MBR10H35/45-E3 [VISHAY]
DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode;型号: | MBR10H35/45-E3 |
厂家: | VISHAY |
描述: | DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode |
文件: | 总4页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifiers
Reverse Voltage 35 to 60 V
Forward Current 10 A
ITO-220AC (MBRF10Hxx)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
TO-220AC (MBR10Hxx)
0.110 (2.80)
0.100 (2.54)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
DIA.
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
DIA.
DIA.
0.113 (2.87)
0.103 (2.62)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
PIN
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
1
2
0.191 (4.85)
0.171 (4.35)
PIN
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.060 (1.52)
PIN 1
0.560 (14.22)
PIN 1
PIN 2
PIN 2
0.530 (13.46)
CASE
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout TO-263AB
TO-263AB (MBRB10Hxx)
0.42
(10.66)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.33
(8.38)
0.245 (6.22)
MIN
Dimensions in inches
and (millimeters)
K
0.63
(17.02)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
K
1
2
0.08
(2.032)
0-0.01 (0-0.254)
0.12
(3.05)
0.110 (2.79)
0.090 (2.29)
0.24
(6.096)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
0.205 (5.20)
0.195 (4.95)
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Document Number 88780
03-Mar-03
www.vishay.com
1
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol MBR10H35 MBR10H45 MBR10H50 MBR10H60
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
Maximum DC blocking voltage
Maximum average forward rectified current (See fig.1)
V
IF(AV)
10
20
A
Peak repetitive forward current at TC = 150 °C
(20 KHz sq. wave)
IFRM
EAS
IFSM
A
mJ
A
Non-repetitive avalanche energy
at 25 °C, IAS = 4 A, L = 10 mH
80
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
150
Peak repetitive reverse current
at tp = 2.0 µs, 1 KHZ
IRRM
ERSM
VC
1.0
20
0.5
10
A
Peak non-repetitive reverse energy (8/20 µs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
25
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +175
TSTG
–65 to +175
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics (TC = 25°C unless otherwise noted)
MBR10H35, MBR10H45 MBR10H50, MBR10H60
Parameter
Symbol
Unit
Typ
Max
Typ
Max
Maximum instantaneous
forward voltage(4)
at IF = 10 A
at IF = 10 A
at IF = 20 A
at IF = 20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ =125 °C
–
0.49
–
0.63
0.55
0.75
0.68
–
0.57
–
0.71
0.61
0.85
0.71
VF
V
0.62
0.68
Maximum instantaneous reverse current TJ = 25 °C
at rated DC blocking voltage(4)
TJ =125 °C
–
4.0
100
12
–
2.0
100
12
µA
mA
IR
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
2.0
MBRF
MBRB
2.0
Unit
°C/W
Maximum thermal resistance
RθJC
4.0
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300 µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR10H35 – MBR10H60
MBRF10H35 – MBRF10H60
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB10H35 – MBRB10H60
TO-263AB
www.vishay.com
2
Document Number 88780
03-Mar-03
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Fig. 1 – Forward Current
Derating Curve
15
175
150
125
100
75
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR, MBRB
10
MBRF
5
50
25
0
0
0
0
25
75
100
125
150
175
50
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
100
10
100
10
1
TJ = 150°C
TJ = 125°C
TJ = 150°C
TJ = 25°C
TJ = 125°C
0.1
1.0
0.1
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
0.01
0.001
0.0001
TJ = 25°C
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
0.01
0
20
40
60
80
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient
Thermal Impedance
10000
1000
100
10
TJ = 25°C
f = 1.0 MHZ
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
Vsig = 50mVp-p
1
0.1
0.01
0.1
1
10
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88780
03-Mar-03
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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