MBR20H150CT [VISHAY]
Dual High-Voltage Schottky Rectifiers; 双高压肖特基整流器
| 型号： | MBR20H150CT |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Schottky Rectifiers |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20H150CT, MBRF20H150CT & MBRB20H150CT-1 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual High-Voltage Schottky Rectifiers
Reverse Voltage 150V
Forward Current 20A
Max. Junction Temperature 175°C
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low leakage current, Low power loss, High efficiency
• Guardring for overvoltage protection
TO-220AB (MBR20H150CT)
0.398 (10.10)
0.185 (4.70)
0.169 (4.30)
0.382 (8.70)
0.055 (1.40)
0.047 (1.20)
0.150 (3.80)
0.139 (3.54)
0.343 (8.70) Typ.
0.055 (1.40)
0.049 (1.25)
Dia.
• For use in high frequency inverters, free wheeling, and
polarity protection applications
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
Mechanical Data
0.067
(1.70) Typ.
Case: JEDEC TO-220AB, ITO-220AB, TO-262AA
0.638 (16.20)
0.598 (15.20)
molded plastic body
0.634 (16.10)
0.618 (15.70)
0.331 (8.40) Typ.
0.370 (9.40)
0.354 (9.00)
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB,
ITO-220AB) at terminals (TO-236AB)
PIN
1
2
3
1.161 (29.48)
1.105 (28.08)
0.118
(3.00) Typ.
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
PIN 1
PIN 3
PIN 2
CASE
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
Dimensions in inches
and (millimeters)
ITO-220AB (MBRF20H150CT)
TO-262AA (MBRB20H150CT-1)
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
1.21 (3.08)
0.108 (2.74)
0.092 (2.34)
Dia.
0.185 (4.70)
0.169 (4.30)
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
0.138 (3.50)
0.122 (3.10)
0.055 (1.40)
0.049 (1.25)
K
0.141 (3.58)
0.125 (3.18)
0.633 (16.07)
0.601 (15.67)
0.425 (10.80)
0.393 (10.00)
0.370 (9.40)
0.354 (9.00)
0.630 (16.00)
0.614 (15.60)
0.370 (9.39)
0.354 (8.99)
PIN
2
0.488 (12.4)
0.472 (12.00)
1
3
PIN
2
1
3
0.102 (2.60)
0.087 (2.20)
1.164 (29.55)
1.108 (28.15)
0.117 (2.96)
0.101 (2.56)
0.523 (13.28)
0.507 (12.88)
PIN 1
PIN 3
0.405 (10.28)
0.389 (9.88)
PIN 2
0.531 (13.48)
0.396 (10.05)
0.372 (9.45)
0.035 (0.90)
0.507 (12.88)
CASE
0.028 (0.70)
0.039 (1.00)
0.024 (0.60)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.100
(2.54) Typ.
0.018 (0.45)
0.058 (1.47) Typ.
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) Typ.
0.100
(2.54) Typ.
PIN 1
PIN 3
PIN 2
CASE
Document Number 88864
24-Dec-03
www.vishay.com
1
MBR20H150CT, MBRF20H150CT & MBRB20H150CT-1 Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VDC
MBR20H150CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
150
150
150
V
V
Total device
Per leg
20
10
Maximum average forward rectified current
IF(AV)
A
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
IFSM
200
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ
IRRM
1.0
10
A
Peak non-repetitive reverse surge energy per leg
(8/20µs waveform)
ERSM
mJ
Non-repetitive avalanche energy per leg
at 25°C, IAS = 1.5A, L=10mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10,000
V/µs
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
4500 (1)
3500 (2)
1500 (3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1 second, RH ≤ 30%
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
IF = 10A, TC = 25°C
0.90
0.75
0.99
0.86
forward voltage per leg at(4): IF = 10A, TC = 125°C
IF = 20A, TC = 25°C
VF
V
IF = 20A, TC = 125°C
Maximum reverse current per leg
at working peak reverse voltage
TJ = 25°C
TJ = 125°C
5.0
1.0
µA
mA
IR
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance per leg
R
2.2
4.2
2.2
°C/W
ΘJC
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88864
24-Dec-03
MBR20H150CT, MBRF20H150CT & MBRB20H150CT-1 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
(Total)
30
200
240
220
200
180
160
140
120
100
80
TJ = TJmax
8.3ms single half-wave
(JEDEC Method)
25
MBR, MBRB
20
MBRF
15
10
60
5
0
40
20
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse
Characteristics Per Leg
10,000
1,000
100
100
TJ = 175°C
TJ = 175°C
10
1
TJ = 125°C
TJ = 125°C
10
TJ = 75°C
TJ = 75°C
1
0.1
TJ = 25°C
TJ = 25°C
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10
20
30
40
50
60
70
80
90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
100
10
1
10000
1000
100
MBRF
MBR, MBRB
0.1
10
0.1
1
10
100
0.01
0.1
1
10
100
t -- Pulse Duration (sec.)
Reverse Voltage (V)
Document Number 88864
24-Dec-03
www.vishay.com
3
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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