M6045P-E3/45 [VISHAY]
Dual Common-Cathode Schottky Rectifier; 双共阴极肖特基整流器
| 型号： | M6045P-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | Dual Common-Cathode Schottky Rectifier |
| 文件： | 总5页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
M6035P thru M6060P
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
2
• High frequency operation
1
• Solder dip 260 °C, 40 s
TO-247AD (TO-3P)
PIN 2
CASE
PIN 1
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
MECHANICAL DATA
VRRM
35 V, 45 V, 60 V
350 A
Case: TO-247AD (TO-3P)
IFSM
Epoxy meets UL 94V-0 flammability rating
VF at IF = 30 A
TJ max.
0.50 V, 0.56 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
M6035P
M6045P
M6060P
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
V
Maximum average forward rectified total device
60
30
IF(AV)
IFSM
IRRM
A
A
A
current (Fig. 1)
per diode
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load per diode
350
2.0
Peak repetitive reverse current at tp = 2 µs, 1 kHz
per diode
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
Document Number: 88980
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
M6035P thru M6060P
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
M6035P M6045P
M6060P
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
TYP.
MAX.
TYP.
MAX.
IF = 10 A
IF = 20 A
IF = 30 A
0.42
0.49
0.54
-
-
0.43
0.52
0.59
-
-
TJ = 25 °C
TJ = 125 °C
0.60
0.64
Instantaneous forward voltage per diode (1)
VF
V
IF = 10 A
IF = 20 A
IF = 30 A
0.31
0.42
0.50
-
-
0.33
0.47
0.56
-
-
0.55
0.60
TJ = 25 °C
TJ = 125 °C
135
110
600
160
240
140
600
160
µA
mA
Reverse current per diode (2)
Typical junction capacitance
VR
IR
4.0 V, 1 MHz
CJ
1150
-
1090
-
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
M6035P
M6045P
M6060P
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
M6045P-E3/45
M6060P-E3/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
30/tube
DELIVERY MODE
6.14
6.14
45
45
Tube
Tube
30/tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
70
16
14
12
10
8
Resistive or Inductive Load
M6035P & M6045P
D = 0.8
D = 0.5
60
50
40
30
20
10
0
D = 0.3
D = 1.0
D = 0.2
D = 0.1
6
T
4
2
D = tp/T
25
tp
0
0
25
50
75
100
125
150
175
0
5
10
15
20
30
35
Case Temperature (°C)
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 1. Forward Current Derating Curve
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88980
Revision: 19-May-08
New Product
M6035P thru M6060P
Vishay General Semiconductor
16
14
12
10
8
100
10
1
D = 0.8
M6060P
TJ = 150 °C
TJ = 125 °C
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
6
T
J = 25 °C
T
4
M6060P
2
D = tp/T
25
tp
0.1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
30
35
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Figure 3. Forward Power Loss Characteristics Per Diode
Figure 6. Typical Instantaneous Forward Characteristics Per Diode
400
1000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TJ = 150 °C
100
300
200
100
TJ = 125 °C
10
M6035P & M6045P
1
0.1
TJ = 25 °C
0.01
1
10
100
10
20
30
40
50
60
70
80
90 100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 7. Typical Reverse Characteristics Per Diode
100
1000
TJ = 150 °C
TJ = 150 °C
100
10
TJ = 125 °C
10
TJ = 125 °C
M6060P
1
TJ = 25 °C
1
0.1
TJ = 25 °C
M6035P & M6045P
0.01
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10
20
30
40
50
60
70
80
90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Instantaneous Forward Characteristics Per Diode
Figure 8. Typical Reverse Characteristics Per Diode
Document Number: 88980
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
M6035P thru M6060P
Vishay General Semiconductor
10 000
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
1000
1
M6035P & M6045P
M6060P
M6035P & M6045P
M6060P
100
0.1
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Figure 9. Typical Junction Capacitance Per Diode
Figure 10. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.203 (5.16)
0.193 (4.90)
0.078 (1.98) REF.
0.323 (8.2)
0.313 (7.9)
30°
10
0.170
(4.3)
10° TYP.
0.840 (21.3)
0.820 (20.8)
Both Sides
0.142 (3.6)
0.138 (3.5)
1
2
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.118 (3.0)
0.108 (2.7)
0.127 (3.22)
0.117 (2.97)
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.030 (0.76)
0.020 (0.51)
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
PIN 2
CASE
PIN 1
PIN 3
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88980
Revision: 19-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明