J309-TA-E3 [VISHAY]

Transistor;
J309-TA-E3
型号: J309-TA-E3
厂家: VISHAY    VISHAY
描述:

Transistor

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中文:  中文翻译
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J/SST/U308 Series  
Vishay Siliconix  
N-Channel JFETs  
J308  
SST308  
SST309  
SST310  
U309  
U310  
J309  
J310  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
V(BR)GSS Min (V)  
gfs Min (mS)  
IDSS Min (mA)  
J308  
J309  
1 to 6.5  
1 to 4  
25  
25  
25  
25  
25  
25  
25  
25  
8
10  
8
12  
12  
24  
12  
12  
24  
12  
24  
J310  
2 to 6.5  
1 to 6.5  
1 to 4  
SST308  
SST309  
SST310  
U309  
8
10  
8
2 to 6.5  
1 to 4  
10  
10  
U310  
2.5 to 6  
FEATURES  
BENEFITS  
APPLICATIONS  
D Excellent High Frequency Gain:  
D Wideband High Gain  
D High-Frequency Amplifier/Mixer  
D Oscillator  
Gps 11.5 dB @ 450 MHz  
D Very High System Sensitivity  
D High Quality of Amplification  
D High-Speed Switching Capability  
D High Low-Level Signal Amplification  
D Very Low Noise: 2.7 dB @ 450 MHz  
D Sample-and-Hold  
D Very Low Distortion  
D Very Low Capacitance Switches  
D High ac/dc Switch Off-Isolation  
DESCRIPTION  
The J/SST/U308 series offers superb amplification characteristics.  
Of special interest is its high-frequency performance. Even at 450  
MHz, this series offers high power gain at low noise.  
and is available with tape-and-reel options. The U series  
hermetically-sealed TO-206AC (TO-52) package supports full  
military processing. (See Military and Packaging Information for  
further details.)  
Low-cost J series TO-226AA (TO-92) packaging supports  
automated assembly with tape-and-reel options. The SST series  
TO-236 (SOT-23) package provides surface-mount capabilities  
For similar dual products packaged in the TO-78, see the  
U430/431 data sheet.  
TO-206AC  
(TO-52)  
TO-226AA  
TO-236  
(TO-92)  
(SOT-23)  
1
S
D
D
S
1
2
1
3
G
S
2
3
G
2
3
Top View  
SST308 (Z8)*  
SST309 (Z9)*  
SST310 (Z0)*  
D
G and Case  
Top View  
J308  
Top View  
U309  
U310  
J309  
*Marking Code for TO-236  
J310  
For applications information see AN104.  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
1
J/SST/U308 Series  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C  
Gate Current :  
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA  
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA  
a
Power Dissipation :  
(J/SST Prefixes) . . . . . . . . . . . . . . . . . 350 mW  
b
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . 500 mW  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
Notes  
Storage Temperature :  
(J/SST Prefixes) . . . . . . . . . . . . . . 55 to 150_C  
(U Prefix) . . . . . . . . . . . . . . . . . . . . 65 to 175_C  
a. Derate 2.8 mW/_C above 25_C  
b. Derate 4 mW/_C above 25_C  
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (T = 25_C UNLESS NOTED)  
A
Limits  
J/SST308  
J/SST309  
J/SST310  
Parameter  
Symbol  
Test Conditions  
Typa  
Min Max Min Max Min Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= 1 mA , V = 0 V  
35  
25  
25  
25  
V
(BR)GSS  
DS  
Gate-Source Cutoff Voltage  
V
6.5  
60  
4  
30  
1  
1  
2  
6.5  
60  
V
mA  
nA  
mA  
pA  
W
V
= 10 V, I = 1 nA  
1  
1  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
12  
V
= 10 V, V = 0 V  
GS  
12  
24  
DSS  
DS  
V
= 15 V, V = 0 V  
0.002  
0.001  
15  
1  
1  
GS  
DS  
Gate Reverse Current  
I
GSS  
1  
1  
T
A
= 125_C  
Gate Operating Current  
I
G
V
= 9 V, I = 10 mA  
D
DG  
Drain-Source On-Resistance  
r
V
= 0 V, I = 1 mA  
35  
DS(on)  
GS  
D
I
G
V
= 10 mA  
DS  
Gate-Source Forward Voltage  
V
J
0.7  
1
1
1
V
GS(F)  
= 0 V  
Dynamic  
Common-Source  
g
14  
mS  
8
10  
8
fs  
Forward Transconductance  
V
= 10 V, I = 10 mA  
D
DS  
f = 1 kHz  
Common-Source  
Output Conductance  
g
os  
110  
mS  
250  
5
250  
5
250  
5
J
4
Common-Source  
Input Capacitance  
C
iss  
SST  
J
4
V
V
= 10 V  
DS  
GS  
pF  
= 10 V  
1.9  
1.9  
2.5  
2.5  
2.5  
Common-Source  
Reverse Transfer Capacitance  
f = 1 MHz  
C
rss  
SST  
Equivalent Input  
Noise Voltage  
nV⁄  
Hz  
V
= 10 V, I = 10 mA  
DS  
D
e
n
6
f = 100 Hz  
High Frequency  
f = 105 MHz  
14  
13  
Common-Gate  
g
fg  
Forward Transconductance  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
mS  
dB  
0.16  
0.55  
16  
Common-Gate  
Output Conductance  
g
og  
V
I
= 10 V  
= 10 mA  
DS  
D
c
Common-Gate Power Gain  
G
pg  
11.5  
1.5  
Noise Figure  
Notes  
NF  
2.7  
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
NZB  
b. Pulse test: PW v300 ms duty cycle v3%.  
