IRKL500-12PBF [VISHAY]
Silicon Controlled Rectifier, 785A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, LEAD FREE, POWER, SUPER MAGN-A-PAK-5;
| 型号： | IRKL500-12PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 785A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, LEAD FREE, POWER, SUPER MAGN-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27202 09/05
IRK.500-..PbF SERIES
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
SUPER MAGN-A-pakTM Power Modules
Features
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
500 A
Industrial standard package
Lead-Free
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters
Values
Units
IT(AV) or IF(AV)
500
A
@TC
82
°C
IT(RMS)
785
A
@TC
82
°C
ITSMor IFSM @50Hz
17.8
18.7
1591
1452
KA
KA
@60Hz
2
2
I t
@50Hz
@60Hz
KA s
2
KA s
2
2
I √t
15910
KA √s
VDRM/VRRM range
800 to 1600
V
TSTG
TJ
range
range
-40to150
-40to130
°C
°C
Document Number: 94420
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1
IRK.500-..PbF Series
Bulletin I27202 09/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
Type number
IRK.500
peak reverse voltage
repetitive peak rev. voltage
@ TJ = TJ max.
V
V
mA
08
12
14
16
800
900
1200
1400
1600
1300
1500
1700
100
On-state Conduction
Parameter
Values
Units Conditions
IT(AV)
IF(AV)
Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS on-state current
500
82
A
°C
A
180° conduction, half sine wave
785
180° conduction, half sine wave @ TC = 82°C
ITSM
IFSM
Maximum peak, one-cycle,
non-repetitive surge current
17.8
18.7
KA
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
15.0
15.7
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
1591
1452
1125
1027
15910
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2√s t = 0.1 to 10ms, no voltage reapplied
I2√t
Maximum I2√t for fusing
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
0.85
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
0.93
0.36
r
Low level value of on-state slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
t1
r
High level value of on-state slope resistance
Maximum on-state or forward
voltage drop
0.32
1.50
(I > π x IT(AV)), TJ = TJ max.
t2
VTM
VFM
V
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
IH
IL
Maximum holding current
Typical latching current
500
mA TJ = 25°C, anode supply 12V resistive load
1000
Switching
Parameter
Values
1000
Units Conditions
di/dt
Maximum rate of rise of turned-on
current
A/µs TJ = TJ max., ITM = 400A, VDRM applied
t
Typical delay time
2.0
µs
µs
Gate current 1A, di /dt = 1A/µs
g
d
V
= 0.67% VDRM , TJ = 25°C
d
t
Typical turn-off time
200
ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
q
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Document Number: 94420
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2
IRK.500-..PbF Series
Bulletin I27202 09/05
Blocking
Parameter
Values
1000
Units Conditions
V/µs TJ = 130°C., linear to VD = 80% VDRM
dv/dt
Maximum critical rate of rise of off-state
voltage
VINS
IRRM
IDRM
RMS isolation voltage
3000
100
V
t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
Values
Units Conditions
PGM
Maximum peak gate power
10
2.0
3.0
20
W
W
A
T = T max., t < 5ms
p
J J
PG(AV) Maximum peak average gate power
+ IGM Maximum peak positive gate current
+ VGM Maximum peak positive gate voltage
TJ = TJ max., f = 50Hz, d% = 50
T = T max., t < 5ms
p
J
J
V
- VGM Maximum peak negative gate voltage
5.0
200
3.0
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
mA TJ = 25°C Vak 12V
TJ = 25°C Vak 12V
VGT
V
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA TJ = TJ max.
