MBR0540-GS18 [VISHAY]

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2;
MBR0540-GS18
型号: MBR0540-GS18
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2

文件: 总6页 (文件大小:115K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR0540  
Vishay Semiconductors  
VISHAY  
Small Surface Mount Schottky Rectifier  
Features  
• For surface mounted applications  
• Low profile package  
• Ideal for automated placement  
• Low power loss, high efficiency  
• High temperature soldering:  
250 °C/10 seconds at terminals  
17431  
Mechanical Data  
Case: SOD-123 plastic case  
Polarity: Band denotes cathode end  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
Tape and Reel  
MBR0540  
MBR0540-GS18 or MBR0540-GS08  
B4  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
40  
Unit  
V
Maximum repetitive peak  
reverse voltage  
V
RRM  
Working peak reverse voltage  
Maximum DC blocking voltage  
Max. average forward rectified  
V
40  
40  
V
V
A
RWM  
V
R
V
= 115 °C  
I
0.5  
C
FAV  
current at rated V  
R
Peak repetitive forward current 20 kHz square wave,  
at rated V = 115 °C  
I
1.0  
5.5  
A
A
FRM  
T
R
C
Peak forward surge current  
8.3 ms single half sine-wave  
T = 25 °C  
I
FSM  
L
Voltage rate of change at rated T = 25 °C  
dv/dt  
1,000  
V/µs  
j
V
R
Document Number 85677  
Rev. 1.2, 22-Apr-04  
www.vishay.com  
1
MBR0540  
Vishay Semiconductors  
VISHAY  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
118  
Unit  
Typical thermal resistance j  
unction to lead  
R
°C/W  
thJL  
Typical thermal resistance  
junction to ambient  
R
206  
°C/W  
°C  
thJA  
Operating junction and storage  
temperature  
T , T  
- 55 to + 150  
j
stg  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 0.5 A, T = 25 °C  
Symbol  
Min  
Typ.  
Max  
0.51  
Unit  
V
Maximum instantaneous  
I
V
F
j
F
1)  
forward voltage  
I
I
I
= 0.5 A, T = 100 °C  
V
V
V
I
0.46  
0.62  
0.61  
20  
V
V
F
F
F
j
F
F
F
= 1.0 A, T = 25 °C  
j
= 1.0 A, T = 100 °C  
V
j
Maximum DC reverse current  
V
V
V
= 40 V, T = 25 °C  
µA  
mA  
µA  
R
j
R
= 40 V, T = 100 °C  
I
I
5.0  
R
R
j
R
= 20 V, T = 25 °C  
10  
j
R
1)  
Pulse test: 300 ms pulse width, 1 % duty cycle  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
6
5
4
0.8  
0.6  
Resistive or  
Inductive Load  
8.3 Single Half Sine-Wave  
(JEDEC Method) at rated T  
L
3
2
1
0
0.4  
0.2  
0
1
10  
100  
50 60 70 80 90 100 110 120 130 140 150  
17909  
Number of Cycles at 60 Hz  
°
Lead Temperature ( C )  
18472  
Fig. 1 Derating Curve Output Rectified Current  
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 85677  
Rev. 1.2, 22-Apr-04  
MBR0540  
Vishay Semiconductors  
VISHAY  
1
0.1  
0.01  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Instantaneous Forward Voltage ( V )  
18474  
Fig. 3 Typical Instantaneous Forward Characteristics  
1
0.1  
0.01  
0.001  
0
20  
40  
60  
80  
100  
18475  
Percent of Rated Peak Reverse Voltage ( % )  
Fig. 4 Typical Reverse Characteristics  
1000  
100  
10  
1
0
5
10 15 20 25 30 35 40  
- Reverse Voltage ( V )  
18476  
V
R
Fig. 5 Typical Junction Capacitance  
Document Number 85677  
Rev. 1.2, 22-Apr-04  
www.vishay.com  
3
MBR0540  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm (Inches)  
0.55 (0.022)  
Mounting Pad Layout  
Cathode Band  
2.40 (0.094) 1.40 (0.055)  
1.70 (0.067)  
1.40 (0.055)  
ISO Method A  
17432  
0.25 (0.010) min.  
www.vishay.com  
4
Document Number 85677  
Rev. 1.2, 22-Apr-04  
MBR0540  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85677  
Rev. 1.2, 22-Apr-04  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号:

MBR0540-M

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FORMOSA

MBR0540-N

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FORMOSA

MBR0540-T1

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2
SENSITRON

MBR0540-TP

0.5 Amp Schottky Rectifier 20 to 80 Volts
MCC

MBR0540-TP-HF

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon,
MCC

MBR0540D87Z

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, D6, 2 PIN
FAIRCHILD

MBR0540G-CB2-R

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon,
UTC

MBR0540L

0.5 Amp Schottky Rectifier 20 to 40 Volts
MCC

MBR0540L-CA2-R

SCHOTTKY RECTIFIER DIODE
UTC

MBR0540L-CB2-R

SCHOTTKY RECTIFIER DIODE
UTC

MBR0540L-TP

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

MBR0540L-TP-HF

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC