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元器件品牌
IRFI620G
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRFI620G
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：1767K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFI620G参数
查看货源
IRFI620G-002PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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156
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0
INFINEON
IRFI620G-004PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-005PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-006
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-009
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-009PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-010PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-011PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-012PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
INFINEON
IRFI620G-013PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
-
0
INFINEON
IRFI620G-015PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
-
0
INFINEON
IRFI620G-017
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
IRFI620G-017PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
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0
INFINEON
IRFI620G-018PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
INFINEON
IRFI620G-019PBF
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
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0
INFINEON
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