J107 [VISHAY]

N-Channel JFETs; N沟道JFET的
J107
型号: J107
厂家: VISHAY    VISHAY
描述:

N-Channel JFETs
N沟道JFET的

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J105/106/107  
Vishay Siliconix  
N-Channel JFETs  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max () ID(off) Typ (pA)  
tON Typ (ns)  
J105  
J106  
J107  
–4.5 to –10  
–2 to –6  
3
6
8
10  
10  
10  
14  
14  
14  
–0.5 to –4.5  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: J105 < 3  
D Fast Switching—tON: 14 ns  
D Low Leakage: 10 pA  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error,” Excellent Accuracy  
D Good Frequency Response  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Capacitance: 20 pF  
D Low Insertion Loss  
D Eliminates Additional Buffering  
DESCRIPTION  
The J105/106/107 are high-performance JFET analog  
switches designed to offer low on-resistance and fast  
switching. rDS(on) <3 is guaranteed for the J105 making this  
device the lowest of any commercially available JFET.  
The low cost TO-226AA (TO-92) plastic package is available  
in a wide range of tape-and-reel options (see Packaging  
Information). For similar products in TO-206AC (TO-52)  
packaging, see the U290/291 data sheet.  
TO-226AA  
(TO-92)  
1
2
3
D
S
G
Top View  
ABSOLUTE MAXIMUM RATINGS  
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Notes  
a. Derate 2.8 mW/_C above 25_C  
Document Number: 70230  
S-04028—Rev. D, 04-Jun-01  
www.vishay.com  
7-1  
J105/106/107  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
J105  
J106  
J107  
Parameter  
Symbol  
Test Conditions  
Typa Min Max Min Max Min Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= 1 A , V = 0 V  
35  
25  
25  
25  
(BR)GSS  
DS  
V
Gate-Source Cutoff Voltage  
V
V
= 5 V, I = 1 A  
4.5  
10  
3  
2  
6  
3  
0.5  
4.5  
3  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= 15 V, V = 0 V  
500  
200  
100  
mA  
DSS  
DS  
GS  
V
= 15 V, V = 0 V  
0.02  
10  
0.01  
0.01  
5
GS  
DS  
Gate Reverse Current  
I
GSS  
T
A
= 125_C  
b
Gate Operating Current  
I
G
V
V
= 10 V, I = 25 mA  
nA  
DG  
D
= 5 V, V = 10 V  
3
3
3
6
3
8
DS  
GS  
Drain Cutoff Current  
I
D(off)  
T
A
= 125_C  
Drain-Source On-Resistance  
Gate-Source Forward Voltage  
r
V
= 0 V, I = 1 mA  
DS(on)  
GS  
D
V
I
= 1 mA , V = 0 V  
0.7  
V
GS(F)  
G
DS  
Dynamic  
Common-Source Forward  
Transconductance  
g
55  
5
fs  
b
V
= 10 V, I = 25 mA  
D
f = 1 kHz  
DS  
mS  
Common-Source  
Output Conductance  
g
os  
b
V
= 0 V, I = 0 mA  
D
f = 1 kHz  
GS  
Drain-Source On-Resistance  
r
3
6
8
ds(on)  
Common-Source  
Input Capacitance  
V
= 0 V, V = 0 V  
GS  
f = 1 MHz  
DS  
C
120  
20  
3
160  
35  
160  
35  
160  
35  
iss  
pF  
Common-Source Reverse Transfer  
Capacitance  
V
= 0 V, V = 10 V  
DS  
GS  
C
rss  
f = 1 MHz  
Equivalent Input  
Noise Voltage  
V
= 10 V, I = 25 mA  
D
f = 1 kHz  
nV⁄  
Hz  
DG  
e
n
Switching  
t
6
8
5
9
d(on)  
Turn-On Time  
t
r
V
= 1.5 V, V  
= 0 V  
DD  
GS(H)  
ns  
See Switching Diagram  
t
d(off)  
Turn-Off Time  
Notes  
t
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
NVA  
b. Pulse test: PW v300 s duty cycle v3%.  
Document Number: 70230  
