IRKL105/10AS90 [VISHAY]
Silicon Controlled Rectifier, 235A I(T)RMS, 105000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-5;
| 型号： | IRKL105/10AS90 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 235A I(T)RMS, 105000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27133 rev. I 09/04
IRK.105 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Full compatible TO-240AA
105 A
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Mechanical Description
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
The Generation V of Add-A-pak module combine the
excellentthermalperformanceobtainedbytheusageof
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
@85°C
IRK.105
Units
105
235
A
IO(RMS) (*)
A
A
A
ITSM @50Hz
IFSM @60Hz
1785
1870
15.91
14.52
159.1
2
2
I t @50Hz
KA s
2
@60Hz
KA s
2
2
I √t
KA √s
VRRM range
TSTG
400to1600
- 40 to 150
- 40 to130
V
oC
oC
TJ
(*) As AC switch.
Document Number: 93742
www.vishay.com
1
IRK.105 Series
Bulletin I27133 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
VRSM , maximum
non-repetitive
VDRM , max. repetitive
IRRM
IDRM
130°C
mA
Voltage
peak off-state voltage,
Type number
Code
peak reverse voltage peak reverse voltage
gate open circuit
-
V
V
V
04
06
08
10
12
14
16
400
600
800
1000
1200
500
700
900
1100
1300
400
600
800
1000
1200
IRK.105
20
1400
1600
1500
1700
1400
1600
On-state Conduction
Parameters
IT(AV) Max. average on-state
current (Thyristors)
IF(AV) Max. average forward
current (Diodes)
IRK.105
105
Units
Conditions
180o conduction, half sine wave,
TC =85oC
IO(RMS Max. continuous RMS
) on-state current.
235
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
t =10ms No voltage
Sinusoidal
half wave,
Initial TJ =TJ max.
or
non-repetitive on-state
t =8.3ms reapplied
t =10ms 100%VRRM
t =8.3ms reapplied
t =10ms TJ =25oC,
t =8.3ms no voltage reapplied
t =10ms No voltage
t =8.3ms reapplied
t =10ms 100%VRRM
t =8.3ms reapplied
t =10ms TJ =25oC,
IFSM or forward current
I2t
Max. I2t for fusing
Initial TJ =TJ max.
KA2s
t =8.3ms no voltage reapplied
t =0.1to10ms,no voltage reappl. TJ=TJ max
Low level (3)
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
V
TJ = TJ max
0.85
High level (4)
r
Max. value of on-state
slope resistance (2)
2.37
2.25
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
VTM
Max. peak on-state or
ITM=π xIT(AV)
TJ = 25°C
1.64
V
VFM forward voltage
IFM =π x IF(AV)
di/dt Max. non-repetitive rate
TJ = 25oC, from 0.67 VDRM
,
of rise of turned on
current
Max. holding current
150
250
A/µs
mA
ITM =π x IT(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
p
r
IH
IL
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
Max. latching current
400
TJ=25oC,anode supply=6V,resistive load
2
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x p x IAV < I < p x IAV
(4) I > p x IAV
Document Number: 93742
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2
IRK.105 Series
Bulletin I27133 rev. I 09/04
Triggering
Parameters
IRK.105
Units
Conditions
PGM Max. peak gate power
12
3
W
PG(AV) Max. average gate power
IGM
Max. peak gate current
3
A
-VGM Max.peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
TJ =-40°C
TJ =25°C
TJ =125°C
TJ =-40°C
TJ =25°C
TJ =125°C
TJ=125oC,
rated VDRM applied
V
Anode supply=6V
resistive load
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
VGD Max. gate voltage
that will not trigger
0.25
6
V
TJ=125oC,
rated VDRM applied
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
T = 130oC, linear to 0.67 VDRM
,
J
500
V/µs
gate open circuit
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.105
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 130
-40to150
stg
RthJC Max. internal thermal
resistance, junction
to case
RthCS Typical thermal resistance
case to heatsink
0.135
Per module,DC operation
K/W
Mounting surface flat, smooth and greased
0.1
5
T
Mounting torque ± 10%
to heatsink
busbar
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Nm
3
wt
Approximate weight
110(4)
gr(oz)
Case style
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.105
Units
°C/ W
180o
0.04
120o
0.05
90o
60o
30o
0.12
180o
0.03
120o
0.05
90o
60o
30o
0.12
0.06
0.08
0.06
0.08
Document Number: 93742
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3
IRK.105 Series
Bulletin I27133 rev. I 09/04
Ordering Information Table
Device Code
IRK.106 types
With no auxiliary cathode
IRK
T
105
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
A : Gen V
* * Available with no auxiliary cathode.
