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IRFR9210TRRPBF [VISHAY]

Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3;

IRFR9210TRRPBF


元器件型号：	IRFR9210TRRPBF
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 晶体晶体管功率场效应晶体管开关
PDF文件：	总8页 (文件大小：1583K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR9210TRRPBF参数

IRFR9211

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-252AA

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34 ETC

IRFR9212

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.6A I(D) | TO-252AA

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18 ETC

IRFR9212TR

Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR9214

Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

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134 IRF

IRFR9214

Power MOSFET

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24 KERSEMI

IRFR9214

Power MOSFET

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58 VISHAY

IRFR9214

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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3 VISHAY

IRFR9214PBF

Power MOSFET

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19 VISHAY

IRFR9214PBF

HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A )

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24 IRF

IRFR9214PBF

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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0 VISHAY

IRFR9214TR

Power MOSFET

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12 VISHAY

IRFR9214TR

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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0 VISHAY

IRFR9214TR

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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0 IRF

IRFR9214TRA

Power MOSFET

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1 KERSEMI

IRFR9214TRL

Power MOSFET

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13 VISHAY

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