JANTX1N3611EG1 [VISHAY]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, GLASS PLASTIC PACKAGE-2;
| 型号： | JANTX1N3611EG1 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, GLASS PLASTIC PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1
Patented*
Vishay Semiconductors
formerly
Glass Passivated Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 1.0A
DO-204AL (EG1)
1.0 (25.4)
MIN.
Features
• Qualified to MIL-PRF-19500/228
• Class 1 high temperature metallurgically bonded
construction brazed > 600°C
0.107 (2.7)
0.080 (2.0)
DIA.
• 1.0 ampere operation at TA = 55°C with no thermal runaway
• Typical IR less than 0.1µA
• Cavity-free, glass passivated junction. In epoxy over
hermetic glass
Dimensions
in inches and
(millimeters)
0.205 (5.2)
0.160 (4.1)
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension
®
Mechanical Data
1.0 (25.4)
MIN.
Case: DO-204AL, molded epoxy over glass body (EG1)
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
0.034 (0.86)
0.028 (0.71)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any Weight: 0.015oz., 0.4g
Flammability: Epoxy is rated UL 94V-0.
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602
and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level
Parameter
Symbol
Unit
J,JX 1N3611 J,JX 1N3612 J,JX 1N3613 J,JX 1N3614 J,JX 1N3957
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
1000
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA = 55°C
IF(AV)
1.0
A
Peak forward surge current 10 surges of 8.3ms each at
1 min. intervals super-imposed on IO = 750mA DC;
VR = rated VRRM TA = 100°C (per MIL-STD-750 m 4066)
IFSM
30
A
RθJL
RθJA
38
45
Typical thermal resistance(1)
°C/W
Operating junction and storage temperature range
Barometric Pressure
TJ, TSTG
Hg
–65 to +175
°C
8
54
87
mm
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Minimum reverse breakdown voltage at 50µA
VBR
220
440
660
880
1100
V
V
Maximum instantaneous
at 1.0A, TA = 25°C
at 3.0A, TA = 25°C
at 1.0A, TA = –65°C
1.1
1.3
1.5
forward voltage Tp = 300µs
VF
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
1
IR
trr
µA
µs
pF
TA = 150°C
300
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
2.0
8.0
Typical junction capacitance at 4V, 1MHz
CJ
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88652
6-Mar-02
www.vishay.com
1
JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1
Vishay Semiconductors
formerly
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Typical Instantaneous
Fig. 1 – Forward Current Derating Curve
Forward Characteristics
10
1
1.0
60 Hz Resistive
or Inductive Load
0.375" (9.5mm)
Lead length
T
= 150°C
J
0.75
0.5
T
= 25°C
J
0.1
0.25
0
Pulse Width = 300µs
1% Duty Cycle
0.01
25
50
100
Ambient Temperature (°C)
150
75
125
175
1.2
0.4
0.6
0.8
1.0
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 – Typical Reverse Characteristics
Fig. 4 – Typical Junction Capacitance
10
20
10
T
= 25°C
J
f = 1.0 MHz
= 50mVp-p
V
sig
T
= 125°C
J
1
T
= 75°C
J
0.1
0.01
T
= 25°C
J
1
100
0.1
10
Reverse Voltage (V)
1
0
20
40
80
100
60
Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Transient
Thermal Impedance
100
10
1
0.1
0.01
0.1
1
10
100
t, Pulse Duration, sec
www.vishay.com
2
Document Number 88652
6-Mar-02
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