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J270-TR1 [VISHAY]

Small Signal Field-Effect Transistor, P-Channel, Junction FET;
J270-TR1
型号： J270-TR1
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, P-Channel, Junction FET
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J/SST270 Series  
Vishay Siliconix  
P-Channel JFETs  
J270  
J271  
SST270  
SST271  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)  
J/SST270  
J/SST271  
0.5 to 2.0  
1.5 to 4.5  
30  
30  
6
8
–2  
–6  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low Cutoff Voltage: J270 <2 V D Full Performance from Low-Voltage Power  
D High-Gain, Low-Noise Amplifiers  
Supply: Down to 2 V  
D High Input Impedance  
D Low-Current, Low-Voltage Battery  
D Low Signal Loss/System Error  
Amplifiers  
D Very Low Noise  
D High Gain  
D High System Sensitivity  
D Ultrahigh Input Impedance Pre-Amplifiers  
D High-Quality, Low-Level Signal Amplification D High-Side Switching  
DESCRIPTION  
The J/SST270 series consists of all-purpose amplifiers for  
designs requiring p-channel operation.  
provides surface-mount capability. Both the J and SST series  
are available in tape-and-reel for automated assembly (see  
Packaging Information).  
The TO-226AA (TO-92) plastic package provides a low-cost  
option, while the TO-236 (SOT-23) package  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
1
2
3
D
G
S
D
S
1
2
3
G
Top View  
Top View  
SST270 (S0)*  
SST271 (S1)*  
J270  
J271  
*Marking Code for TO-236  
ABSOLUTE MAXIMUM RATINGS  
1
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Notes  
a. Derate 2.8 mW/_C above 25_C  
Document Number: 70258  
S-04233—Rev. D, 02-Jul-01  
www.vishay.com  
8-1  
J/SST270 Series  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
J/SST270  
J/SST271  
Parameter  
Symbol  
Test Conditions  
Typa Min Max Min Max Unit  
Static  
Gate-Source Breakdown Voltage  
Gate-Source Cutoff Voltage  
V
I
= 1 mA , V = 0 V  
45  
30  
0.5  
–2  
30  
1.5  
–6  
(BR)GSS  
G
DS  
V
V
V
= –15 V, I = –1 nA  
2.0  
–15  
200  
4.5  
–50  
200  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= –15 V, V = 0 V  
mA  
pA  
nA  
DSS  
DS  
GS  
V
= 20 V, V = 0 V  
10  
5
GS  
DS  
Gate Reverse Current  
I
GSS  
T
A
= 125_C  
Gate Operating Current  
Drain Cutoff Current  
I
V
= –15 V, I = –1 mA  
10  
G
DG  
D
pA  
V
I
V
= –15 V, V = 10 V  
–10  
–0.7  
D(off)  
DS  
GS  
Gate-Source Forward Voltage  
V
I = –1 mA , V = 0 V  
G DS  
GS(F)  
Dynamic  
Common-Source Forward Transconductance  
Common-Source Output Conductance  
Common-Source Input Capacitance  
g
6
15  
8
18  
mS  
fs  
V
V
= –15 V, V = 0 V  
f = 1 kHz  
DS  
GS  
g
200  
500  
mS  
os  
iss  
C
20  
4
= –15 V, V = 0 V  
DS  
GS  
pF  
Common-Source  
Reverse Transfer Capacitance  
f = 1 MHz  
C
rss  
V
= –10 V, V = 0 V  
f = 1 kHz  
nV⁄  
√Hz  
DG  
GS  
Equivalent Input Noise Voltage  
e
n
20  
Notes  
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
PSCIA  
b. Pulse test: PW v300 ms duty cycle v3%.  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance and Drain Current  
