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元器件品牌
IRFBC40LC
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRFBC40LC
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
晶体 晶体管 开关 局域网
PDF文件：
总8页 (文件大小：148K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFBC40LC参数
查看货源
IRFBC40LC-002
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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1
VISHAY
IRFBC40LC-002PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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1
VISHAY
IRFBC40LC-006PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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1
VISHAY
IRFBC40LC-010
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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1
VISHAY
IRFBC40LC-017PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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1
VISHAY
IRFBC40LC-019PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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1
VISHAY
IRFBC40LC-024PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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2
VISHAY
IRFBC40LC-031PBF
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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1
VISHAY
IRFBC40LCPBF
Power MOSFET
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156
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45
VISHAY
IRFBC40LPBF
Power MOSFET
Warning
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156
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19
VISHAY
IRFBC40LPBF
HEXFET㈢ Power MOSFET
Warning
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156
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28
IRF
IRFBC40PBF
HEXFET POWER MOSFET (VDSS=600V , RDS(on)=1.2Ohm , ID=6.2A)
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74
IRF
IRFBC40PBF
Power MOSFET
Warning
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156
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32
VISHAY
IRFBC40PBF
Power MOSFET
Warning
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156
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19
KERSEMI
IRFBC40R
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.2A I(D) | TO-220AB
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ETC
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