To specify change:
105 to 106
e.g. : IRKT106/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
(1)
(1)
(1)
~
-
~
~
+
+
+
+
(2)
(2)
(3)
(2)
(2)
-
-
+
-
(3)
(3)
(3)
G1
K2 G2
(7) (6)
G1 K1
(4) (5)
K1
G1 K1
(4) (5)
K2 G2
(7)
(4) (5)
(6)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 93742
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4
IRK.105 Series
Bulletin I27133 rev. I 09/04
130
120
110
100
90
130
120
110
100
90
IRK.105.. Series
(DC) = 0.27 K/W
IRK.105.. Series
R
R
(DC) = 0.27 K/W
thJC
thJC
Conduction Angle
Conduction Period
30°
40
30°
60°
60
60°
90°
90°
80
80
120°
180°
120°
DC
180°
70
70
0
20
80
100 120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
200
180
160
140
120
100
80
180°
120°
90°
DC
180°
120°
90°
60°
30°
60°
30°
RM S Li m it
RM S Lim it
Conduction Period
60
Conduction Angle
60
40
IRK.105.. Series
Per Junction
T = 130°C
J
IRK.105.. Series
Per Junction
T = 130°C
J
40
20
20
0
0
0
20
40
60
80
100 120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 130°C
J
Initial T = 130°C
@60 Hz 0.0083 s
J
@50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junction
800
600
700
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Document Number: 93742
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5
IRK.105 Series
Bulletin I27133 rev. I 09/04
350
300
250
200
R
0
=
180°
120°
90°
.
2
0
.
K
1
/
W
K
/
W
0
-
.
3
D
K
60°
e
l
/
W
t
a
30°
R
0
.
5
K
/
W
150
100
50
Conduction Angle
IRK.105.. Series
Per Mod ule
T = 130°C
J
0
0
40
80
120 160 200 2400 20 40 60 80 100 120 140
Total RMSOutput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
t
h
S
180°
(Sine)
180°
A
(Rect)
0
.
3
K
/
W
2 x IRK.105.. Series
Single Phase Bridge
Connected
2
K
/
W
T
= 13 0° C
J
0
40
80
120
160
200 20
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
40 60 80 100 120 140
Total Output Current (A)
900
800
700
600
500
400
300
200
100
0
120°
(Rect)
0
.
2
K
/
W
3 x IRK.105.. Series
Three Phase Bridge
Connected
1
K
/
W
T = 130°C
J
0
40 80 120 160 200 240 280 20 40 60
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
80 100 120 140
Total Output Current (A)
Document Number: 93742
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6
IRK.105 Series
Bulletin I27133 rev. I 09/04
1000
100
10
T = 25° C
J
T = 130°C
J
IRK.105.. Series
Per Junction
1
0
0.5
1
1.5
2
2.5
3
3.5
InstantaneousOn-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
140
700
600
500
400
300
200
100
I
= 200 A
100 A
TM
IRK.105.. Series
J
I
= 200 A
IRK.105.. Series
T = 125 °C
J
TM
T = 125 °C
120
100
80
100 A
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
1
Steady State Value:
R
= 0.27 K/W
thJC
(DC Operation)
0.1
IRK.105.. Series
Pe r Junc t io n
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
Document Number: 93742
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7
IRK.105 Series
Bulletin I27133 rev. I 09/04
100
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
10
1
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
IRK.105.. Series
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
InstantaneousGate Current (A)
Fig. 14- Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
09/04
Document Number: 93742
www.vishay.com
8
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
1
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