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元器件品牌
IRFBE30PBF
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRFBE30PBF
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：1451K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFBE30PBF参数
查看货源
IRFBE30S
Power MOSFET
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27
VISHAY
IRFBE30S
HEXFET㈢ Power MOSFET
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156
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65
IRF
IRFBE30SPBF
HEXFET Power MOSFET
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156
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46
IRF
IRFBE30SPBF
Power MOSFET
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156
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17
VISHAY
IRFBE30STRLPBF
Power MOSFET
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156
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24
VISHAY
IRFBE30STRR
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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0
VISHAY
IRFBE30STRRPBF
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Warning
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156
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0
VISHAY
IRFBE32
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.2A I(D) | TO-220AB
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52
ETC
IRFBF20
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
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148
IRF
IRFBF20
Power MOSFET
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156
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55
VISHAY
IRFBF20-002
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
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156
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0
VISHAY
IRFBF20-018PBF
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
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156
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0
VISHAY
IRFBF20-030PBF
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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0
VISHAY
IRFBF20-031PBF
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
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on line
156
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0
VISHAY
IRFBF20L
Power MOSFET
Warning
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156
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16
VISHAY
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