KBPC3501W [VISHAY]
Bridge Rectifier Diode, 1 Phase, 35A, 100V V(RRM), Silicon,;
| 型号： | KBPC3501W |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 35A, 100V V(RRM), Silicon, 局域网 二极管 |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
35A Bridge Rectifier
Features
KBPC – W
Diffused junction
KBPC
Low reverse leakage current
Surge overload rating to 400A peak
Electrically isolated metal case for maximum
heat dissipation
Low power loss, high efficiency
Case to terminal isolation voltage 2500V
This series is UL Listed under recognized
component index, file number E95060
14 453
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test
Type
Symbol
Value
Unit
Conditions
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
KBPC35005/W
KBPC3501/W
KBPC3502/W
KBPC3504/W
KBPC3506/W
KBPC3508/W
KBPC3510/W
V
=V
=V
50
100
200
400
600
800
1000
400
V
V
V
V
V
V
V
A
A
C
RRM
RWM
R
Peak forward surge current
Average forward current
Junction and storage temperature range
I
FSM
T =55 C
C
I
35
FAV
T =T
j
–65...+150
stg
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Forward voltage
Reverse current
I =17.5A
V
1.2
10
1.0
664 A s
pF
V
A
mA
2
F
F
T =25 C
I
I
I t
C
R
T =125 C
C
R
2
2
I t Rating for fusing
Diode capacitance
Thermal resistance junction to case
V =4V, f=1MHz
R
C
D
300
2.7
R
thJC
K/W
Rev. A2, 24-Jun-98
1 (4)
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25 C unless otherwise specified)
40
30
20
400
Mounted on a
220 x 220 x 50 mm
AL plate heatsink
T = 150°C
j
Single Half Sine–Wave
(JEDEC Method)
300
200
10
0
100
0
Resistive or inductive load
0
25
50
75
100 125 150
1
10
100
15745
15747
T
amb
– Ambient Temperature ( °C )
Number of Cycles at 60 Hz
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
10
10
T = 100°C
j
1.0
1.0
0.1
0.1
T = 25°C
j
T = 25°C
j
I
Pulse Width = 300 µs
F
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V – Forward Voltage ( V )
0
20
40
60 80 100 120 140
15748
15746
Percent of Rated Peak Reverse Voltage (%)
F
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
Dimensions in mm
14481
Case: molded epoxy
Terminals: plated leads solderable per MIL–STD–202, method 208
Polarity: symbols marked on case
Approx. weight: KBPC 31.6 grams,
KBPC–W 28.5 grams
Mounting: through hole for #10 screw
Mounting torque: 8.0 Inch–pounds maximum
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
相关型号：
KBPC3501W-LF
Bridge Rectifier Diode, 1 Phase, 35A, 100V V(RRM), Silicon, ROHS COMPLIANT, METAL, KBPC-W, 4 PIN
WTE
©2020 ICPDF网 联系我们和版权申明