IRF9Z24STRRPBF [VISHAY]

Power MOSFET; 功率MOSFET

IRF9Z24STRRPBF


型号：	IRF9Z24STRRPBF
厂家：	VISHAY TELEFUNKEN
描述：	Power MOSFET 功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：2304K)
下载：	下载PDF数据表文档文件

IRF9Z25

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8.9A I(D) | TO-220AB

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29 ETC

IRF9Z25

Transistor,

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0 IRF

IRF9Z25

Power Field-Effect Transistor, 8.9A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9Z30

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 18A I(D) | TO-220AB

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170 ETC

IRF9Z30

P-CHANNEL 50 VOLT POWER MOSFETS

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60 IRF

IRF9Z30-001PBF

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9Z30-002PBF

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9Z30-009PBF

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9Z30PBF

HEXFET POWER MOSFET

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35 IRF

IRF9Z30STRRPBF

Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF9Z32

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 15A I(D) | TO-220AB

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25 ETC

IRF9Z32

P-CHANNEL 50 VOLT POWER MOSFETS

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9 IRF

IRF9Z32

Power Field-Effect Transistor, 15A I(D), 50V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9Z32-002

Power Field-Effect Transistor, 15A I(D), 50V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z32-011

Power Field-Effect Transistor, 15A I(D), 50V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

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