关闭背景特效

IRF9Z20PBF [VISHAY]

Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,;

IRF9Z20PBF


元器件型号：	IRF9Z20PBF
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 局域网开关脉冲晶体管
PDF文件：	总8页 (文件大小：1215K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9Z20PBF参数

IRF9Z22

P-CHANNEL 50 VOLT POWER MOSFETs

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39 IRF

IRF9Z22

Power MOSFET

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29 VISHAY

IRF9Z22

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9Z22-005

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z22-005PBF

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9Z22-013

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z22PBF

Power MOSFET

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18 VISHAY

IRF9Z24

Power MOSFET

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103 VISHAY

IRF9Z24

P-CHANNEL POWER MOSFETs

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454 SAMSUNG

IRF9Z24

POWER MOSFET

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210 IRF

IRF9Z24

POWER MOSFET

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200 IRF

IRF9Z24-005PBF

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRF9Z24-030

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRF9Z24-030PBF

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRF9Z24F

暂无描述

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1 VISHAY

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