首页 |元器件品牌

J111LTR-E3 [VISHAY]

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN;
J111LTR-E3
型号： J111LTR-E3
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN

瞄准线 开关 晶体管
文件： 总5页 (文件大小：45K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
J/SST111 Series  
Vishay Siliconix  
N-Channel JFETs  
J111 SST111  
J112 SST112  
J113 SST113  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max (W)  
ID(off) Typ (pA)  
tON Typ (ns)  
–3 to –10  
–1 to –5  
v–3  
30  
50  
5
5
5
4
4
4
J/SST111  
J/SST112  
J/SST113  
100  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 111 < 30 W  
D Fast Switching—tON: 4 ns  
D Low Leakage: 5 pA  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error,” Excellent Accuracy  
D Good Frequency Response, Low Glitches  
D Eliminates Additional Buffering  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Capacitance: 3 pF  
D Low Insertion Loss  
DESCRIPTION  
The J/SST111 series consists of all-purpose analog switches  
designed to support a wide range of applications. The  
J/SST113 are useful in a high-gain amplifier mode.  
For similar products in TO-206AA(TO-18) packaging, see the  
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and  
2N5564/5565/5566 (duals) data sheets.  
The J series, TO-226AA (TO-92) plastic package, provides  
low cost, while the SST series, TO236 (SOT-23) package,  
provides surface-mount capability. Both the J and SST series  
are available in tape-and-reel for automated assembly (see  
Packaging Information).  
TO-226AA (TO-92)  
TO-236 (SOT-23)  
1
D
S
D
S
1
2
3
G
2
G
3
Top View  
SST111 (C1)*  
SST112 (C2)*  
SST113 (C3)*  
Top View  
J111  
J112  
J113  
*Marking Code for TO-236  
ABSOLUTE MAXIMUM RATINGS  
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V  
Power Dissipation  
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C  
16  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Notes  
a. Derate 2.8 mW/_C above 25_C  
For applications information see AN105.  
Document Number: 70232  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-1  
J/SST111 Series  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
J/SST112  
J/SST113  
J/SST111  
Parameter  
Symbol  
Test Conditions  
Typa Min Max Min Max Min Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= –1 mA , V = 0 V  
–55  
–35  
–35  
–35  
(BR)GSS  
DS  
V
Gate-Source Cutoff Voltage  
V
–10  
–1  
–1  
–5  
–1  
–3  
–1  
V
= 5 V, I = 1 mA  
–3  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= 15 V, V = 0 V  
20  
5
2
mA  
DSS  
DS  
GS  
V
= –15 V, V = 0 V  
–0.005  
–3  
GS  
DS  
Gate Reverse Current  
Gate Operating Current  
I
nA  
pA  
GSS  
T
A
= 125_C  
I
G
V
V
= 15 V, I = 10 mA  
–5  
DG  
D
= 5 V, V = –10 V  
0.005  
3
1
1
1
DS  
GS  
Drain Cutoff Current  
I
nA  
D(off)  
T
A
= 125_C  
Drain-Source On-Resistance  
Gate-Source Forward Voltage  
r
V
= 0 V, V = 0.1 V  
30  
50  
100  
W
DS(on)  
GS  
DS  
V
I
G
= 1 mA , V = 0 V  
0.7  
V
GS(F)  
DS  
Dynamic  
Common-Source Forward  
Transconductance  
g
6
mS  
mS  
W
fs  
V
= 20 V, I = 1 mA  
D
f = 1 kHz  
DS  
Common-Source  
Output Conductance  
g
os  
25  
V
= 0 V, I = 0 mA  
D
GS  
Drain-Source On-Resistance  
r
30  
12  
5
50  
12  
5
100  
12  
5
ds(on)  
f = 1 kHz  
Common-Source  
Input Capacitance  
C
iss  
7
3
3
V
= 0 V, V = -10 V  
DS  
GS  
pF  
f = 1 MHz  
Common-Source Reverse Transfer  
Capacitance  
C
rss  
Equivalent Input  
Noise Voltage  
V
= 10 V, I = 1 mA  
D
f = 1 kHz  
nV⁄  
√Hz  
DG  
e
n
Switching  
t
2
2
d(on)  
Turn-On Time  
t
r
V
= 10 V, V  
= 0 V  
DD  
GS(H)  
ns  
See Switching Circuit  
t
6
d(off)  
Turn-Off Time  
t
f
15  
Notes  
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
NCB  
b. Pulse test: PW v300 ms duty cycle v3%.  
Document Number: 70232  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-2  
J/SST111 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance and Drain Current  
vs. Gate-Source Cutoff Voltage  
On-Resistance vs. Drain Current  
100  
80  
100  
80  
200  
160  
r
DS @ ID = 1 mA, VGS = 0  
DSS @ VDS = 20 V, VGS = 0  
T
A
= 25° C  
I
IDSS  
VGS(off) = –2 V  
rDS  
60  
40  
120  
80  
60  
40  
–4 V  
–8 V  
20  
0
40  
0
20  
0
0
–2  
–4  
–6  
–8  
–10  
1
10  
100  
V
GS(off) – Gate-Source Cutoff Voltage (V)  
