IRFBC30AS_V01 [VISHAY]
Power MOSFET;
| 型号： | IRFBC30AS_V01 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总12页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
PRODUCT SUMMARY
VDS (V)
DS(on) ()
Qg (Max.) (nC)
600
R
VGS = 10 V
2.2
23
5.4
Q
Q
gs (nC)
gd (nC)
11
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
Configuration
Single
D
I2PAK (TO-262)
D2PAK (TO-263)
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
G
G
D
S
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
Lead (Pb)-free and Halogen-free
SiHFBC30AS-GE3
IRFBC30ASPbF
SiHFBC30AS-E3
SiHFBC30ASTRL-GE3a
IRFBC30ASTRLPbFa
SiHFBC30ASTL-E3a
SiHFBC30ASTRR-GE3a
IRFBC30ASTRRPbFa
SiHFBC30ASTR-E3a
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
VGS
30
T
C = 25 °C
3.6
2.3
Continuous Drain Current
VGS at 10 V
ID
TC = 100 °C
A
Pulsed Drain Currenta, e
IDM
14
Linear Derating Factor
0.69
290
W/°C
mJ
A
Single Pulse Avalanche Energyb
Avalanche Currenta
EAS
IAR
3.6
Repetiitive Avalanche Energya
EAR
7.4
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
74
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
dV/dt
TJ, Tstg
7.0
V/ns
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
c. ISD 3.6 A, dI/dt 170 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
-
°C/W
Maximum Junction-to-Case (Drain)
RthJC
1.7
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
600
-
-
-
V
V/°C
V
VDS Temperature Coefficient
-
2.0
-
0.67
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
-
-
-
-
4.5
100
25
250
2.2
-
VGS
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 A
=
30 V
nA
-
Zero Gate Voltage Drain Current
IDSS
μA
V
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
2.1
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
510
70
3.5
730
19
31
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
V
Reverse Transfer Capacitance
-
pF
V
DS = 1.0 V, f = 1.0 MHz
-
Output Capacitance
Coss
V
GS = 0 V
VDS = 480 V, f = 1.0 MHz
VDS = 0 V to 480 Vc
-
Effective Output Capacitance
Total Gate Charge
C
oss eff.
Qg
-
23
5.4
11
-
ID = 3.6 A, VDS = 480 V,
see fig. 6 and 13b
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
nC
ns
-
Turn-On Delay Time
Rise Time
9.8
13
19
12
-
V
DD = 300 V, ID = 3.6 A,
Rg = 12 , RD = 82 , see fig. 10b, d
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
3.6
14
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb,
-
-
-
-
1.6
600
1.7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
400
1.1
ns
μC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
d. Uses IRFBC30A/SiHFBC30A data and test conditions.
.
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Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
10
VGS
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
BOTTOM 4.5V
°
T = 150 C
J
1
1
°
T = 25 C
J
0.1
0.1
4.5V
20µs PULSE WIDTH
V
= 50V
DS
20µs PULSE WIDTH
°
T = 25 C
J
0.01
0.01
0.1
1
10
100
4.0
5.0
6.0
7.0 8.0
9.0
V
, Gate-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
GS
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
3.6A
=
I
D
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
20µs PULSE WIDTH
°
T = 150 C
J
V
=10V
GS
0.1
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
1
10
100
T , Junction Temperature ( C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91109
S11-1052-Rev. C, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
100
10000
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
10
Ciss
°
T = 150 C
J
Coss
Crss
°
T = 25 C
J
1
V
= 0 V
GS
1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
100
I
D
= 3.6A
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
V
V
V
= 480V
= 300V
= 120V
DS
DS
DS
16
12
8
10us
10
100us
1
1ms
4
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
FOR TEST CIRCUIT
SEE FIGURE 13
0.1
0
10
100
1000
10000
0
4
8
12
16 20
24
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
RD
VDS
4.0
3.0
2.0
1.0
0.0
VGS
D.U.T.
Rg
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
25
50
75
100
125
°
150
T , Case Temperature ( C)
C
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
Rg
D.U.T.
IAS
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12b - Unclamped Inductive Waveforms
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Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91109
S11-1052-Rev. C, 30-May-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
740
720
700
680
660
640
400
300
200
100
0
I
D
TOP
1.6A
2.3A
BOTTOM 3.6A
0.0
1.0
AV
2.0
3.0
4.0
25
50
75
100
125
150
I
, Avalanche Current ( A)
°
Starting T , Junction Temperature ( C)
J
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanache Current
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
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Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
VGS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91109.
Document Number: 91109
S11-1052-Rev. C, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220AB
MILLIMETERS
MIN.
INCHES
MIN.
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
12.70
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MAX.
0.183
0.040
0.068
0.024
0.610
0.500
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
12.19
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.480
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
D2
E
e
e(1)
F
1
3
2
H(1)
J(1)
L
*
M
L(1)
Ø P
Q
b(1)
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Revison: 16-Jun-14
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
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Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
A
B
A
(Datum A)
E
c2
A
E
L1
D
Seating
plane
D1
C
C
L2
B
B
L
A
c
E1
3 x b2
3 x b
A1
Section A - A
Base
metal
2 x e
b1, b3
Plating
M
M
B
0.010
A
c1
c
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MAX.
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
DIM.
MIN.
MAX.
MIN.
0.330
0.270
0.380
0.245
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
D
D1
E
8.38
6.86
9.65
6.22
9.65
0.380
A1
b
-
10.67
-
-
0.420
-
b1
b2
b3
c
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
c1
c2
3.56
0.140
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
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AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
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