KBJ610G [VISHAY]
Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon,;
| 型号： | KBJ610G |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, 二极管 |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBJ6005G–KBJ610G
Vishay Lite–On Power Semiconductor
6.0A Glass Passivated Bridge Rectifier
Features
Glass passivated die construction
High case dielectric strength of 1500V
Low reverse leakage current
RMS
Surge overload rating to 170A peak
Ideal for printed circuit board applications
Plastic material – UL Recognition flammability
classification 94V–0
14 413
This series isUL listed under recognized
component index, file number E95060
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
50
100
200
400
600
800
1000
170
Unit
V
V
V
V
V
V
V
A
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
KBJ6005G
KBJ601G
KBJ602G
KBJ604G
KBJ606G
KBJ608G
KBJ610G
V
RRM
=V
RWM
=V
R
Peak forward surge current
I
FSM
Average forward current
T =110 C
C
I
6
A
FAV
Junction and storage temperature range
T =T
–65...+150
C
j
stg
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =3A
V
1
5
500
120 A s
pF
V
A
A
2
F
F
T =25 C
I
I
I t
C
R
T =125 C
C
R
2
2
I t Rating for fusing
Diode capacitance
Thermal resistance
junction to case
V =4V, f=1MHz
C
D
80
6
R
mounted on
75x75x1.6mm aluminum plate
R
thJC
K/W
Rev. A2, 24-Jun-98
1 (4)
KBJ6005G–KBJ610G
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25 C unless otherwise specified)
6
1000
100
10
with heatsink
T = 25°C
j
f = 1 MHz
5
4
3
without heatsink
2
1
Resistive or inductive load
0
0
25
50
75 100 125
150
0.1
1.0
V – Reverse Voltage ( V )
R
10
100
15643
15640
T
amb
– Ambient Temperature ( °C )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
1000
10
T = 150°C
j
100
10
T = 125°C
j
1.0
T = 150°C
j
T = 100°C
j
T = 25°C
j
0.1
1.0
0.1
T = 25°C
j
I
Pulse Width = 300 µs
F
0.01
0
20 40
60 80 100 120 140
0
0.4
0.8
1.2
1.6 1.8
15641
V – Forward Voltage ( V )
F
15644
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
180
T = 150°C
j
Single Half Sine–Wave
(JEDEC Method)
160
120
80
40
0
1
100
10
15642
Number of Cycles at 60 Hz
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
KBJ6005G–KBJ610G
Vishay Lite–On Power Semiconductor
Dimensions in mm
14472
Case: molded plastic
Polarity: molded on body
Approx. weight: 4.6 grams
Mounting: through hole for #6 screw
Mounting torque: 5.0 in–lbs maximum
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
KBJ6005G–KBJ610G
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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