J174 [VISHAY]
P-Channel JFETs; P沟道JFET的
| 型号： | J174 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel JFETs |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174
J175
J176
J177
SST174
SST175
SST176
SST177
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W) ID(off) Typ (pA)
tON Typ (ns)
J/SST174
J/SST175
J/SST176
J/SST177
5 to 10
3 to 6
85
–10
–10
–10
–10
25
25
25
25
125
250
300
1 to 4
0.8 to 2.25
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: J174 <85 W
D Fast Switching—tON: 25 ns
D Low Leakage: –10 pA
D Low Error Voltage
D Analog Switches
D Choppers
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Low Capacitance: 5 pF
D Low Insertion Loss
D Eliminates Additional Buffering
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
2
D
G
S
D
S
1
2
3
G
3
Top View
Top View
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
J174
J175
J176
J177
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
1
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J/SST174
J/SST175
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= 1 mA , V = 0 V
45
30
5
30
3
(BR)GSS
G
DS
V
V
V
= –15 V, I = –10 nA
10
–135
1
6
–70
1
GS(off)
DS
D
b
Saturation Drain Current
I
V
= –15 V, V = 0 V
–20
–7
mA
DSS
DS
GS
V
= 20 V, V = 0 V
0.01
5
GS
DS
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
I
GSS
T
= 125_C
A
I
G
V
= –15 V, I = –1 mA
0.01
–0.01
–5
nA
DG
D
V
= –15 V, V = 10 V
–1
–1
DS
GS
I
D(off)
T
= 125_C
A
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, V = –0.1 V
85
125
W
DS(on)
GS
DS
V
I
= –1 mA , V = 0 V
–0.7
V
GS(F)
G
DS
Dynamic
Common-Source
Forward Transconductance
g
4.5
20
mS
fs
V
= –15 V, I = –1 mA
f = 1 kHz
DS
D
Common-Source
Output Conductance
g
os
mS
Drain-Source On-Resistance
r
V
V
= 0 V, I = 0 mA , f = 1 kHz
85
125
W
ds(on)
GS
D
Common-Source Input Capacitance
C
iss
= 0 V, V = 0 V, f = 1 MHz
20
5
DS
GS
pF
Common-Source
Reverse Transfer Capacitance
V
= 0 V, V = 10 V
GS
f = 1 MHz
DS
C
rss
V
= –10 V, I = –1 mA
nV⁄
√Hz
DG
D
Equivalent Input Noise Voltage
e
n
20
f = 1 kHz
Switching
t
10
d(on)
Turn-On Time
t
r
15
10
20
V
= 0 V, V
See Switching Circuit
= 10 V
GS(L)
GS(H)
ns
t
d(off)
Turn-Off Time
Notes
t
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-2
J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J/SST176
J/SST177
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= 1 mA , V = 0 V
45
30
1
30
0.8
(BR)GSS
G
DS
V
V
V
= –15 V, I = –10 nA
4
–35
1
2.25
–20
1
GS(off)
DS
D
b
Saturation Drain Current
I
V
= –15 V, V = 0 V
–2
–1.5
mA
DSS
DS
GS
V
= 20 V, V = 0 V
0.01
5
GS
DS
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
I
GSS
T
= 125_C
A
I
G
V
= –15 V, I = –1 mA
0.01
–0.01
–5
nA
DG
D
V
= –15 V, V = 10 V
–1
–1
DS
GS
I
D(off)
T
= 125_C
A
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, V = –0.1 V
250
300
W
DS(on)
GS
DS
V
I
= –1 mA , V = 0 V
–0.7
V
GS(F)
G
DS
Dynamic
Common-Source
Forward Transconductance
g
4.5
20
mS
fs
V
= –15 V, I = –1 mA
f = 1 kHz
DS
D
Common-Source Output Conductance
Drain-Source On-Resistance
g
os
mS
r
V
V
= 0 V, I = 0 mA , f = 1 kHz
250
300
W
ds(on)
GS
D
Common-Source Input Capacitance
C