c. Gain (G ) measured at optimum input noise match.  
pg  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
2
J/SST/U308 Series  
Vishay Siliconix  
SPECIFICATIONS FOR U309 AND U310 (T = 25_C UNLESS NOTED)  
A
Limits  
U309  
U310  
Parameter  
Symbol  
Test Conditions  
Typa  
Min Max Min Max Unit  
Static  
Gate-Source Breakdown Voltage  
Gate-Source Cutoff Voltage  
V
I
= 1 mA , V = 0 V  
35  
25  
1  
25  
2.5  
24  
V
V
(BR)GSS  
G
DS  
V
4  
30  
6  
60  
V
= 10 V, I = 1 nA  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
mA  
nA  
V
= 10 V, V = 0 V  
GS  
12  
DSS  
DS  
V
= 15 V, V = 0 V  
0.002  
0.001  
15  
0.15  
0.15  
0.15  
0.15  
GS  
DS  
Gate Reverse Current  
I
GSS  
mA  
pA  
W
T
A
= 125_C  
Gate Operating Current  
I
G
V
= 9 V, I = 10 mA  
D
DG  
Drain-Source On-Resistance  
Gate-Source Forward Voltage  
r
V
= 0 V, I = 1 mA  
35  
DS(on)  
GS  
D
V
I
G
= 10 mA , V = 0 V  
0.7  
V
1
1
GS(F)  
DS  
Dynamic  
Common-Source  
g
14  
110  
4
mS  
10  
10  
fs  
Forward Transconductance  
V
= 10 V, I = 10 mA  
D
DS  
f = 1 kHz  
Common-Source  
Output Conductance  
g
os  
mS  
250  
5
250  
5
Common-Source  
Input Capacitance  
C
iss  
V
= 10 V, V = 10 V  
DS  
GS  
pF  
f = 1 MHz  
Common-Source  
Reverse Transfer Capacitance  
C
rss  
1.9  
6
2.5  
2.5  
nV⁄  
Hz  
V
= 10 V, I = 10 mA  
D
f = 100 Hz  
DS  
Equivalent Input Noise Voltage  
e
n
High Frequency  
f = 105 MHz  
14  
13  
Common-Gate  
g
fg  
Forward Transconductance  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
f = 105 MHz  
f = 450 MHz  
mS  
dB  
0.16  
0.55  
16  
Common-Gate  
Output Conductance  
g
og  
V
I
= 10 V  
= 10 mA  
DS  
D
14  
10  
14  
10  
c, d  
Common-Gate Power Gain  
G
pg  
11.5  
1.5  
2
2
d
Noise Figure  
NF  
2.7  
3.5  
3.5  
Notes  
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
NZB  
b. Pulse test: PW v300 ms duty cycle v3%.  
c. Gain (G ) measured at optimum input noise match.  
pg  
d. Not a production test.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
3
J/SST/U308 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Drain Current and Transconductance  
Gate Leakage Current  
vs. Gate-Source Cutoff Voltage  
100  
50  
10 nA  
1 nA  
IDSS @ VDS = 10 V, VGS = 0 V  
@
IG ID = 10 mA  
200 mA  
g
@ VDS = 10 V, VGS = 0 V  
fs  
f = 1 kHz  
T
A
= 125_C  
80  
60  
40  
30  
IGSS @ 125_C  
100 pA  
10 pA  
200 mA  
g
fs  
40  
20  
IDSS  
10 mA  
T
A
= 25_C  
20  
0
10  
0
1 pA  
IGSS @ 25_C  
0.1 pA  
0
3
6
9
12  
15  
0
1  
2  
3  
4  
5  
V
GS(off) Gate-Source Cutoff Voltage (V)  
VDG Drain-Gate Voltage (V)  
On-Resistance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
Common-Source Forward Transconductance  
vs. Drain Current  
100  
300  
20  
16  
12  
VGS(off) = 3 V  
VDS = 10 V  
f = 1 kHz  
80  
60  
40  
240  
180  
120  
60  
T
A
= 55_C  
rDS  
g
os  
25_C  
8
4
125_C  
20  
0
r
@ I = 1 mA, V = 0 V  
D GS  
@ V = 10 V, V = 0 V, f = 1 kHz  
DS GS  
DS  
os  
g
0
0
0
1  
2  
3  
4  
5  
0.1  
1
10  
V
Gate-Source Cutoff Voltage (V)  
ID Drain Current (mA)  
GS(off)  
Output Characteristics  
Output Characteristics  
15  
30  
VGS(off) = 3 V  
VGS(off) = 1.5 V  
V
= 0 V  
GS  
V
= 0 V  
GS  
12  
9
24  
18  
12  
6
0.2 V  
0.4 V  
0.4 V  
0.8 V  
1.2 V  
1.6 V  
6
0.6 V  
0.8 V  
3
2.0 V  
2.4 V  
1.0 V  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
0.8  
1
V
