K3012PG [VISHAY]
Optocoupler with Phototriac Output; 与光耦可控硅输出
| 型号： | K3012PG |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Phototriac Output |
| 文件： | 总9页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K3010P(G) Series
Vishay Telefunken
Optocoupler with Phototriac Output
Description
The K3010P(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emit-
ting diode in a 6-lead plastic dual inline package. The
elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance be-
tween input and output for highest safety
requirements.
Applications
14827
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced
isolation):
For appl. class I – IV at mains voltage ≤ 300 V
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Monitors, air conditioners, line switches, solid
state relays, microwaves.
~
~
6
5
2
4
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
1
3
A (+) C (–) nc
VDE 0884
Note: Pin 5 must not be connected
Optocoupler for electrical safety requirements
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
)
RMS
VDE 0804
Telecommunication apparatus and data
processing
IEC 65
Safety for mains-operated electronic and related
household apparatus
Order Instruction
Ordering Code
K3010P/ K3010PG
CTR Ranking
Remarks
1)
< 15 mA
< 10 mA
< 5 mA
1)
1)
K3011P/ K3011PG
K3012P/ K3012PG
1)
G = Leadform 10.16 mm; G is not marked on the body
Document Number 83504
Rev. A4, 13–Sep–99
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K3010P(G) Series
Vishay Telefunken
Features
Approvals:
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
RMS
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
FIMKO (SETI): EN 60950,
Certificate number 12398
Thickness through insulation ≥ 0.75 mm
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
General features:
VDE 0884, Certificate number 94778
Isolation materials according to UL 94-VO
VDE 0884 related features:
Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
Isolation test voltage (partial discharge test
voltage) V = 1.6 kV
pd
I
offered in 3 groups
FT
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
(848 V peak)
Coupling System C
RMS
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Test Conditions
Symbol
Value
5
Unit
V
V
R
Forward current
Forward surge current
Power dissipation
I
80
3
100
100
mA
A
mW
C
F
t ≤ 10 s
I
p
FSM
T
≤ 25 C
P
T
j
amb
V
Junction temperature
Output (Detector)
Parameter
Off state output terminal voltage
On state RMS current
Test Conditions
Symbol
V
DRM
Value
250
100
1.5
Unit
V
mA
A
I
TRMS
Peak surge current, non-repetitive t ≤ 10 ms
I
TMS
p
Power dissipation
Junction temperature
T
amb
≤ 25 C
P
T
j
300
100
mW
C
V
Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
t = 1 min
≤ 25 C
Symbol
V
IO
Value
3.75
350
Unit
kV
mW
C
C
C
1)
T
amb
P
tot
T
–40 to +85
–55 to +100
260
amb
T
stg
2 mm from case, t ≤ 10 s
T
sd
1)
Related to standard climate 23/50 DIN 50014
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I = 50 mA
V = 0, f = 1 MHz
R
Symbol
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
V
F
F
C
j
Output (Detector)
Parameter
Forward peak off-state
voltage (repetitive)
Test Conditions
= 100 nA
Symbol
V
DRM
Min.
250
Typ.
Max.
3
Unit
V
1)
I
DRM
Peak on-state voltage
I
I
= 100 mA
V
TM
1.5
10
0.2
V
V/ s
V/ s
TM
Critical rate of rise of
off-state voltage
1)
= 0, I = 30 mA
(dv/dt)
FT
FT
cr
(dv/dt)
0.1
crq
Test voltage must be applied within dv/dt ratings
Coupler
Parameter
Emitting diode trigger
current
Test Conditions
V = 3 V, R = 150
Type
Symbol
Min.
Typ.
8
5
2
100
Max.