vs. Gate-Source Cutoff Voltage  
Forward Transconductance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
200  
–100  
18  
250  
IDSS  
160  
120  
–80  
–60  
15  
12  
9
200  
150  
100  
50  
g
fs  
rDS  
g
os  
80  
40  
0
–40  
–20  
0
6
rDS @ ID = –1 mA, VGS = 0 V  
IDSS @ VDS = –15 V, VGS = 0 V  
g and g @ VDS = –15 V  
fs os  
VGS = 0 V, f = 1 kHz  
3
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
– Gate-Source Cutoff Voltage (V)  
V
– Gate-Source Cutoff Voltage (V)  
GS(off)  
GS(off)  
Document Number: 70258  
S-04233—Rev. D, 02-Jul-01  
www.vishay.com  
8-2  
J/SST270 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Output Characteristics  
Output Characteristics  
–2  
–2  
VGS = 0 V  
0.2 V  
1.0 V  
VGS = 0 V  
0.5 V  
0.4 V  
1.5 V  
–1.6  
–1.2  
–0.8  
–1.6  
–1.2  
–0.8  
0.6 V  
2.0 V  
0.8 V  
–0.4  
–0.4  
V
= 1.5 V  
VGS(off) = 3 V  
GS(off)  
0
0
0
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
0
0
0
–0.2  
–0.4  
–0.6  
–0.8  
–1  
–20  
1.0  
VDS – Drain-Source Voltage (V)  
VDS – Drain-Source Voltage (V)  
Output Characteristics  
–25  
Capacitance vs. Gate-Source Voltage  
30  
24  
18  
VGS(off) = 3 V  
VDS = 0 V  
f = 1 MHz  
VGS = 0 V  
–20  
–15  
–10  
0.5 V  
1.0 V  
C
iss  
12  
6
C
4
rss  
1.5 V  
2.0 V  
–5  
0
0
–4  
–8  
–12  
–16  
0
8
12  
16  
20  
VDS – Drain-Source Voltage (V)  
VGS – Gate-Source Voltage (V)  
Transfer Characteristics  
Transfer Characteristics  
–10  
–8  
–40  
–32  
VGS(off) = 1.5 V  
VDS = –15 V  
VGS(off) = 3 V  
VDS = –15 V  
T
A
= –55_C  
T
A
= –55_C  
–6  
–4  
–2  
0
–24  
–16  
–8  
25_C  
25_C  
125_C  
125_C  
0
0.2  
0.4  
0.6  
0.8  
0
1
2
3
4
5
V
GS – Gate-Source Voltage (V)  
VGS – Gate-Source Voltage (V)  
Document Number: 70258  
S-04233—Rev. D, 02-Jul-01  
www.vishay.com  
8-3  
J/SST270 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Transconductance vs. Drain Current  
Output Conductance vs. Drain Current  
100  
100  
VGS(off) = 3 V  
VGS(off) = 3 V  
VDS = –15 V  
f = kHz  
T
A
= –55_C  
125_C  
T
A
= –55_C  
10  
10  
25_C  
25_C  
125_C  
V
= –15 V  
DS  
f = kHz  
1
1
–0.1  
–1  
ID – Drain Current (mA)  
–10  
–0.1  
–1  
ID – Drain Current (mA)  
–10  
On-Resistance vs. Temperature  
300  
240  
On-Resistance vs. Drain Current  
250  
200  
150  
100  
ID = –1 mA  
DS changes X 0.7%/_C  
r
T
= 25_C  
A
VGS(off) = 1.5 V  
180  
120  
VGS(off) = 1.5 V  
3 V  
3 V  
5 V  
5 V  
60  
0
50  
0
–55 –35 –15  
5
25 45  
65  
85 105 125  
–1  
–10  
ID – Drain Current (mA)  
–100  
T
A
– Temperature (_C)  
Gate Leakage Current  
Noise Voltage vs. Frequency  
100 nA  
100  
10  
1
10 nA  
1 nA  
I
D
= –10 mA  
–1 mA  
ID = –0.1 mA  
T
= 125_C  
A
IGSS @ 125_C  
–1 mA  
100 pA  
–10 mA  
10 pA  
1 pA  
T
A
= 25_C  
I
@ 25_C  
GSS  
–1 mA  
VDS = –10 V  
0.1 pA  
10  
100  
1 k  
10 k  
100 k  
0
–10  
–20  
–30  
–40  
–50  
VDG – Drain-Gate Voltage (V)  
f – Frequency (Hz)  
Document Number: 70258  
S-04233—Rev. D, 02-Jul-01  
www.vishay.com  
8-4  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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