1 IRF

IRF9513

Power Field-Effect Transistor, 5A I(D), 60V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG

IRF9520

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

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473 INTERSIL

IRF9520

Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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13 SAMSUNG

IRF9520-002PBF

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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2 VISHAY

IRF9520-004PBF

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF9520-007PBF

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY