MBR20H100CTG-HE3/45 [VISHAY]
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | MBR20H100CTG-HE3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode |
| 文件： | 总4页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
TO-220AB
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
3
2
• High frequency operation
1
MBR20H90CTG
MBR20H100CTG
• Solder dip 260 °C, 40 s
PIN 1
PIN 3
PIN 2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
10 A x 2
MECHANICAL DATA
Case: TO-220AB
90 V, 100 V
150 A
Epoxy meets UL 94V-0 flammability rating
0.70 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
IR
3.5 µA
TJ max.
175 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR20H90CTG MBR20H100CTG
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
90
90
90
100
100
100
V
V
V
total device
per diode
20
10
Maximum average forward rectified current at TC = 155 °C
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
0.5
A
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 10 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
0.80
0.64
0.87
0.74
0.85
0.70
0.93
0.80
IF = 10 A
IF = 20 A
IF = 20 A
Maximum instantaneous forward voltage per diode(1)
VF
V
Maximum reverse current per diode at working peak
reverse voltage (1)
TJ = 25 °C
TJ = 125 °C
-
-
3.5
4.5
µA
mA
IR
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-220AB
PREFERRED P/N
MBR20H100CTG-E3/45
MBR20H100CTGHE3/45 (1)
UNIT WEIGHT (G) PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.85
1.85
45
45
Tube
Tube
50/tube
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
24
20
16
12
8
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
4
25
0
1
10
100
0
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Case Temperature (°C)
Figure 1. Forward Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88856
Revision: 25-Mar-08
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
100
10
1000
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0.1
TJ = - 40 °C
0.7
0.01
1.1
0.1
1
10
100
0.1
0.3
0.5
0.9
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
100
TJ = 150 °C
1000
TJ = 125 °C
10
100
10
TJ = 100 °C
1
1
TJ = 25 °C
0.1
0.1
0.01
0.01
20
40
60
80
100
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.635 (16.13)
0.573 (14.55)
0.625 (15.87)
PIN
2
0.350 (8.89)
1
3
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
MBR20H100CTG/45-E3
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
MBR20H100CTGHE3/45
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
MBR20H100CTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
MICROSEMI
©2020 ICPDF网 联系我们和版权申明