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J109-TR3 [VISHAY]

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN;
J109-TR3
型号： J109-TR3
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN

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J/SST108 Series  
Vishay Siliconix  
N–Channel JFETs  
J108  
SST108  
SST109  
SST110  
J109  
J110  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max (W)  
ID(off) Typ (pA)  
tON Typ (ns)  
J/SST108  
J/SST109  
J/SST110  
–3 to –10  
–2 to –6  
8
20  
20  
20  
4
4
4
12  
18  
–0.5 to –4  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: J108 <8 W  
D Fast Switching—tON: 4 ns  
D Low Leakage: 20 pA  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error” Excellent Accuracy  
D Good Frequency Response  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Capacitance: 11 pF  
D Low Insertion Loss  
D Eliminates Additional Buffering  
DESCRIPTION  
The J/SST108 series is designed with high-performance  
analog switching applications in mind. It features low  
on-resistance, good off-isolation, and fast switching.  
The TO-226AA (TO-92) plastic package provides a  
low-cost option. Both the J and SST series are available  
in tape-and-reel for automated assembly (see Packaging  
Information).  
For similar products packaged in  
TO-206AC (TO-52), see the 2N5432/5433/5434 data  
sheet.  
The SST108 series is comprised of surface-mount  
devices featuring the lowest rDS(on) of any TO-236  
(SOT-23) JFET device.  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
D
S
1
2
1
2
3
D
S
3
G
G
Top View  
SST108 (I8)*  
SST109 (I9)*  
SST110 (I0)*  
Top View  
*Marking Code for TO-236  
J108, J109, J110  
Document Number: 70231  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-1  
J/SST108 Series  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
Notes  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a. Derate 2.8 mW/_C above 25_C  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
J/SST108  
J/SST109  
J/SST110  
Parameter  
Symbol  
Test Conditions  
Typa  
Min Max Min Max Min Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= –1 mA , V = 0 V  
–32  
–25  
–25  
–25  
(BR)GSS  
DS  
V
Gate-Source Cutoff Voltage  
V
V
= 5 V, I = 1 mA  
–3  
–10  
–3  
–2  
–6  
–3  
–0.5  
–4  
–3  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= 15 V, V = 0 V  
80  
40  
10  
mA  
DSS  
DS  
GS  
V
= –15 V, V = 0 V  
–0.01  
–5  
GS  
DS  
Gate Reverse Current  
Gate Operating Current  
Drain Cutoff Current  
I
GSS  
T
A
= 125_C  
I
G
–0.01  
0.02  
1.0  
V
V
= 10 V, I = 10 mA  
nA  
DG  
D
= 5 V, V = –10 V  
3
8
3
3
DS  
GS  
I
D(off)  
T
A
= 125_C  
Drain-Source  
On-Resistance  
r
V
= 0 V, V v 0.1 V  
12  
W
18  
DS(on)  
GS  
DS  
Gate-Source  
Forward Voltage  
V
I
G
= 1 mA , V = 0 V  
0.7  
V
GS(F)  
DS  
Dynamic  
Common-Source  
Forward Transconductance  
g
17  
fs  
V
= 5 V, I = 10 mA, f = 1 kHz  
D
mS  
DS  
Common-Source  
Output Conductance  
g
os  
0.6  
Drain-Source  
On-Resistance  
r
V
= 0 V, I = 0 mA , f = 1 kHz  
GS D  
W
8
12  
18  
ds(on)  
V
= 0 V  
= 0 V  
SST  
J Series  
SST  
60  
60  
11  
11  
DS  
Common-Source  
Input Capacitance  
C
V
iss  
GS  
85  
15  
85  
15  
85  
15  
f = 1 MHz  
pF  
V
= 0 V  
= –10 V  
DS  
Common-Source Reverse  
Transfer Capacitance  
C
rss  
V
GS  
J Series  
f = 1 MHz  
Equivalent Input  
Noise Voltage  
nV⁄  
√Hz  
V
= 5 V, I = 10 mA  
f = 1 kHz  
DG  
D
e
n
3.5  
Switching  
t
3
1
d(on)  
Turn-On Time  
t
r
V
= 1.5 V, V  
= 0 V  
DD  
GS(H)  
ns  
See Switching Diagram  
t
4
d(off)  
Turn-Off Time  
Notes  
t
18  
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
NIP  
b. Pulse test: PW v300 ms duty cycle v3%.  
