LH1262C [VISHAY]
Dual Photovoltaic MOSFET Driver Solid State Relay; 光伏双MOSFET驱动固态继电器
| 型号： | LH1262C |
| 厂家： | 
VISHAY |
| 描述： | Dual Photovoltaic MOSFET Driver Solid State Relay |
| 文件： | 总6页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LH1262CAC/ CACTR/ CB
Vishay Semiconductors
Dual Photovoltaic MOSFET Driver Solid State Relay
DIP
Features
8
7
6
5
• High Open Circuit Voltage
• High Short Circuit Current
• Isolation Test Voltage 5300 V
• Logic Compatible Input
• High Reliability
RMS
1
2
3
4
SMD
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
+ Control 1
– Control 1
+ Control 2
– Control 2
– Output 1
+ Output 1
– Output 2
+ Output 2
i179020
Pb
e3
Pb-free
Agency Approvals
Description
• UL1577, File No. E52744 System Code H or J,
Double Protection
The LH1262CB/CAC Photovoltaic MOSFET Driver
consists of two LEDs optically coupled to two photo-
diode arrays. The photodiode array provides a float-
ing source with adequate voltage and current to drive
high-power MOSFET transistors. Optical coupling
provides a high I/ O Isolation voltage. In order to turn
the MOSFET off, an external resistance (gate-to-
source) is required for gate discharge.
• BSI/BABT Cert. No. 7980
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• FIMKO Approval
Applications
High-side Driver
Order Information
Solid State Relays
Floating Power Supply
Power Control
Data Acquisition
ATE
Part
Remarks
Tubes, SMD-8
LH1262CAC
LH1262CACTR
LH1262CB
Tape and Reel, SMD-8
Tubes, DIP-8
Isolated Switching
See "Solid Statae Relays" (Application Note 56)
Document Number 83802
Rev. 1.3, 26-Oct-04
www.vishay.com
1
LH1262CAC/ CACTR/ CB
Vishay Semiconductors
Absolute Maximum Ratings, T
= 25 °C
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Ratings for extended periods of time can adversely affect reliability.
SSR
Parameter
Test condition
Symbol
IF
Value
50
Unit
mA
LED input ratings continuous forward
current
LED input ratings reverse voltage
Photodiode array reverse voltage
Ambient operating temperature range
Storage temperature range
Pin soldering time
IR ≤ 10 µA
VR
VR
5.0
100
V
V
IR ≤ 2.0 µA
Tamb
Tstg
TS
- 40 to + 100
- 40 to + 150
270
°C
°C
t = 7.0 s max.
t = 60 s min.
°C
Input/output isolation voltage
VISO
5300
VRMS
Electrical Characteristics, T
= 25 °C
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Parameter
LED forward voltage
Test condition
IF = 10 mA
IF = 10 µA
IR = 2.0 µA
Symbol
VF
Min
Typ.
1.26
Max
1.45
Unit
V
1.15
Detector forward voltage
VF(PDA)
VR(PDA)
VOC
VOC
VOC
ISC
14
200
12
V
V
Detector reverse voltage
Open circuit voltage (pins 5, 6 or 7, 8)
IF = 5.0 mA
IF = 10 mA
IF = 20 mA
IF= 5.0 mA
IF = 10 mA
IF = 20 mA
10
15
V
13.1
13.3
2.44
5.24
10.8
35
V
V
Short circuit current (pins 5, 6 or 7, 8)
1.0
2.6
6.5
14
µA
µA
µA
µs
ISC
ISC
IF = 20 mA1)
IF = 20 mA1)
Turn-on time
Turn-off time
ton
toff
90
µs
1) f = 1.0 kHz, pulse width = 100 µs, load (RL) = 1.0 MΩ, 15 pF; measured at 90 % rated voltage (ton), 10 % rated voltage (toff). Actuation
speed depends upon the external ton and toff circuitry and the capacitance of the MOSFET.
Functional Description
Figure 1 outlines the IV characteristics of the illumi-
nated photodiode array (PDA). For operation at volt-
ages below V , the PDA acts as a nearly constant
OC
current source. The actual region of operation
depends upon the load.
The amount of current applied to the LED (pins 1 and
2 or 3 and 4) determines the amount of light produced
for the PDA. For high temperature operation, more
LED current may be required.
