MBR2560CT-E3 [VISHAY]
DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | MBR2560CT-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifier
Reverse Voltage 35 to 60A
Forward Current 30A
ITO-220AB (MBRF25xxCT)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
TO-220AB (MBR25xxCT)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.113 (2.87)
0.103 (2.62)
3
1
0.145 (3.68)
0.135 (3.43)
0.191 (4.85)
0.171 (4.35)
0.603 (15.32)
0.573 (14.55)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.060 (1.52)
PIN 1
0.635 (16.13)
0.625 (15.87)
PIN 2
PIN
1
2
3
1.148 (29.16)
1.118 (28.40)
PIN 3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.560 (14.22)
PIN 1
PIN 3
PIN 2
CASE
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
TO-263AB (MBRB25xxCT)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.36)
0.104 (2.65)
0.096 (2.45)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
K
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
K
1
Dimensions in inches
and (millimeters)
2
0.33
(8.38)
0-0.01 (0-0.254)
0.63
(17.02)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.027 (0.686)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.08
0.205 (5.20)
0.195 (4.95)
(2.032)
0.12
(3.05)
0.24
(6.096)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
• High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
• Rated for reverse surge and ESD
Document Number 88675
03-Oct-02
www.vishay.com
1
MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
Maximum DC blocking voltage
V
Maximum average forward rectified current Total device
30
15
IF(AV)
IFRM
A
A
at TC = 130°C
Per leg
Peak repetitive forward current per leg at TC = 130°C
(rated VR, square wave, 20 KHZ)
30
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
IFSM
150
A
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20µs waveform)
ERSM
25
25
mJ
Electrostatic discharge capacitor voltage
Human body model: c = 100pF, R = 1.5kΩ
VC
kV
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +150
–65 to +175
TSTG
°C
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
4500(1)
3500(2)
1500(3)
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Unit
at IF = 15A, TC = 25°C
at IF = 15A, TC = 125°C
at IF = 30A, TC = 25°C
at IF = 30A, TC = 125°C
–
–
0.82
0.73
0.75
0.65
–
Maximum instantaneous
forward voltage per leg(4)
VF
V
–
Maximum instantaneous reverse currentTC = 25°C
at rated DC blocking voltage per leg (Note 4)TC = 125°C
0.2
40
1.0
50
IR
mA
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
1.5
MBRF
MBRB
1.5
Unit
Typical thermal resistance from junction to case per leg
RΘJC
4.5
ºC/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR2535CT - MBR2560CT
MBRF2535CT - MBRF2560CT
TO-220AB
ITO-220AB
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB2535CT - MBRB2560CT
TO-263AB
www.vishay.com
2
Document Number 88675
03-Oct-02
MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Forward Current Derating Curve
30
150
125
100
75
Resistive or Inductive Load
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
24
18
12
50
25
0
6
0
50
150
0
100
1
10
100
Number of Cycles at 60 HZ
Case Temperature (°C)
Typical Instantaneous
Forward Characteristics Per Leg
Typical Reverse Characteristics Per Leg
50
10
50
10
MBR2535CT – MBR2545CT
MBR2550CT & MBR2560CT
TJ = 150°C
TJ = 125°C
Pulse Width = 300µs
1% Duty Cycle
1.0
0.1
1.0
0.1
TJ = 25°C
75°C
0.01
0.001
MBR2535CT – MBR2545CT
MBR2550CT & MBR2560CT
25°C
0.01
0
20
40
60
80
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Typical Transient
Thermal Impedance Per Leg
Typical Junction Capacitance Per Leg
100
10
1
5,000
1,000
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
MBR2535CT – MBR2545CT
MBR2550CT & MBR2560CT
0.1
100
0.1
1
10
0.1
1
10
0.01
100
100
t – Pulse Duration (sec.)
Reverse Voltage (V)
Document Number 88675
03-Oct-02
www.vishay.com
3
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