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IRFBG30 [VISHAY]

Power MOSFET; 功率MOSFET
IRFBG30
元器件型号： IRFBG30
生产厂家： VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用：

Power MOSFET
功率MOSFET
PDF文件： 总8页 (文件大小：1521K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFBG30参数
 查看货源

IRFBG30-001PBF

 Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRFBG30PBF

 Power MOSFET

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187 VISHAY

IRFBG32

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.1A I(D) | TO-220AB

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86 ETC

IRFBG32

 Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRFBG32-004PBF

 Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRFBG32-005PBF

 Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 INFINEON

IRFBL10N60A

 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR

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64 ETC

IRFBL10N60A

 HEXFET Power MOSFET

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20 IRF

IRFBL12N50A

 HEXFET㈢ Power MOSFET

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16 IRF

IRFBL12N50A

 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-263AA

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24 ETC

IRFBL17N50L

 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 17A I(D) | TO-263AB

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23 ETC

IRFBL17N50LPBF

 Power Field-Effect Transistor, 17A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 IRF

IRFBL18N50K

 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-263AB

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15 ETC

IRFBL3703

 Synchronous Rectification in High Power High Frequency DC/DC Converters

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57 IRF

IRFC014

 Power Field-Effect Transistor, 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF
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