Drain-Source Voltage (V)  
V
DS Drain-Source Voltage (V)  
DS  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
4
J/SST/U308 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Output Characteristics  
Output Characteristics  
20  
50  
VGS(off) = 1.5 V  
VGS(off) = 3 V  
V
= 0 V  
GS  
V
= 0 V  
GS  
16  
12  
8
40  
30  
20  
10  
0
0.2 V  
0.4 V  
0.8 V  
1.2 V  
0.4 V  
0.6 V  
1.6 V  
2.0 V  
2.4 V  
0.8 V  
1.0 V  
4
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
DS Drain-Source Voltage (V)  
V
DS Drain-Source Voltage (V)  
Transfer Characteristics  
Transfer Characteristics  
30  
100  
VGS(off) = 1.5 V  
V
= 10 V  
VGS(off) = 3 V  
VDS = 10 V  
DS  
24  
18  
80  
60  
T
A
= 55_C  
T
A
= 55_C  
25_C  
25_C  
12  
6
40  
20  
0
125_C  
125_C  
0
0
0.4  
0.8  
1.2  
1.6  
2  
0
0.6  
1.2  
1.8  
2.4  
3  
V
GS Gate-Source Voltage (V)  
VGS Gate-Source Voltage (V)  
Transconductance vs. Gate-Source Voltage  
Transconductance vs. Gate-Source Voltage  
30  
24  
50  
40  
VGS(off) = 1.5 V  
VDS = 10 V  
f = 1 kHz  
VGS(off) = 3 V  
VDS = 10 V  
f = 1 kHz  
T
A
= 55_C  
T
A
= 55_C  
25_C  
18  
12  
6
30  
20  
10  
0
125_C  
25_C  
125_C  
0
0
0.4  
0.8  
1.2  
1.6  
2  
0
0.6  
1.2  
1.8  
2.4  
3  
V
GS Gate-Source Voltage (V)  
VGS Gate-Source Voltage (V)  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
5
J/SST/U308 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance vs. Drain Current  
Circuit Voltage Gain vs. Drain Current  
100  
100  
g
R
L
fs  
A
+
V
1 ) R g  
os  
L
80  
60  
80  
60  
Assume VDD = 15 V, VDS = 5 V  
VGS(off) = 1.5 V  
VGS(off) = 3 V  
10  
10 V  
R
+
L
I
D
VGS(off) = 1.5 V  
40  
40  
20  
0
20  
0
VGS(off) = 3 V  
1
100  
0.1  
1
10  
ID Drain Current (mA)  
ID Drain Current (mA)  
Common-Source Input Capacitance  
vs. Gate-Source Voltage  
Common-Source Reverse Feedback Capacitance  
vs. Gate-Source Voltage  
15  
12  
9
10  
f = 1 MHz  
f = 1 MHz  
8
6
4
2
0
VDS = 0 V  
VDS = 0 V  
6
VDS = 5 V  
3
VDS = 5 V  
0
0
4  
8  
12  
16  
20  
0
4  
8  
12  
16  
20  
V
GS Gate-Source Voltage (V)  
VGS Gate-Source Voltage (V)  
Input Admittance vs. Frequency  
Forward Admittance vs. Frequency  
100  
10  
100  
10  
g
g  
fg  
ig  
b
ig  
b
fg  
1
1
T
V
= 25_C  
D = 10 mA  
T
= 25_C  
A
A
DG = 10 V  
V
DG = 10 V  
I
ID = 10 mA  
CommonGate  
CommonGate  
0.1  
0.1  
200  
500  
100  
200  
500  
1000  
100  
1000  
f Frequency (MHz)  
f Frequency (MHz)  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
6
J/SST/U308 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Reverse Admittance vs. Frequency  
Output Admittance vs. Frequency  
10  
100  
T
= 25_C  
T
V
= 25_C  
D = 10 mA  
A
A
VDG = 10 V  
DG = 10 V  
I
D = 10 mA  
I
CommonGate  
CommonGate  
1
10  
b
og  
b  
rg  
+g  
rg  
g
og  
g  
rg  
0.1  
1
0.01  
0.1  
100  
200  
500  
1000  
100  
200  
500  
1000  
f Frequency (MHz)  
f Frequency (MHz)  
Equivalent Input Noise Voltage vs. Frequency  
Output Conductance vs. Drain Current  
20  
150  
120  
VDS = 10 V  
VGS(off) = 3 V  
VDS = 10 V  
f = 1 kHz  
16  
12  
8
90  
60  
T
A
= 55_C  
ID = 1 mA  
25_C  
30  
0
ID = 10 mA  
4
0
125_C  
10  
100  
1 k  
10 k  
100 k  
0.1  
1
10  
f Frequency (Hz)  
ID Drain Current (mA)  
Document Number: 70237  
S-50149—Rev. H, 24-Jan-05  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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