V
VGD
0.25
Thermal and Mechanical Specifications
Parameter
Values
- 40 to 130
- 40 to 150
0.065
Units Conditions
°C
TJ
Max.junctionoperatingtemperaturerange
Max. storage temperature range
T
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
K/W
case
RthC-hs Max. thermal resistance, case to
heatsink
0.02
A mounting compound is recommended and the
Nm
T
Mountingtorque ±10% SMAPtoheatsink
busbartoSMAP
6-8
12-15
1500
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
wt
Approximate weight
g
Case style
SUPERMAGN-A-pak See outline table
Document Number: 94420
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3
IRK.500-..PbF Series
Bulletin I27202 09/05
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.011
0.014
0.021
0.037
0.006
0.011
0.015
0.022
0.038
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
IRK
T
500
-
16 PbF
3
4
5
1
2
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configurations Table)
Current rating
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Lead-Free
Circuit Configurations Table
IRKT
IRKH
IRKL
1
~
1
1
~
~
+
+
2
+
2
2
-
3
-
3
-
3
7(K2)
4(K1) 7(K2)
4(K1)
6(G2)
5(G1)
6(G2)
5(G1)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 94420
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4
IRK.500-..PbF Series
Bulletin I27202 09/05
Outline Table
All dimensions in millimeters (inches)
130
120
110
100
90
130
120
110
IRK.500.. Series
(DC) = 0.065 K/ W
IRK.500.. Series
thJC
R
R
(DC) = 0.065 K/ W
thJC
Conduction Angle
Conduction Period
100
90
80
70
60
30°
60°
80
30°
60°
90°
120°
180°
90°
120°
70
DC
180°
60
0
100 200 300 400 500 600
Average On-state Current (A)
0
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Document Number: 94420
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5
IRK.500-..PbF Series
Bulletin I27202 09/05
700
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
180°
120°
90°
60°
30°
600
500
400
300
200
100
0
60°
30°
RM S Lim it
RM S Lim it
Conduction Period
Conduction Angle
IRK.500.. Series
Per Junction
IRK.500.. Series
Per Junc tio n
T = 1 30° C
J
T = 130°C
J
0
100
200
300
400
500
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
16000
15000
14000
13000
12000
11000
10000
9000
18000
16000
14000
12000
10000
8000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 130°C
Of Conduction May Not Be Maintained.
J
Initial T = 130°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.500.. Series
Pe r Junc t io n
IRK.500.. Series
Per Junc t io n
8000
6000
7000
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
750
0
700
650
600
550
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
0
R
.
0
.
1
9
2
K
K
/
/
W
W
=
0
60°
.
0
0
.
2
7
30°
K
Conduction Angle
K
/
W
/
W
-
D
e
l
t
a
R
IRK.500.. Series
Per Module
T = 130°C
J
0
0
100 200 300 400 500 600 700 800
To t a l RM S O u t p u t C u r re n t ( A )
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
Document Number: 94420
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6
IRK.500-..PbF Series
Bulletin I27202 09/05
3000
2500
2000
1500
1000
500
R
180°
(Sine)
180°
0
.
0
2
K
/
W
=
0
0
.
0
.
3
0
(Rect)
1
K
/
K
W
/
W
-
D
e
l
t
a
R
2 x IRK.500.. Series
Si n g le Ph a se Bri d g e
Connected
T
= 130°C
J
0
0
200
400
600
800
10
00 20
40
60
80
100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
120°
(Rect)
0
.
0
2
K
/
W
3 x IRK.500.. Series
Th r e e Ph a se Br id g e
Connected
T = 130°C
J
0
0
250 500 750 1000 1250 15
00 20
40
60
80
100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
0.1
10000
1000
100
IRK.500.. Series
Per Junction
T = 25 ° C
J
0.01
T = 13 0° C
J
Steady State Value:
= 0.065 K/W
IRK.500.. Series
Per Junc tio n
R
thJC
(DC Operation)
0.001
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.001
0.01
0.1
1
10
100
InstantaneousOn-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Document Number: 94420
www.vishay.com
7
IRK.500-..PbF Series
Bulletin I27202 09/05
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
IRK.500.. Series Frequency Limited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
Inst a nt a ne o us G a t e Curre nt (A)
Fig. 12 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
09/05
Document Number: 94420
www.vishay.com
8
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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1
相关型号：
IRKL500-14
Silicon Controlled Rectifier, 785A I(T)RMS, 500000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, SUPER MAGN-A-PAK-4
VISHAY
IRKL500-14PBF
Silicon Controlled Rectifier, 785A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, LEAD FREE, POWER, SUPER MAGN-A-PAK-5
VISHAY
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