LL4148 [VISHAY]
Silicon Epitaxial Planar Diodes; 硅外延平面二极管
| 型号： | LL4148 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Epitaxial Planar Diodes |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL4148.LL4448
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
Electrical data identical with the devices 1N4148
and 1N4448 respectively
Applications
94 9371
Extreme fast switches
Absolute Maximum Ratings
T = 25 C
j
Parameter
Repetitive peak reverse voltage
Reverse voltage
Test Conditions
Type
Symbol
V
RRM
Value
100
75
Unit
V
V
V
R
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
t =1 s
I
2
500
300
150
500
175
A
p
FSM
I
mA
mA
mA
mW
C
FRM
I
F
V =0
R
I
FAV
P
V
Junction temperature
T
j
Storage temperature range
T
stg
–65...+175
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85557
Rev. 3, 01-Apr-99
1 (4)
LL4148.LL4448
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =5mA
LL4448
LL4148
LL4448
V
V
V
0.62
0.72
1
1
25
50
5
V
V
V
nA
A
A
F
F
F
F
I =50mA
0.86
0.93
F
I =100mA
F
V =20V
I
I
I
R
R
V =20V, T =150 C
R
j
R
R
V =75V
R
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
I =100 A, t /T=0.01, t =0.3ms
V
(BR)
100
45
V
R
p
p
V =0, f=1MHz, V =50mV
C
D
r
4
pF
%
ns
ns
R
HF
V =2V, f=100MHz
HF
I =I =10mA, i =1mA
t
rr
t
rr
8
4
F
R
R
I =10mA, V =6V, i =0.1xI ,
F
R
R
R
R =100
L
Characteristics (Tj = 25 C unless otherwise specified)
1000
100
10
1000
100
10
LL 4148
LL 4448
Scattering Limit
Scattering Limit
1
1
T =25°C
j
T =25°C
j
0.1
0.1
2.0
2.0
0
0.4
0.8
1.2
1.6
0
0.4
0.8
1.2
1.6
94 9097
V – Forward Voltage ( V )
F
94 9096
V – Forward Voltage ( V )
F
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85557
Rev. 3, 01-Apr-99
LL4148.LL4448
Vishay Telefunken
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0
f=1MHz
T =25°C
j
T =25°C
j
Scattering Limit
1
100
100
1
10
0.1
1
10
V – Reverse Voltage ( V )
R
94 9098
V
– Reverse Voltage ( V )
94 9099
R
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
96 12070
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85557
Rev. 3, 01-Apr-99
3 (4)
LL4148.LL4448
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85557
Rev. 3, 01-Apr-99
相关型号：
LL4148-7-F
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIMELF-2
DIODES
LL4148-T1-LF
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, GLASS, MINIMELF-2
WTE
©2020 ICPDF网 联系我们和版权申明