Document Number: 70231  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-2  
J/SST108 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance and Drain Current  
vs. Gate-Source Cutoff Voltage  
On-Resistance vs. Drain Current  
20  
16  
12  
8
50  
40  
30  
20  
1000  
r
DS @ ID = 10 mA, VGS = 0 V  
DSS @ VDS = 15 V, VGS = 0 V  
T
A
= 25_C  
I
800  
600  
400  
200  
0
VGS(off) = –2 V  
rDS  
IDSS  
–4 V  
–8 V  
4
10  
0
0
0
–2  
–4  
–6  
–8  
–10  
1
10  
100  
VGS(off) – Gate-Source Cutoff Voltage (V)  
ID – Drain Current (mA)  
On-Resistance vs. Temperature  
Output Characteristics  
40  
100  
80  
I
r
= 10 mA  
changes X 0.7%/_C  
D
VGS(off) = –2 V  
DS  
32  
24  
16  
V
= –2 V  
GS(off)  
60  
VGS = 0 V  
–0.2 V  
40  
–4 V  
–8 V  
–0.4 V  
–0.6 V  
–0.8 V  
8
0
20  
0
–55 –35 –15  
5
25  
45  
65  
85 105 125  
0
2
4
6
8
10  
T
A
– Temperature (_C)  
VDS – Drain-Source Voltage (V)  
Turn-On Switching  
Turn-Off Switching  
5
4
30  
t
independent  
d(off)  
t approximately independent of ID  
r
VDD = 1.5 V, RG = 50 Ω  
of device V  
GS(off)  
VDD = 1.5 V, VGS(L) = –10 V  
V
= –10 V  
GS(L)  
24  
18  
12  
6
t
f
VGS off) = –2 V  
(
t
@ ID = 25 mA  
d(on)  
3
2
1
0
t
@ I = 10 mA  
D
d(on)  
VGS(off) = –8 V  
t
d(off)  
t
r
0
0
–2  
–4  
–6  
–8  
–10  
0
5
10  
15  
20  
25  
VGS(off) – Gate-Source Cutoff Voltage (V)  
ID – Drain Current (mA)  
Document Number: 70231  
www.vishay.com  
S-04028—Rev. E, 04-Jun-01  
7-3  
J/SST108 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Capacitance vs. Gate-Source Voltage  
Transconductance vs. Drain Current  
100  
100  
V
= –4 V  
GS(off)  
VDS = 0 V  
f = 1 MHz  
80  
T
A
= –55_C  
25_C  
60  
10  
125_C  
40  
20  
0
C
iss  
C
VDS = 5 V  
f = 1 kHz  
rss  
1
0
–4  
–8  
–12  
–16  
–20  
1
10  
100  
100 k  
100  
VGS – Gate-Source Voltage (V)  
I
– Drain Current (mA)  
D
Forward Transconductance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
Noise Voltage vs. Frequency  
200  
100  
50  
40  
30  
20  
10  
0
g
V
and g @ VDS = 5 V  
os  
GS = 0 V, f = 1 kHz  
VDS = 5 V  
fs  
160  
120  
g
fs  
10  
80  
40  
0
g
os  
ID = 10 mA  
40 mA  
1
0
–2  
–4  
–6  
–8  
–10  
10  
100  
1 k  
10 k  
V
GS(off) – Gate-Source Cutoff Voltage (V)  
f – Frequency (Hz)  
Gate Leakage Current  
Common Gate Input Admittance  
100 nA  
10 nA  
1 nA  
100  
10  
T
= 125_C  
A
g
ig  
5 mA  
I =10 mA  
D
1 mA  
IGSS @ 125_C  
= 25_C  
100 pA  
10 pA  
1 pA  
5 mA  
1
T
b
ig  
A
1 mA  
10 mA  
T
V
I
= 25_C  
A
DG = 20 V  
D = 20 mA  
I
@ 25_C  
GSS  
0.1  
0
4
8
12  
16  
20  
10  
20  
50  
f – Frequency (MHz)  
V
DG – Drain-Gate Voltage (V)  
Document Number: 70231  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-4  
J/SST108 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Common Gate Forward Admittance  
Common Gate Reverse Admittance  
100  
10  
10  
–g  
fg  
T
V
I
= 25_C  
A
DG = 20 V  
D = 20 mA  
1.0  
–g  
–b  
rg  
rg  
b
fg  
1
0.1  
T
V
= 25_C  
A
DG = 20 V  
ID = 20 mA  
0.1  
0.01  
10  
50  
100  
10  
20  
50  
100  
20  
f – Frequency (MHz)  
f – Frequency (MHz)  
Common Gate Output Admittance  
100  
T
V
= 25_C  
A
DG = 20 V  
ID = 20 mA  
10  
b
og  
g
og  
1
0.1  
10  
20  
f – Frequency (MHz)  
50  
100  
VDD  
SWITCHING TIME TEST CIRCUIT  
J/SST108  
J/SST109  
J/SST110  
RL  
VGS(L)  
–12 V  
150 W  
10 mA  
–7 V  
–5 V  
OUT  
R *  
L
150 W  
10 mA  
150 W  
10 mA  
VGS(H)  
I
D(on)  
*Non-inductive  
VGS(L)  
1 kΩ  
51 Ω  
51 Ω  
INPUT PULSE  
SAMPLING SCOPE  
VIN  
Scope  
Rise Time < 1 ns  
Fall Time < 1 ns  
Pulse Width 100 ns  
PRF 1 MHz  
Rise Time 0.4 ns  
Input Resistance 10 MW  
Input Capacitance 1.5 pF  
Document Number: 70231  
www.vishay.com  
S-04028—Rev. E, 04-Jun-01  
7-5  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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