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元器件品牌
IRFI840GLC
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号:
IRFI840GLC
生产厂家:
VISHAY TELEFUNKEN
描述和应用:
Power MOSFET
功率MOSFET
晶体 晶体管 开关 局域网
PDF文件:
总8页 (文件大小:1666K)
下载文档:
下载PDF数据表文档文件
型号参数:IRFI840GLC参数
查看货源
IRFI840GLCPBF
HEXFET Power MOSFET
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20
IRF
IRFI840GLCPBF
Power MOSFET
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23
VISHAY
IRFI840GPBF
Power MOSFET
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156
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19
VISHAY
IRFI840GPBF
HEXFET㈢ Power MOSFET
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156
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46
IRF
IRFI9520G
HEXFET POWER MOSFET
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156
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53
IRF
IRFI9520G
HEXFET POWER MOSFET
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156
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9
IRF
IRFI9520G
Power MOSFET
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16
VISHAY
IRFI9520G
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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1
VISHAY
IRFI9520G-003PBF
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
IRF
IRFI9520G-005PBF
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
IRF
IRFI9520G-011PBF
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
IRF
IRFI9520G-012PBF
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
IRF
IRFI9520G-013PBF
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
IRF
IRFI9520G-015
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
IRF
IRFI9520G-015PBF
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
VISHAY
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