J105-TR1 [VISHAY]
Transistor;型号: | J105-TR1 |
厂家: | VISHAY |
描述: | Transistor |
文件: | 总6页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
J105/106/107
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (ꢀ ) ID(off) Typ (pA)
tON Typ (ns)
J105
J106
J107
–4.5 to –10
–2 to –6
3
6
8
10
10
10
14
14
14
–0.5 to –4.5
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: J105 < 3
D Fast Switching—tON: 14 ns
D Low Leakage: 10 pA
ꢀ
D Low Error Voltage
D Analog Switches
D Choppers
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Low Capacitance: 20 pF
D Low Insertion Loss
D Eliminates Additional Buffering
DESCRIPTION
The J105/106/107 are high-performance JFET analog
switches designed to offer low on-resistance and fast
switching. rDS(on) <3 ꢀ is guaranteed for the J105 making this
device the lowest of any commercially available JFET.
The low cost TO-226AA (TO-92) plastic package is available
in a wide range of tape-and-reel options (see Packaging
Information). For similar products in TO-206AC (TO-52)
packaging, see the U290/291 data sheet.
TO-226AA
(TO-92)
1
2
3
D
S
G
Top View
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-1
J105/106/107
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J105
J106
J107
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 ꢁA , V = 0 V
–35
–25
–25
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 5 V, I = 1 ꢁA
–4.5
–10
–3
–2
–6
–3
–0.5
–4.5
–3
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
500
200
100
mA
DSS
DS
GS
V
= –15 V, V = 0 V
–0.02
–10
–0.01
0.01
5
GS
DS
Gate Reverse Current
I
GSS
T
A
= 125_C
b
Gate Operating Current
I
G
V
V
= 10 V, I = 25 mA
nA
DG
D
= 5 V, V = –10 V
3
3
3
6
3
8
DS
GS
Drain Cutoff Current
I
D(off)
T
A
= 125_C
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, I = 1 mA
ꢀ
DS(on)
GS
D
V
I
= 1 mA , V = 0 V
0.7
V
GS(F)
G
DS
Dynamic
Common-Source Forward
Transconductance
g
55
5
fs
b
V
= 10 V, I = 25 mA
D
f = 1 kHz
DS
mS
Common-Source
Output Conductance
g
os
b
V
= 0 V, I = 0 mA
D
f = 1 kHz
GS
Drain-Source On-Resistance
r
3
6
8
ꢀ
ds(on)
Common-Source
Input Capacitance
V
= 0 V, V = 0 V
GS
f = 1 MHz
DS
C
120
20
3
160
35
160
35
160
35
iss
pF
Common-Source Reverse Transfer
Capacitance
V
= 0 V, V = –10 V
DS
GS
C
rss
f = 1 MHz
Equivalent Input
Noise Voltage
V
= 10 V, I = 25 mA
D
f = 1 kHz
nV⁄
√Hz
DG
e
n
Switching
t
6
8
5
9
d(on)
Turn-On Time
t
r
V
= 1.5 V, V
= 0 V
DD
GS(H)
ns
See Switching Diagram
t
d(off)
Turn-Off Time
Notes
t
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NVA
b. Pulse test: PW v300 ꢁs duty cycle v3%.
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-2
J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
20
2 .0
10
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 10 V, VGS = 0 V
T
A
= 25_C
16
12
8
8
6
4
2
0
1.6
1.2
0.8
0.4
VGS(off) = –3 V
rDS
IDSS
–5 V
4
0
–8 V
0
0
–2
–4
–6
–8
–10
10
100
ID – Drain Current (mA)
1000
VGS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
Output Characteristics
10
500
ID = 10 mA
DS changes X 0.7%/_C
VGS(off) = –5 V
V
= 0 V
GS
r
400
300
8
6
4
2
0
–0.5 V
–1.0 V
VGS(off) = –3 V
–1.5 V
–2.0 V
–5 V
200
–8 V
–2.5 V
–3.0 V
100
0
–55 –35 –15
5
25
45
65
85 105 125
2
4
6
8
10
T
A
– Temperature (_C)
VDS – Drain-Source Voltage (V)
Turn-On Switching
Turn-Off Switching
20
t
independent of device VGS(off)
d(off)
t approximately independent of ID
r
VDD = 1.5 V, VGS(L) = –10 V
VDD = 1.5 V, RG = 50
ꢀ
VGS(L) = –10 V
16
12
t
r
t
@ ID = 30 mA
t
d(off)
d(on)
8
4
0
8
4
0
t
f
VGS(off) = –3 V
t
@ ID = 10 mA
VGS(off) = –8 V
d(on)
0
–2
–4
–6
–8
–10
0
10
20
30
40
50
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-3
J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Capacitance vs. Gate-Source Voltage
Transconductance vs. Drain Current
150
200
V
= –5 V
V
= 10 V
DS
GS(off)
VDS = 0 V
f = 1 MHz
f = 1 kHz
100
120
90
60
30
0
T
A
= –55_C
25_C
C
iss
10
125_C
C
rss
1
0
–4
–8
–12
–16
–20
1
10
– Drain Current (mA)
100
VGS – Gate-Source Voltage (V)
I
D
Output Conductance vs. Drain Current
Noise Voltage vs. Frequency
20
10
100
VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
VDG = 10 V
T
A
= –55_C
25_C
10
ID = 10 mA
1
125_C
0.1
1
1
10
ID – Drain Current (mA)
100
10
100
1 k
f – Frequency (Hz)
10 k
100 k
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
300
30
100 nA
10 nA
T
= 125_C
A
g
V
and g @ VDS = 10 V
os
fs
= 0 V, f = 1 kHz
GS
100 mA
260
220
24
IGSS @ 125_C
25 mA
1 nA
g
fs
18
12
100 mA
g
os
100 pA
25 mA
T
A
= 25_C
180
140
100
IGSS @ 25_C
10 pA
1 pA
6
0
0
–2
–4
–6
–8
–10
0
4
8
12
16
20
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-4
J105/106/107
Vishay Siliconix
VDD
SWITCHING TIME TEST CIRCUIT
J105
J106
J107
RL
VGS(L)
–12V
–7V
–5V
*
R
L
ꢂ
ꢃ
ꢀ
ꢂ
ꢃ
ꢀ
ꢂ ꢃ ꢀ
OUT
ID(on)
28 mA
27 mA
26 mA
V
GS(H)
*Non-inductive
Input Pulse
Sampling Scope
VGS(L)
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
1 k
ꢀ
ꢀ
51 ꢀ
ꢀ
VIN
Scope
51
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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