S-04028Rev. D, 04-Jun-01  
www.vishay.com  
7-2  
J105/106/107  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance and Drain Current  
vs. Gate-Source Cutoff Voltage  
On-Resistance vs. Drain Current  
20  
2 .0  
10  
rDS @ ID = 10 mA, VGS = 0 V  
IDSS @ VDS = 10 V, VGS = 0 V  
T
A
= 25_C  
16  
12  
8
8
6
4
2
0
1.6  
1.2  
0.8  
0.4  
VGS(off) = 3 V  
rDS  
IDSS  
5 V  
4
0
8 V  
0
0
2  
4  
6  
8  
10  
10  
100  
ID Drain Current (mA)  
1000  
VGS(off) Gate-Source Cutoff Voltage (V)  
On-Resistance vs. Temperature  
Output Characteristics  
10  
500  
ID = 10 mA  
DS changes X 0.7%/_C  
VGS(off) = 5 V  
V
= 0 V  
GS  
r
400  
300  
8
6
4
2
0
0.5 V  
1.0 V  
VGS(off) = 3 V  
1.5 V  
2.0 V  
5 V  
200  
8 V  
2.5 V  
3.0 V  
100  
0
55 35 15  
5
25  
45  
65  
85 105 125  
2
4
6
8
10  
T
A
Temperature (_C)  
VDS Drain-Source Voltage (V)  
Turn-On Switching  
Turn-Off Switching  
20  
t
independent of device VGS(off)  
d(off)  
t approximately independent of ID  
r
VDD = 1.5 V, RG = 50 ꢀ  
VGS(L) = 10 V  
VDD = 1.5 V, VGS(L) = 10 V  
16  
12  
t
r
t
@ ID = 30 mA  
t
d(off)  
d(on)  
8
4
0
8
4
0
t
f
VGS(off) = 3 V  
t
@ ID = 10 mA  
VGS(off) = 8 V  
d(on)  
0
2  
4  
6  
8  
10  
0
10  
20  
30  
40  
50  
VGS(off) Gate-Source Cutoff Voltage (V)  
ID Drain Current (mA)  
Document Number: 70230  
S-04028Rev. D, 04-Jun-01  
www.vishay.com  
7-3  
J105/106/107  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Capacitance vs. Gate-Source Voltage  
Transconductance vs. Drain Current  
150  
200  
V
= 5 V  
V
= 10 V  
DS  
GS(off)  
VDS = 0 V  
f = 1 MHz  
f = 1 kHz  
100  
120  
90  
60  
30  
0
T
A
= 55_C  
25_C  
C
iss  
10  
125_C  
C
rss  
1
0
4  
8  
12  
16  
20  
1
10  
Drain Current (mA)  
100  
VGS Gate-Source Voltage (V)  
I
D
Output Conductance vs. Drain Current  
Noise Voltage vs. Frequency  
20  
10  
100  
VGS(off) = 5 V  
VDS = 10 V  
f = 1 kHz  
VDG = 10 V  
T
A
= 55_C  
25_C  
10  
ID = 10 mA  
1
125_C  
0.1  
1
1
10  
ID Drain Current (mA)  
100  
10  
100  
1 k  
f Frequency (Hz)  
10 k  
100 k  
Forward Transconductance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
Gate Leakage Current  
300  
30  
100 nA  
10 nA  
T
= 125_C  
A
g
V
and g @ VDS = 10 V  
os  
fs  
= 0 V, f = 1 kHz  
GS  
100 mA  
260  
220  
24  
IGSS @ 125_C  
25 mA  
1 nA  
g
fs  
18  
12  
100 mA  
g
os  
100 pA  
25 mA  
T
A
= 25_C  
180  
140  
100  
IGSS @ 25_C  
10 pA  
1 pA  
6
0
0
2  
4  
6  
8  
10  
0
4
8
12  
16  
20  
VGS(off) Gate-Source Cutoff Voltage (V)  
VDG Drain-Gate Voltage (V)  
Document Number: 70230  
S-04028Rev. D, 04-Jun-01  
www.vishay.com  
7-4  
J105/106/107  
Vishay Siliconix  
VDD  
SWITCHING TIME TEST CIRCUIT  
J105  
12V  
ꢂ ꢃ ꢀ  
J106  
7V  
J107  
5V  
RL  
VGS(L)  
*
R
L
ꢂ ꢃ ꢀ  
ꢂ ꢃ ꢀ  
OUT  
ID(on)  
28 mA  
27 mA  
26 mA  
V
GS(H)  
*Non-inductive  
Input Pulse  
Sampling Scope  
VGS(L)  
Rise Time < 1 ns  
Fall Time < 1 ns  
Pulse Width 100 ns  
PRF 1 MHz  
Rise Time 0.4 ns  
Input Resistance 10 Mꢀ  
Input Capacitance 1.5 pF  
1 kꢀ  
51 ꢀ  
51 ꢀ  
VIN  
Scope  
Document Number: 70230  
S-04028Rev. D, 04-Jun-01  
www.vishay.com  
7-5  

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