ID – Drain Current (mA)  
Turn-On Switching  
On-Resistance vs. Temperature  
5
4
200  
160  
t approximately independent of ID  
r
VDD = 5 V, RG = 50 Ω  
GS(L) = –10 V  
I
r
= 1 mA  
changes X 0.7%/_C  
D
DS  
V
t
r
120  
80  
40  
0
V
= –2 V  
3
2
1
0
GS(off)  
t
@
d(on)  
I
D = 12 mA  
–4 V  
–8 V  
t
@
d(on)  
I
D = 3 mA  
0
–10  
–55 –35 –15  
5
25 45  
65  
85 105 125  
–2  
–4  
–6  
–8  
T
A
– Temperature ( _C)  
VGS(off) – Gate-Source Cutoff Voltage (V)  
Turn-Off Switching  
Capacitance vs. Gate-Source Voltage  
30  
30  
t
independent of device VGS(off)  
d(off)  
f = 1 MHz  
VDD = 5 V, VGS(L) = –10 V  
24  
18  
12  
6
24  
18  
12  
6
t @  
f
V
= –2 V  
GS(off)  
t
d(off)  
C
iss  
@ VDS = 0 V  
t @  
f
GS(off) = –8 V  
C
rss  
@ VDS = 0 V  
V
0
0
0
2
4
6
8
10  
0
–4  
–8  
–12  
–16  
–20  
ID – Drain Current (mA)  
VGS – Gate-Source Voltage (V)  
Document Number: 70232  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-3  
J/SST111 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Forward Transconductance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
Noise Voltage vs. Frequency  
100  
10  
1
50  
500  
g
fs  
and g @ VDS = 20 V  
os  
VDS = 10 V  
V
GS = 0 V, f = 1 kHz  
40  
g
fs  
g
os  
30  
20  
10  
250  
ID = 1 mA  
ID = 10 mA  
0
0
0
–2  
–4  
–6  
–8  
–10  
10  
100  
1 k  
10 k  
100 k  
f – Frequency (Hz)  
VGS(off) – Gate-Source Cutoff Voltage (V)  
Gate Leakage Current  
Common-Gate Input Admittance  
10 nA  
1 nA  
100  
10  
IGSS @ 125_C  
VDG = 10 V  
D = 10 mA  
I
T
ID = 10 mA  
= 25_C  
g
ig  
A
T
A
= 125_C  
1 mA  
100 pA  
10 pA  
1 pA  
b
ig  
1 mA  
10 mA  
IGSS @ 25_C  
1
T
A
= 25_C  
0.1 pA  
0.1  
0
6
12  
18  
24  
30  
100  
200  
500  
1000  
VDG – Drain-Gate Voltage (V)  
f – Frequency (MHz)  
Common-Gate Forward Admittance  
Common-Gate Reverse Admittance  
100  
10  
VDG = 10 V  
D = 10 mA  
VDG = 10 V  
ID = 10 mA  
I
T
A
= 25_C  
T
A
= 25_C  
–g  
fg  
b
fg  
–b  
rg  
1.0  
10  
1
g
fg  
+g  
rg  
–g  
rg  
0.1  
0.01  
0.1  
100  
200  
500  
1000  
100  
200  
500  
1000  
f – Frequency (MHz)  
f – Frequency (MHz)  
Document Number: 70232  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-4  
J/SST111 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Common-Gate Output Admittance  
Output Characteristics  
100  
80  
100  
10  
V
I
T
A
= 10 V  
DG  
VGS(off) = –4 V  
D = 10 mA  
= 25_C  
b
og  
VGS = 0 V  
60  
40  
20  
0
–0.5  
–1.0  
g
og  
1
–1.5  
–2.0  
–2.5  
0.1  
100  
200  
500  
1000  
0
10  
2
4
6
8
f – Frequency (MHz)  
VDS – Drain-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
40  
32  
100  
80  
VGS(off) = –4 V  
VDS = 20 V  
VGS(off) = –4 V  
T
A
= –55_C  
VGS = 0 V  
24  
16  
8
–0.5  
–1.0  
60  
40  
20  
0
25_C  
–1.5  
–2.0  
–2.5  
–3.0  
125_C  
–1  
0
0
1.0  
0
–5  
0.2  
0.4  
0.6  
0.8  
–2  
–3  
–4  
V
DS – Drain-Source Voltage (V)  
V
GS – Gate-Source Voltage (V)  
VDD  
SWITCHING TIME TEST CIRCUIT  
J/SST111  
J/SST112  
J/SST113  
R
L
V
–12 V  
800 W  
12 mA  
–7 V  
1600 W  
6 mA  
–5 V  
3200 W  
3 mA  
GS(L)  
OUT  
R *  
L
VGS(H)  
VGS(L)  
I
D(on)  
*Non-inductive  
1 kW  
51 W  
51 W  
INPUT PULSE  
SAMPLING SCOPE  
VGS  
Scope  
Rise Time < 1 ns  
Fall Time < 1 ns  
Pulse Width 100 ns  
PRF 1 MHz  
Rise Time 0.4 ns  
Input Resistance 10 MW  
Input Capacitance 1.5 pF  
Document Number: 70232  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-5  

相关型号：

J111LTR1

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
VISHAY

J111R

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

J111R-STYLE-D

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

J111R-STYLE-E

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

J111R-STYLE-F

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

J111R-STYLE-G

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

J111R-STYLE-H

 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

J111RL

 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN
ONSEMI

J111RL

 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
MOTOROLA

J111RL1

 JFET Chopper Transistors N−Channel - Depletion
ONSEMI

J111RL1

 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
MOTOROLA

J111RL1G

 JFET Chopper Transistors N−Channel - Depletion
ONSEMI
©2020 ICPDF网 联系我们和版权申明