MBR20H100CT-E3/45 [VISHAY]
Dual Common-Cathode High-Voltage Schottky Rectifier; 双共阴极高压肖特基整流器
| 型号： | MBR20H100CT-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | Dual Common-Cathode High-Voltage Schottky Rectifier |
| 文件： | 总5页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR(F,B)20H90CT & MBR(F,B)20H100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
3
3
2
2
1
MBR20H90CT
MBR20H100CT
1
MBRF20H90CT
MBRF20H100CT
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
PIN 1
PIN 2
PIN 1
PIN 2
CASE
PIN 3
PIN 3
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
TYPICAL APPLICATIONS
1
MBRB20H90CT
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MBRB20H100CT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
10 A x 2
90 V, 100 V
250 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
4.5 µA
VF
0.64 V
TJ max.
175 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
MBR20H90CT
MBR20H100CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
90
90
90
100
100
100
V
V
V
VRWM
VDC
total device
per diode
20
10
Maximum average forward rectified current
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
1.0
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
A
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Document Number: 88673
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR(F,B)20H90CT & MBR(F,B)20H100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
IF = 10 A TC = 25 °C
0.77
0.64
0.88
0.73
IF = 10 A
IF = 20 A
IF = 20 A
TC = 125 °C
TC = 25 °C
TC = 125 °C
Maximum instantaneous forward voltage per diode (1)
VF
V
Maximum reverse current per diode at working peak
reverse voltage
TJ = 25 °C
TJ = 125 °C
4.5
6.0
µA
mA
IR
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
MBR
MBRF
MBRB
2.0
UNIT
Typical thermal resistance per diode
RθJC
2.0
5.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
MBR20H100CT-E3/45
1.85
1.99
1.35
1.35
1.85
1.99
1.35
1.35
45
45
45
81
45
45
45
81
MBRF20H100CT-E3/45
MBRB20H100CT-E3/45
MBRB20H100CT-E3/81
MBR20H100CTHE3/45 (1)
MBRF20H100CTHE3/45 (1)
MBRB20H100CTHE3/45 (1)
MBRB20H100CTHE3/81 (1)
50/tube
Tube
50/tube
Tube
800/reel
50/tube
Tape reel
Tube
50/tube
Tube
50/tube
Tube
800/reel
Tape reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
20
300
250
200
150
100
50
Resistive or Inductive Load
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
16
MBR
MBRB
12
8
4
MBRF
0
0
1
0
50
100
150
180
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88673
Revision: 08-Nov-07
MBR(F,B)20H90CT & MBR(F,B)20H100CT
Vishay General Semiconductor
100
10
10 000
1000
100
TJ = 175 °C
J = 150 °C
TJ = 125 °C
TJ = 100 °C
T
1
TJ = 25 °C
0.1
0.01
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
10
0.1
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1000
100
10
10
1
1
0.1
TJ = 25 °C
0.01
0.1
0.01
20
40
60
80
100
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88673
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
MBR(F,B)20H90CT & MBR(F,B)20H100CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.415 (10.54) MAX.
0.384 (9.75)
0.185 (4.70)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.148 (3.74)
7° REF.
0.113 (2.87)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.103 (2.62)
0.122 (3.08) DIA.
0.145 (3.68)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.135 (3.43)
0.580 (14.73)
PIN
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.025 (0.64)
0.104 (2.65)
0.096 (2.45)
0.020 (0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
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4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88673
Revision: 08-Nov-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
MBR20H100CT-HE3/45
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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