J309-TA-E3 [VISHAY]
Transistor;
VISHAY 
J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
J308
SST308
SST309
SST310
U309
U310
J309
J310
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
J308
J309
−1 to −6.5
−1 to −4
−25
−25
−25
−25
−25
−25
−25
−25
8
10
8
12
12
24
12
12
24
12
24
J310
−2 to −6.5
−1 to −6.5
−1 to −4
SST308
SST309
SST310
U309
8
10
8
−2 to −6.5
−1 to −4
10
10
U310
−2.5 to −6
FEATURES
BENEFITS
APPLICATIONS
D Excellent High Frequency Gain:
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
Gps 11.5 dB @ 450 MHz
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D Very Low Noise: 2.7 dB @ 450 MHz
D Sample-and-Hold
D Very Low Distortion
D Very Low Capacitance Switches
D High ac/dc Switch Off-Isolation
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
TO-206AC
(TO-52)
TO-226AA
TO-236
(TO-92)
(SOT-23)
1
S
D
D
S
1
2
1
3
G
S
2
3
G
2
3
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
D
G and Case
Top View
J308
Top View
U309
U310
J309
*Marking Code for TO-236
J310
For applications information see AN104.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
1
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
a
Power Dissipation :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . 350 mW
b
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . 500 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . −55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . −65 to 175_C
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (T = 25_C UNLESS NOTED)
A
Limits
J/SST308
J/SST309
J/SST310
Parameter
Symbol
Test Conditions
Typa
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 mA , V = 0 V
−35
−25
−25
−25
V
(BR)GSS
DS
Gate-Source Cutoff Voltage
V
−6.5
60
−4
30
−1
−1
−2
−6.5
60
V
mA
nA
mA
pA
W
V
= 10 V, I = 1 nA
−1
−1
GS(off)
DS
D
b
Saturation Drain Current
I
12
V
= 10 V, V = 0 V
GS
12
24
DSS
DS
V
= −15 V, V = 0 V
−0.002
−0.001
−15
−1
−1
GS
DS
Gate Reverse Current
I
GSS
−1
−1
T
A
= 125_C
Gate Operating Current
I
G
V
= 9 V, I = 10 mA
D
DG
Drain-Source On-Resistance
r
V
= 0 V, I = 1 mA
35
DS(on)
GS
D
I
G
V
= 10 mA
DS
Gate-Source Forward Voltage
V
J
0.7
1
1
1
V
GS(F)
= 0 V
Dynamic
Common-Source
g
14
mS
8
10
8
fs
Forward Transconductance
V
= 10 V, I = 10 mA
D
DS
f = 1 kHz
Common-Source
Output Conductance
g
os
110
mS
250
5
250
5
250
5
J
4
Common-Source
Input Capacitance
C
iss
SST
J
4
V
V
= 10 V
DS
GS
pF
= −10 V
1.9
1.9
2.5
2.5
2.5
Common-Source
Reverse Transfer Capacitance
f = 1 MHz
C
rss
SST
Equivalent Input
Noise Voltage
nV⁄
√Hz
V
= 10 V, I = 10 mA
DS
D
e
n
6
f = 100 Hz
High Frequency
f = 105 MHz
14
13
Common-Gate
g
fg
Forward Transconductance
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
mS
dB
0.16
0.55
16
Common-Gate
Output Conductance
g
og
V
I
= 10 V
= 10 mA
DS
D
c
Common-Gate Power Gain
G
pg
11.5
1.5
Noise Figure
Notes
NF
2.7
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (G ) measured at optimum input noise match.
pg
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
2
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (T = 25_C UNLESS NOTED)
A
Limits
U309
U310
Parameter
Symbol
Test Conditions
Typa
Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= −1 mA , V = 0 V
−35
−25
−1
−25
−2.5
24
V
V
(BR)GSS
G
DS
V
−4
30
−6
60
V
= 10 V, I = 1 nA
GS(off)
DS
D
b
Saturation Drain Current
I
mA
nA
V
= 10 V, V = 0 V
GS
12
DSS
DS
V
= −15 V, V = 0 V
−0.002
−0.001
−15
−0.15
−0.15
−0.15
−0.15
GS
DS
Gate Reverse Current
I
GSS
mA
pA
W
T
A
= 125_C
Gate Operating Current
I
G
V
= 9 V, I = 10 mA
D
DG
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, I = 1 mA
35
DS(on)
GS
D
V
I
G
= 10 mA , V = 0 V
0.7
V
1
1
GS(F)
DS
Dynamic
Common-Source
g
14
110
4
mS
10
10
fs
Forward Transconductance
V
= 10 V, I = 10 mA
D
DS
f = 1 kHz
Common-Source
Output Conductance
g
os
mS
250
5
250
5
Common-Source
Input Capacitance
C
iss
V
= 10 V, V = −10 V
DS
GS
pF
f = 1 MHz
Common-Source
Reverse Transfer Capacitance
C
rss
1.9
6
2.5
2.5
nV⁄
√Hz
V
= 10 V, I = 10 mA
D
f = 100 Hz
DS
Equivalent Input Noise Voltage
e
n
High Frequency
f = 105 MHz
14
13
Common-Gate
g
fg
Forward Transconductance
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
mS
dB
0.16
0.55
16
Common-Gate
Output Conductance
g
og
V
I
= 10 V
= 10 mA
DS
D
14
10
14
10
c, d
Common-Gate Power Gain
G
pg
11.5
1.5
2
2
d
Noise Figure
NF
2.7
3.5
3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (G ) measured at optimum input noise match.