Unit
mA
mA
mA
A
K3010P(G)
K3011P(G)
K3012P(G)
I
FT
I
FT
I
FT
15
10
5
S
L
Holding current
I = 10 mA, V ≥ 3 V
I
H
F
S
Note: I is defined as a minimum trigger current
FT
R
S
Test condition:
dv/dtcr
VS = 2/3 VDRM
(Sine wave)
RL = 33 kΩ
dv/dtcrq
V~
I
FT
Veff = 30 V
(Sine wave)
RL = 2 kΩ
R
L
95 10813
Figure 1. Test circuit for dv/dt and dv/dt
cr
crp
Document Number 83504
Rev. A4, 13–Sep–99
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K3010P(G) Series
Vishay Telefunken
I
F
I
FT
95 10814
I = 0
F
dv / dt
dv / dt
cr
crq
dv/dtcr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off-state to the on-state
dv/dtcrq Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from IFT to zero
Figure 2.
270 Ω
+5 V
M
VAC ~
0.1 µF
TTL
Galvanical separation
95 10815
Figure 3. Motor control circuit
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 4
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Value
130
Unit
mA
I
si
Output (Detector)
Parameters
Power dissipation
Test Conditions
≤ 25 C
Symbol
Value
600
Unit
mW
T
amb
P
si
Coupler
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
V
IOTM
Value
6
150
Unit
kV
C
T
si
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge test voltage –
Routine test
Test Conditions
100%, t = 1 s
Symbol
V
pd
Min.
1.6
6
Typ.
Max.
Unit
kV
kV
test
V
IOTM
Partial discharge test voltage –
Lot test (sample test)
Insulation resistance
t
= 60 s, t
= 10 s,
V
pd
1.3
kV
Tr
test
(see figure 5)
V
V
12
= 500 V
R
R
10
IO
IO
IO
11
= 500 V,
10
IO
T
V
= 100 C
= 500 V,
amb
9
R
IO
10
IO
T
= 150 C
amb
(construction test only)
V
IOTM
675
600
t , t = 1 to 10 s
1
2
t , t = 1 s
3
4
P
si
(mW)
t
= 10 s
= 12 s
525
450
375
300
225
150
75
test
t
stres
V
Pd
V
V
IOWM
IORM
I
(mA)
si
0
t
3
t
t
4
0
test
0
25
50
75
100
( °C )
125
150
t
1
t
Tr
= 60 s
t
2
t
stres
13930
95 10925
T
amb
t
Figure 4. Derating diagram
Figure 5. Test pulse diagram for sample test according to
DIN VDE 0884
Document Number 83504
Rev. A4, 13–Sep–99
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K3010P(G) Series
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
400
300
200
100
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Coupled device
I
I
FT
F
I =100mA
T
Phototransistor
IR-diode
0
20
40
60
80
100
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11701
T
amb
– Ambient Temperature ( °C )
96 11923
T
amb
– Ambient Temperature ( °C )
Figure 6. Total Power Dissipation vs.
Ambient Temperature
Figure 9. Relative On - State vs. Ambient Temperature
1000.0
100.0
10.0
1.0
100
V
I =0
F
=100V
DR
10
0.1
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V – Forward Voltage ( V )
20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
96 11862
96 11924
T
amb
F
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Off - State Current vs. Ambient Temperature
1.5
1.4
250
200
150
V =3V
R =150
L
S
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I =15mA
FT
100
50
0
–50
–100
–150
–200
–250
–30 –20 –10 0 10 20 30 40 50 60 70 80
–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5
96 11922
T
amb
– Ambient Temperature ( °C )
96 11925
V
TM
– On–State Voltage ( V )
Figure 8. Relative Threshold Forward Current vs.
Ambient Temperature
Figure 11. On - State Current vs. Ambient Temperature
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Type
XXXXXX
Date
Code
(YM)
Production
Location
918 A TK 63
V
0884
D
E
Safety
Logo
15090
Coupling
System
Company
Logo
Indicator
Figure 12. Marking example
Dimensions of K301.PG in mm
14771
Document Number 83504
Rev. A4, 13–Sep–99
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K3010P(G) Series
Vishay Telefunken
Dimensions of K301.P in mm
14770
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Document Number 83504
Rev. A4, 13–Sep–99
K3010P(G) Series
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83504
Rev. A4, 13–Sep–99
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