IRLZ34STRL [VISHAY]
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3;
| 型号： | IRLZ34STRL |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 |
| 文件： | 总11页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.905A
IRLZ34S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRLZ34S)
l Low-profile through-hole (IRLZ34L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 60V
RDS(on) = 0.050Ω
G
l Fully Avalanche Rated
ID = 30A
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34L) is available for low-
profile applications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
30
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
21
A
110
3.7
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
88
Linear Derating Factor
0.59
± 10
220
4.5
W/°C
V
VGS
EAS
dv/dt
TJ
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
V/ns
-55 to + 175
°C
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
Max.
1.7
40
Units
RθJC
RθJA
°C/W
–––
8/25/97
www.vishay.com
Document Number: 90418
1
IRLZ34S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 1mAꢀ
––– ––– 0.05
––– ––– 0.07
VGS = 5.0V, ID = 18A
VGS = 4.0V, ID = 15A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 18Aꢀ
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 10V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
12
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 35
––– ––– 7.1
––– ––– 25
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 30A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 5.0V, See Fig. 6 and 13 ꢀ
–––
14 –––
VDD = 30V
––– 170 –––
ID = 30A
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
30 –––
56 –––
RG = 6.0Ω
RD = 1.0Ω, See Fig. 10 ꢀ
Between lead,
and center of die contact
VGS = 0V
LS
Internal Source Inductance
7.5
nH
pF
–––
–––
Ciss
Coss
Crss
Input Capacitance
––– 1600 –––
––– 660 –––
––– 170 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
30
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
110
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.6
––– 120 180
V
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A
ns
Qrr
ton
––– 700 1300 nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRLZ34 data and test conditions
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 290µH
RG = 25Ω, IAS = 30A. (See Figure 12)
ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Document Number: 90418
www.vishay.com
2
IRLZ34S/L
Document Number: 90418
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3
IRLZ34S/L
Document Number: 90418
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4
IRLZ34S/L
Document Number: 90418
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5
IRLZ34S/L
Document Number: 90418
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6
IRLZ34S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
Document Number: 90418
www.vishay.com
7
IRLZ34S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
NOTES:
LEAD ASSIGNM ENTS
1 - GATE
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOU RC E
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMEN SION S DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
LOT CODE
YY = YEAR
W W = W EEK
Document Number: 90418
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8
IRLZ34S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
Document Number: 90418
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9
IRLZ34S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
F EED D IR EC TIO N
1 .8 5 (.0 7 3 )
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
1 .6 5 (.0 6 5 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
TR L
1. 75 (.0 69 )
1. 25 (.0 49 )
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE ED D IR EC TION
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
6 0.0 0 (2 .36 2)
M IN .
3 0.4 0 (1 .19 7)
M A X .
N O T ES
:
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D
4. IN C LU D E S F L AN G E D IS T O R T IO N
26 .40 (1. 03 9)
24 .40 (.9 61 )
4
@ H U B .
3
@
O U T E R ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
8/97
Document Number: 90418
www.vishay.com
10
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
1
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