iss
= 0 V, V = 0 V, f = 1 MHz
20
5
DS
GS
pF
Common-Source
Reverse Transfer Capacitance
V
= 0 V, V = 10 V
GS
DS
C
rss
f = 1 MHz
V
= –10 V, I = –1 mA
nV⁄
√Hz
DG
D
Equivalent Input Noise Voltage
e
n
20
f = 1 kHz
Switching
t
10
d(on)
Turn-On Time
t
r
15
10
20
V
= 0 V, V
See Switching Circuit
= 10 V
GS(L)
GS(H)
ns
t
d(off)
Turn-Off Time
Notes
t
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-3
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
–100
18
250
g
fs
and g @ VDS = –15 V
os
IDSS
VGS = 0 V, f = 1 kHz
160
120
80
–80
–60
–40
15
12
9
200
150
100
50
g
fs
rDS
g
os
40
0
–20
6
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, V = 0 V
GS
0
3
0
0
2
4
6
8
10
0
2
4
6
8
10
V
– Gate-Source Cutoff Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)
GS(off)
Output Characteristics
On-Resistance vs. Drain Current
250
200
150
100
–25
VGS(off) = 3 V
T
A
= 25_C
VGS = 0 V
–20
–15
–10
VGS(off) = 1.5 V
0.5 V
1.0 V
3 V
5 V
1.5 V
2.0 V
50
0
–5
0
0
–4
–8
–12
–16
–20
–1
–10
ID – Drain Current (mA)
–100
VDS – Drain-Source Voltage (V)
Output Characteristics
On-Resistance vs. Temperature
–2
300
240
ID = –1 mA
DS changes X 0.7%/_C
VGS = 0 V
r
1.5 V
0.5 V
1.0 V
–1.6
180
120
–1.2
–0.8
VGS(off) = 1.5 V
2.0 V
3 V
5 V
60
0
–0.4
V
= 3 V
GS(off)
0
0
–0.1
–0.2
–0.3
–0.4
–0.5
–55 –35 –15
5
25
45
65
85 105 125
VDS – Drain-Source Voltage (V)
T
A
– Temperature (_C)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-4
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Turn-On Switching
Turn-Off Switching
20
50
t approximately independent of I
r
D
VDD = –10 V, R = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
G
t VGS(off) = 1.5 V
f
40
30
16
12
5 V
t
@ ID = –5 mA
t
@ ID = –10 mA
ON
ON
t
VGS(off) = 1.5 V
d(off)
8
4
0
20
5 V
10
0
t @ ID = –5 mA
r
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
0
1
2
3
4
5
0
–3
–6
–9
–12
–15
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
Capacitance vs. Gate-Source Voltage
Gate Leakage Current
100 nA
10 nA
30
24
18
VDS = 0 V
f = 1 MHz
ID = –1 mA
–10 mA
T
= 125_C
A
1 nA
IGSS @ 125_C
100 pA
C
C
iss
–10 mA
12
6
10 pA
1 pA
rss
T
A
= 25_C
IGSS @ 25_C
–1 mA
0.1 pA
0
0
4
8
12
16
20
0
–10
–20
–30
–40
–50
VGS – Gate-Source Voltage (V)
VDG – Drain-Gate Voltage (V)
Transfer Characteristics
Noise Voltage vs. Frequency
–40
100
10
1
V
= 3 V
V
= –15 V
DS
GS(off)
I
D
= –0.1 mA
–32
–24
–1 mA
T
A
= –55_C
25_C
–16
–8
0
V
= –10 V
DS
125_C
0
1
2
3
4
5
10
100
1 k
f – Frequency (Hz)
10 k
100 k
V
– Gate-Source Voltage (V)
GS
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-5
J/SST174/175/176/177 Series
Vishay Siliconix
VGG
VDD
SWITCHING TIME TEST CIRCUIT
174
175
176
177
RL
1.2 kW
VDD
VGG
–10 V
20 V
–6 V
12 V
–6 V
8 V
–6 V
5 V
VGS(H)
R *
560 W
100 W
–15 mA
750 W
220 W
–7 mA
1800 W
390 W
–3 mA
5600 W
390 W
–1 mA
L
VGS(L)
0.1 mF
RG
1.2 kW
51 W
R *
G
I
D(on)
7.5 kW
*Non-inductive
INPUT PULSE
SAMPLING SCOPE
51 W
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Sampling
Scope
51 W
See Typical Characteristics curves for changes.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-6
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