关闭背景特效

IRFBF20-002 [VISHAY]

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;

IRFBF20-002


元器件型号：	IRFBF20-002
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 局域网开关脉冲晶体管
PDF文件：	总2页 (文件大小：68K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFBF20-002参数

IRFBF20-018PBF

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRFBF20-030PBF

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRFBF20-031PBF

Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRFBF20L

Power MOSFET

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16 VISHAY

IRFBF20L

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

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34 IRF

IRFBF20LPBF

Power MOSFET

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25 VISHAY

IRFBF20LPBF

HEXFET Power MOSFET

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22 IRF

IRFBF20PBF

HEXFET㈢ Power MOSFET

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35 IRF

IRFBF20PBF

Power MOSFET

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31 VISHAY

IRFBF20S

Power MOSFET

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54 VISHAY

IRFBF20S

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

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76 IRF

IRFBF20SLPBF

暂无描述

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0 VISHAY

IRFBF20SPBF

Power MOSFET

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33 VISHAY

IRFBF20SPBF

HEXFET Power MOSFET

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23 IRF

IRFBF20STRL

Power MOSFET

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26 VISHAY

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