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2
Document Number 83802
Rev. 1.3, 26-Oct-04
LH1262CAC/ CACTR/ CB
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
17
16
I
I
I
=20 mA
=10 mA
=5.0 mA
I
=20 mA
F
F
F
F
17 µA
15
14
13
12
11
10
0
I
=10 mA
=5.0 mA
F
8 µA
µA
I
F
4
10 13.5 14 14.5 +V
Open Circuit Voltage (V
)
OC
-40
-20
0
20
40
60
80 100
ilh1262cb_01
Ambient Temperature (°C)
ilh1262cb_04
Figure 1. Typical PDA ON Characteristics
Figure 4. Typical PDA ON Characteristics
16
14
25
20
15
10
I
=20 mA
12
10
8
F
I
=10 mA
F
6
R
R
R
R
R
=
L
L
L
L
L
=10 MΩ
=5.1 MΩ
=2.2 MΩ
=1.0 MΩ
I
=5.0 mA
F
4
5
0
2
0
-40
-20
0
20
40
60
80
100
0
4
8
12
16
2
0
Ambient Temperature (°C)
ilh1262cb_02
LED Forward Current (mA)
ilh1262cb_05
Figure 2. Typical PDA ON Characteristics
Figure 5. Typical PDA ON Characteristics
20
1.6
1.5
1.4
1.3
1.2
1.1
1.0
16
I
=50 mA
F
I
=10 mA
F
12
I
=20 mA
F
8
4
0
I
=2.0 mA
-20
F
I
=5.0 mA
20
F
0
4
8
12
16
20
LED Forward Current (mA)
-40
0
40
60
80
ilh1262cb_03
ilh1262cb_06
Ambient Temperature (°C)
Figure 3. Typical PDA ON Characteristics
Figure 6. Typical PDA ON Characteristics
Document Number 83802
Rev. 1.3, 26-Oct-04
www.vishay.com
3
LH1262CAC/ CACTR/ CB
Vishay Semiconductors
Figure 7. Typical PDA ON Characteristics
4
3
2
1
10
10
10
I
F=20 mA
t
on
t
on
t
off
t
off
R =2.2 MΩ
R =1.0 MΩ
L
L
10
10
100
1000
ilh1262cb_07
Load Capacitance (pF)
8
–
1
Switch1
N-Channel
MOSFETs
P-Channel
JFET
Channel 1
Control
+
7
2
2.0MΩ
6
–
3
4
Switch2
N-Channel
MOSFETs
P-Channel
JFET
Channel 2
Control
+
5
2.0MΩ
ilh1262cb_08
Figure 8. Typical Dual Form A Solid State Relay Application
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4
Document Number 83802
Rev. 1.3, 26-Oct-04
LH1262CAC/ CACTR/ CB
Vishay Semiconductors
Package Dimensions in Inches (mm)
DIP
pin one ID
4
5
3
6
1
2
7
.268 (6.81)
.255 (6.48)
8
ISO Method A
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (0.76)
.300 (7.62)
typ.
.031 (0.79)
4° typ.
.150 (3.81)
.130 (3.30)
.250 (6.35)
.230 (5.84)
.050 (1.27)
10°
.035 (.89)
.020 (.51)
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.130 (3.30)
.110 (2.79)
.100 (2.54) typ.
i178008
Package Dimensions in Inches (mm)
SMD
Pin one I.D
.
.030 (.76)
.268 (6.81)
.255 (6.48)
R .010 (.25)
.100 (2.54)
.070 (1.78)
.060 (1.52)
.315 (8.00) min
.435 (11.05)
.390 (9.91)
.379 (9.63)
.395 (10.03)
.375 (9.52)
.031 (.79)
typ.
ISO Method A
.312 (7.80)
.298 (7.52)
.045 (1.14)
.030 (0.78)
.150 (3.81)
.130 (3.30)
Radius
3° to7°ˇ
.010
(2.54)
typ.
4°
typ.
10°ˇ
.008 (.25)
.004 (.10)
.040 (1.02)
.020 (.51)
.315
(8.00)
typ.
.050
(1.27)
typ.
.100 (2.54)
typ.
i178009
Document Number 83802
Rev. 1.3, 26-Oct-04
www.vishay.com
5
LH1262CAC/ CACTR/ CB
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6
Document Number 83802
Rev. 1.3, 26-Oct-04
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