J110L [VISHAY]
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN;型号: | J110L |
厂家: | VISHAY |
描述: | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN |
文件: | 总5页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
J/SST108 Series
Vishay Siliconix
N–Channel JFETs
J108
SST108
SST109
SST110
J109
J110
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
J/SST108
J/SST109
J/SST110
–3 to –10
–2 to –6
8
20
20
20
4
4
4
12
18
–0.5 to –4
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: J108 <8 W
D Fast Switching—tON: 4 ns
D Low Leakage: 20 pA
D Low Error Voltage
D Analog Switches
D Choppers
D High-Speed Analog Circuit Performance
D Negligible “Off-Error” Excellent Accuracy
D Good Frequency Response
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Low Capacitance: 11 pF
D Low Insertion Loss
D Eliminates Additional Buffering
DESCRIPTION
The J/SST108 series is designed with high-performance
analog switching applications in mind. It features low
on-resistance, good off-isolation, and fast switching.
The TO-226AA (TO-92) plastic package provides a
low-cost option. Both the J and SST series are available
in tape-and-reel for automated assembly (see Packaging
Information).
For similar products packaged in
TO-206AC (TO-52), see the 2N5432/5433/5434 data
sheet.
The SST108 series is comprised of surface-mount
devices featuring the lowest rDS(on) of any TO-236
(SOT-23) JFET device.
TO-226AA
(TO-92)
TO-236
(SOT-23)
D
S
1
2
1
2
3
D
S
3
G
G
Top View
SST108 (I8)*
SST109 (I9)*
SST110 (I0)*
Top View
*Marking Code for TO-236
J108, J109, J110
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SST108 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J/SST108
J/SST109
J/SST110
Parameter
Symbol
Test Conditions
Typa
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 mA , V = 0 V
–32
–25
–25
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 5 V, I = 1 mA
–3
–10
–3
–2
–6
–3
–0.5
–4
–3
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
80
40
10
mA
DSS
DS
GS
V
= –15 V, V = 0 V
–0.01
–5
GS
DS
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
I
GSS
T
A
= 125_C
I
G
–0.01
0.02
1.0
V
V
= 10 V, I = 10 mA
nA
DG
D
= 5 V, V = –10 V
3
8
3
3
DS
GS
I
D(off)
T
A
= 125_C
Drain-Source
On-Resistance
r
V
= 0 V, V v 0.1 V
12
W
18
DS(on)
GS
DS
Gate-Source
Forward Voltage
V
I
G
= 1 mA , V = 0 V
0.7
V
GS(F)
DS
Dynamic
Common-Source
Forward Transconductance
g
17
fs
V
= 5 V, I = 10 mA, f = 1 kHz
D
mS
DS
Common-Source
Output Conductance
g
os
0.6
Drain-Source
On-Resistance
r
V
= 0 V, I = 0 mA , f = 1 kHz
GS D
W
8
12
18
ds(on)
V
= 0 V
= 0 V
SST
J Series
SST
60
60
11
11
DS
Common-Source
Input Capacitance
C
V
iss
GS
85
15
85
15
85
15
f = 1 MHz
pF
V
= 0 V
= –10 V
DS
Common-Source Reverse
Transfer Capacitance
C
rss
V
GS
J Series
f = 1 MHz
Equivalent Input
Noise Voltage
nV⁄
√Hz
V
= 5 V, I = 10 mA
f = 1 kHz
DG
D
e
n
3.5
Switching
t
3
1
d(on)
Turn-On Time
t
r
V
= 1.5 V, V
= 0 V
DD
GS(H)
ns
See Switching Diagram
t
4
d(off)
Turn-Off Time
Notes
t
18
