IRFZ40 [VISHAY]

Power MOSFET; 功率MOSFET


型号：	IRFZ40
厂家：	VISHAY
描述：	Power MOSFET 功率MOSFET
文件：	总8页 (文件大小：1480K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFZ40, SiHFZ40

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

• 175 °C Operating Temperature

• Fast Switching

_DS(on)()

V_GS= 10 V

0.028

Q_g(Max.) (nC)

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

TO-220AB

The TO-220AB package is universially preferred for

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRFZ40PbF

SiHFZ40-E3

IRFZ40

Lead (Pb)-free

SnPb

SiHFZ40

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current^e

V_DS

V_GS

T_C= 25 °C

T_C= 100 °C

V_GSat 10 V

I_D

Continuous Drain Current

200

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

E_AS

P_D

100

T_C= 25 °C

150

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

- 55 to + 175

300

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 44 μH, R_g= 25 , I_AS= 51 A (see fig. 12).

c. I_SD 51 A, dI/dt  250 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Current limited by the package, (die current = 51 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

R_thJA

R_thCS

R_thJC

0.50

°C/W

1.0

SPECIFICATIONS (T_J= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNIT

Static

Drain-Source Breakdown Voltage

V_DSTemperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

V_DS

V_DS/T_J

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

Reference to 25 °C, I_D= 1 mA

V_DS= V_GS, I_D= 250 μA

V/°C

0.060

2.0

4.0

100

V_GS

V_DS= 60 V, V_GS= 0 V

V_DS= 48 V, V_GS= 0 V, T_J= 125 °C

V_GS= 10 V

I_D= 31 A^b

V_DS= 25 V, I_D= 31 A

20 V

Zero Gate Voltage Drain Current

I_DSS

μA

250

0.028

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs



Input Capacitance

C_iss

C_oss

C_rss

Q_g

1900

920

170

V_GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS= 25 V,

f = 1.0 MHz, see fig. 5

I_D= 51 A, V_DS= 48 V,

see fig. 6 and 13^b

_GS= 10 V

Gate-Source Charge

Q_gs

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Q_gd

t_d(on)

t_r

110

_DD= 30 V, I_D= 51 A,

R_g= 9.1 , R_D= 0.55 , see fig. 10^b

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

Between lead,

6 mm (0.25") from

package and center of

die contact

Internal Drain Inductance

Internal Source Inductance

L_D

L_S

4.5

7.5

Drain-Source Body Diode Characteristics

MOSFET symbol

Continuous Source-Drain Diode Current

I_S

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Current^a

I_SM

200

Body Diode Voltage

V_SD

t_rr

T_J= 25 °C, I_S= 51 A, V_GS= 0 V^b

2.5

180

0.80

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

120

0.53

T_J= 25 °C, I_F= 51 A, dI/dt = 100 A/s

Q_rr

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by L_Sand L_D)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T_C= 25 °C

Fig. 1 - Typical Transfer Characteristics

Fig. 2 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics, T_C= 175 °C

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

Fig. 5 - Typical Source-Drain Diode Forward Voltage

Fig. 3 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 3 - Maximum Safe Operating Area

Fig. 4 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

R_D

V_DS

V_GS

D.U.T.

R_G

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V_DS

90 %

10 %

V_GS

t_d(on)t_r

t_d(off)t_f

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V_DS

Vary t_pto obtain

required I_AS

t_p

V_DD

D.U.T.

R_G

V_DD

V_DS

I_AS

10 V

0.01 Ω

t_p

I_AS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

Q_G

10 V

12 V

0.2 µF

0.3 µF

Q_GS

Q_GD

V_DS

D.U.T.

V_G

V_GS

3 mA

Charge

I_G

I_D

Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test

www.vishay.com

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T.

• Low leakage inductance

current transformer

R_g

• dV/dt controlled by R_g

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor “D”

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

D =

Period

_GS= 10 V^a

D.U.T. l_SDwaveform

D.U.T. V_DSwaveform

Reverse

recovery

current

Body diode forward

current

dI/dt

Diode recovery

dV/dt

V_DD

Re-applied

voltage

Body diode forward drop

Inductor current

I_SD

Ripple ≤ 5 %

Note

a. V_GS= 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91385.

Document Number: 91385

S11-0520-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Document Number: 91000

Revision: 11-Mar-11

www.vishay.com

IRFZ40 [VISHAY]

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