MBRB1090-E3/4W [VISHAY]
DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | MBRB1090-E3/4W |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 功效 瞄准线 二极管 |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRB1090-M3, MBRB10100-M3
www.vishay.com
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-263AB
• Lower power losses, high efficiency
• Low forward voltage drop
K
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
2
1
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MBRB1090
MBRB10100
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
HEATSINK
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
PRIMARY CHARACTERISTICS
Package
TO-263AB
10 A
MECHANICAL DATA
IF(AV)
Case: TO-263AB
VRRM
90 V, 100 V
150 A
Molding compound meets UL 94 V-0 flammability rating
IFSM
VF
0.65 V
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
TJ max.
Diode variation
150 °C
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
MBRB1090
MBRB10100
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
90
90
90
100
100
100
V
V
V
A
VRWM
VDC
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
150
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MAX.
0.80
0.65
0.75
100
UNIT
IF = 10 A
TC = 25 °C
TC = 125 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
Maximum instantaneous
forward voltage
IF = 10 A
IF = 20 A
VF
V
(1)
μA
Maximum reverse current per at working
peak reverse voltage (2)
IR
6.0
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 15-May-13
Document Number: 87981
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB1090-M3, MBRB10100-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB
60
UNIT
RJA
Typical thermal resistance
°C/W
RJC
2.0
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
MBRB10100CT-M3/4W
MBRB10100CT-M3/8W
UNIT WEIGHT (g)
1.384
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
4W
8W
1.384
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
100
10
Resistive or Inductive Load
TJ = 150 °C
8
6
4
2
0
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
50
Case Temperature (°C)
150
0
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
100
160
140
120
100
80
TJ = 150 °C
TJ = TJ max.
8.3 ms Single Half Sine-Wave
10
TJ = 125 °C
1
0.1
0.01
60
TJ = 25 °C
0.001
40
10
10
20
30
40
50
60
80
100
1
100
70
90
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 15-May-13
Document Number: 87981
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB1090-M3, MBRB10100-M3
www.vishay.com
Vishay General Semiconductor
10 000
1000
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
10
1
10
0.1
0.01
1
100
100
10
0.1
1
10
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
K
1
0.591(15.00)
2
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
Revision: 15-May-13
Document Number: 87981
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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