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NIP
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-2
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
20
16
12
8
50
40
30
20
1000
r
DS @ ID = 10 mA, VGS = 0 V
DSS @ VDS = 15 V, VGS = 0 V
T
A
= 25_C
I
800
600
400
200
0
VGS(off) = –2 V
rDS
IDSS
–4 V
–8 V
4
10
0
0
0
–2
–4
–6
–8
–10
1
10
100
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
On-Resistance vs. Temperature
Output Characteristics
40
100
80
I
r
= 10 mA
changes X 0.7%/_C
D
VGS(off) = –2 V
DS
32
24
16
V
= –2 V
GS(off)
60
VGS = 0 V
–0.2 V
40
–4 V
–8 V
–0.4 V
–0.6 V
–0.8 V
8
0
20
0
–55 –35 –15
5
25
45
65
85 105 125
0
2
4
6
8
10
T
A
– Temperature (_C)
VDS – Drain-Source Voltage (V)
Turn-On Switching
Turn-Off Switching
5
4
30
t
independent
d(off)
t approximately independent of ID
r
VDD = 1.5 V, RG = 50 Ω
of device V
GS(off)
VDD = 1.5 V, VGS(L) = –10 V
V
= –10 V
GS(L)
24
18
12
6
t
f
VGS off) = –2 V
(
t
@ ID = 25 mA
d(on)
3
2
1
0
t
@ I = 10 mA
D
d(on)
VGS(off) = –8 V
t
d(off)
t
r
0
0
–2
–4
–6
–8
–10
0
5
10
15
20
25
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
Document Number: 70231
www.vishay.com
S-04028—Rev. E, 04-Jun-01
7-3
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Capacitance vs. Gate-Source Voltage
Transconductance vs. Drain Current
100
100
V
= –4 V
GS(off)
VDS = 0 V
f = 1 MHz
80
T
A
= –55_C
25_C
60
10
125_C
40
20
0
C
iss
C
VDS = 5 V
f = 1 kHz
rss
1
0
–4
–8
–12
–16
–20
1
10
100
100 k
100
VGS – Gate-Source Voltage (V)
I
– Drain Current (mA)
D
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
Noise Voltage vs. Frequency
200
100
50
40
30
20
10
0
g
V
and g @ VDS = 5 V
os
GS = 0 V, f = 1 kHz
VDS = 5 V
fs
160
120
g
fs
10
80
40
0
g
os
ID = 10 mA
40 mA
1
0
–2
–4
–6
–8
–10
10
100
1 k
10 k
V
GS(off) – Gate-Source Cutoff Voltage (V)
f – Frequency (Hz)
Gate Leakage Current
Common Gate Input Admittance
100 nA
10 nA
1 nA
100
10
T
= 125_C
A
g
ig
5 mA
I =10 mA
D
1 mA
IGSS @ 125_C
= 25_C
100 pA
10 pA
1 pA
5 mA
1
T
b
ig
A
1 mA
10 mA
T
V
I
= 25_C
A
DG = 20 V
D = 20 mA
I
@ 25_C
GSS
0.1
0
4
8
12
16
20
10
20
50
f – Frequency (MHz)
V
DG – Drain-Gate Voltage (V)
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-4
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common Gate Forward Admittance
Common Gate Reverse Admittance
100
10
10
–g
fg
T
V
I
= 25_C
A
DG = 20 V
D = 20 mA
1.0
–g
–b
rg
rg
b
fg
1
0.1
T
V
= 25_C
A
DG = 20 V
ID = 20 mA
0.1
0.01
10
50
100
10
20
50
100
20
f – Frequency (MHz)
f – Frequency (MHz)
Common Gate Output Admittance
100
T
V
= 25_C
A
DG = 20 V
ID = 20 mA
10
b
og
g
og
1
0.1
10
20
f – Frequency (MHz)
50
100
VDD
SWITCHING TIME TEST CIRCUIT
J/SST108
J/SST109
J/SST110
RL
VGS(L)
–12 V
150 W
10 mA
–7 V
–5 V
OUT
R *
L
150 W
10 mA
150 W
10 mA
VGS(H)
I
D(on)
*Non-inductive
VGS(L)
1 kΩ
51 Ω
51 Ω
INPUT PULSE
SAMPLING SCOPE
VIN
Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Document Number: 70231
www.vishay.com
S-04028—Rev. E, 04-Jun-01
7-5
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