pg
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
3
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
Gate Leakage Current
vs. Gate-Source Cutoff Voltage
100
50
10 nA
1 nA
IDSS @ VDS = 10 V, VGS = 0 V
@
IG ID = 10 mA
200 mA
g
@ VDS = 10 V, VGS = 0 V
fs
f = 1 kHz
T
A
= 125_C
80
60
40
30
IGSS @ 125_C
100 pA
10 pA
200 mA
g
fs
40
20
IDSS
10 mA
T
A
= 25_C
20
0
10
0
1 pA
IGSS @ 25_C
0.1 pA
0
3
6
9
12
15
0
−1
−2
−3
−4
−5
V
GS(off) − Gate-Source Cutoff Voltage (V)
VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
100
300
20
16
12
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
80
60
40
240
180
120
60
T
A
= −55_C
rDS
g
os
25_C
8
4
125_C
20
0
r
@ I = 1 mA, V = 0 V
D GS
@ V = 10 V, V = 0 V, f = 1 kHz
DS GS
DS
os
g
0
0
0
−1
−2
−3
−4
−5
0.1
1
10
V
− Gate-Source Cutoff Voltage (V)
ID − Drain Current (mA)
GS(off)
Output Characteristics
Output Characteristics
15
30
VGS(off) = −3 V
VGS(off) = −1.5 V
V
= 0 V
GS
V
= 0 V
GS
12
9
24
18
12
6
−0.2 V
−0.4 V
−0.4 V
−0.8 V
−1.2 V
−1.6 V
6
−0.6 V
−0.8 V
3
−2.0 V
−2.4 V
−1.0 V
0
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
V
− Drain-Source Voltage (V)
V
DS − Drain-Source Voltage (V)
DS
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
4
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Output Characteristics
Output Characteristics
20
50
VGS(off) = −1.5 V
VGS(off) = −3 V
V
= 0 V
GS
V
= 0 V
GS
16
12
8
40
30
20
10
0
−0.2 V
−0.4 V
−0.8 V
−1.2 V
−0.4 V
−0.6 V
−1.6 V
−2.0 V
−2.4 V
−0.8 V
−1.0 V
4
0
0
2
4
6
8
10
0
2
4
6
8
10
V
DS − Drain-Source Voltage (V)
V
DS − Drain-Source Voltage (V)
Transfer Characteristics
Transfer Characteristics
30
100
VGS(off) = −1.5 V
V
= 10 V
VGS(off) = −3 V
VDS = 10 V
DS
24
18
80
60
T
A
= −55_C
T
A
= −55_C
25_C
25_C
12
6
40
20
0
125_C
125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
30
24
50
40
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
T
A
= −55_C
T
A
= −55_C
25_C
18
12
6
30
20
10
0
125_C
25_C
125_C
0
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
5
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
100
g
R
L
fs
A
+
V
1 ) R g
os
L
80
60
80
60
Assume VDD = 15 V, VDS = 5 V
VGS(off) = −1.5 V
VGS(off) = −3 V
10
10 V
R
+
L
I
D
VGS(off) = −1.5 V
40
40
20
0
20
0
VGS(off) = −3 V
1
100
0.1
1
10
ID − Drain Current (mA)
ID − Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
15
12
9
10
f = 1 MHz
f = 1 MHz
8
6
4
2
0
VDS = 0 V
VDS = 0 V
6
VDS = 5 V
3
VDS = 5 V
0
0
−4
−8
−12
−16
−20
0
−4
−8
−12
−16
−20
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Input Admittance vs. Frequency
Forward Admittance vs. Frequency
100
10
100
10
g
−g
fg
ig
b
ig
b
fg
1
1
T
V
= 25_C
D = 10 mA
T
= 25_C
A
A
DG = 10 V
V
DG = 10 V
I
ID = 10 mA
Common−Gate
Common−Gate
0.1
0.1
200
500
100
200
500
1000
100
1000
f − Frequency (MHz)
f − Frequency (MHz)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
6
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Reverse Admittance vs. Frequency
Output Admittance vs. Frequency
10
100
T
= 25_C
T
V
= 25_C
D = 10 mA
A
A
VDG = 10 V
DG = 10 V
I
D = 10 mA
I
Common−Gate
Common−Gate
1
10
b
og
−b
rg
+g
rg
g
og
−g
rg
0.1
1
0.01
0.1
100
200
500
1000
100
200
500
1000
f − Frequency (MHz)
f − Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
150
120
VDS = 10 V
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
16
12
8
90
60
T
A
= −55_C
ID = 1 mA
25_C
30
0
ID = 10 mA
4
0
125_C
10
100
1 k
10 k
100 k
0.1
1
10
f − Frequency (Hz)
ID − Drain Current (mA)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
J309-TO-92
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
Linear
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