MBR2535CT-N3 [VISHAY]
Schottky Rectifier, 2 x 15 A; 肖特基整流器, 2× 15 A型号: | MBR2535CT-N3 |
厂家: | VISHAY |
描述: | Schottky Rectifier, 2 x 15 A |
文件: | 总7页 (文件大小:168K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
Base
common
cathode
2
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Anode
Anode
2
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package
TO-220AB
2 x 15 A
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
IF(AV)
VR
35 V, 45 V
DESCRIPTION
VF at IF
See Electrical table
40 mA at 125 °C
150 °C
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
I
RM max.
TJ max.
Diode variation
EAS
Common cathode
16 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFRM
IFSM
CHARACTERISTICS
VALUES
30
UNITS
Rectangular waveform (per device)
A
V
35/45
30
TC = 130 °C (per leg)
tp = 5 μs sine
A
1060
VF
30 Apk, TJ = 125 °C
Range
0.73
V
TJ
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-MBR2535CTPbF VS-MBR2535CT-N3 VS-MBR2545CTPbF VS-MBR2545CT-N3 UNITS
Maximum DC reverse
voltage
VR
35
35
45
45
V
Maximumworkingpeak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
per leg
15
30
30
Maximum average
forward current
IF(AV)
TC = 130 °C, rated VR
per device
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz, TC = 130 °C
Following any rated load
A
5 µs sine or 3 µs rect. pulse condition and with rated VRRM
1060
applied
Non-repetitive peak surge current
IFSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 2 A, L = 8 mH
16
2
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Revision: 30-Aug-11
Document Number: 94291
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
VALUES
0.82
0.73
0.2
UNITS
(1)
Maximum forward voltage drop
VFM
30 A
V
TJ = 125 °C
TJ = 25 °C
(1)
Maximum instantaneous reverse current
IRM
Rated DC voltage
mA
TJ = 125 °C
40
Threshold voltage
VF(TO)
rt
0.355
12.3
700
V
TJ = TJ maximum
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
m
pF
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
LS
8.0
nH
dV/dt
10 000
V/µs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
UNITS
Maximum junction temperature range
Maximum storage temperature range
TJ
°C
TStg
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
1.5
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Non-lubricated threads
Case style TO-220AB
MBR2535CT
MBR2545CT
Revision: 30-Aug-11
Document Number: 94291
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
100
10
1
100
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
TJ = 50 °C
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
0.01
0.001
0.0001
TJ = 25 °C
0
5
10 15 20 25 30 35 40 45
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1
0.1
t2
Notes:
Single pulse
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 30-Aug-11
Document Number: 94291
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
14
12
10
8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
Rated VR applied
RMS limit
6
4
DC
2
See note (1)
0
0
5
10
15
20
25
0
4
8
12
16
20
24
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 30-Aug-11
Document Number: 94291
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR 25
45
CT PbF
1
2
3
4
5
6
-
Vishay Semiconductors product
Schottky MBR series
Current rating (30 A)
Voltage ratings
1
2
3
4
5
6
-
-
-
-
35 = 35 V
45 = 45 V
CT = Essential part number
Environmental digit
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-MBR2535CTPbF
VS-MBR2535CT-N3
VS-MBR2545CTPbF
VS-MBR2545CT-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
50
50
1000
1000
1000
1000
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
TO-220AB PbF
TO-220AB -N3
Part marking information
Revision: 30-Aug-11
Document Number: 94291
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
B
Seating
plane
A
A
(6)
Thermal pad
E
Ø P
0.014 B A
A
(E)
M
M
(7)
E2
A1
1
3
Q
2
D
D
C
(6)
(H1)
H1
(2)
L1
(7)
C
(6)
D2
D
Detail B
(6)
D1
3 x b
3 x b2
1
3
2
Detail B
C
E1 (6)
L
(b, b2)
b1, b3
Base metal
Plating
View A - A
c1
(4)
c
c
A
2 x e
e1
(4)
A2
Section C - C and D - D
M
M
0.015 B A
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.398
0.270
-
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
MIN.
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
MAX.
0.183
MIN.
10.11
6.86
-
MAX.
10.51
8.89
0.76
2.67
5.28
6.48
14.02
3.82
3.73
3.00
MAX.
0.414
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.147
0.118
A
A1
A2
b
E
E1
E2
e
3, 6
6
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
7
2.41
4.88
6.09
13.52
3.32
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.139
0.102
b1
b2
b3
c
c1
D
4
4
e1
H1
L
6, 7
2
L1
Ø P
Q
4
3
D1
D2
90° to 93°
90° to 93°
6
Notes
(1)
(2)
(3)
(7)
(8)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
(4)
(5)
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
相关型号:
MBR2535CT/45-E3
DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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