MBRB10H100/45-E3 [VISHAY]
DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | MBRB10H100/45-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10H100, MBRF10H100 & MBRB10H100
New Product
Vishay Semiconductors
formerly General Semiconductor
High Voltage Schottky Rectifiers
Reverse Voltage 90 to 100V
Forward Current 10A
Maximum Junction Temperature 175°C
ITO-220AC (MBRF10H90, MBRF10H100)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AC (MBR10H90, MBR10H100)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
DIA.
DIA.
0.154 (3.91)
DIA.
0.370 (9.40)
0.055 (1.39)
0.045 (1.14)
0.148 (3.74)
0.360 (9.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
1
2
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
PIN
0.060 (1.52)
PIN 1
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
PIN 2
0.560 (14.22)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
PIN 1
PIN 2
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
CASE
0.105 (2.67)
TO-263AB (MBRB10H90, MBRB10H100)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
K
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.33
(8.38)
0.624 (15.85)
0.591 (15.00)
K
1
2
Dimensions in inches
and (millimeters)
0.63
(17.02)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.08
0.140 (3.56)
0.110 (2.79)
(2.032)
0.12
0.205 (5.20)
0.195 (4.95)
(3.05)
0.24
(6.096)
Features
Mechanical Data
• Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
(TO-220AC & ITO-220AC) at terminals (TO-263AB)
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Packaging Codes: see next page
Document Number 88667
03-Oct-02
www.vishay.com
1
MBR10H100, MBRF10H100 & MBRB10H100
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VDC
MBR10H90
MBR10H100
100
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
90
90
90
100
V
100
V
IF(AV)
10
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
250
A
Peak repetitive reverse current at tp = 2µs, 1KHZ
Voltage rate of change (rated VR)
IRRM
dv/dt
0.5
A
10,000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals to
heatsink with t = 1 second, RH ≤ 30%
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
forward voltage at(4):
IF = 10A, TC = 25°C
IF = 10A, TC = 125°C
IF = 20A, TC = 25°C
IF = 20A, TC = 125°C
0.77
0.64
0.88
0.73
VF
V
Maximum reverse current
TJ = 25°C
TJ = 125°C
4.5
6.0
µA
mA
IR
at working peak reverse voltage(4)
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance
RθJC
2.7
5.8
2.7
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR10H90 - MBR10H100
MBRF10H90 - MBRF10H100
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB10H90 - MBRB10H100
TO-263AB
www.vishay.com
2
Document Number 88667
03-Oct-02
MBR10H100, MBRF10H100 & MBRB10H100
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 2 — Maximum Non-Repetitive Peak
Forward Surge Current
Fig. 1 — Forward Current Derating Curve
20
300
250
200
150
16
MBR
MBRB
12
8
100
50
0
4
0
MBRF
50
150
0
100
180
1
10
100
Fig. 3 — Typical Instantaneous
Forward Characteristics
Fig. 4 — Typical Reverse Characteristics
100
10
10000
TJ = 150°C
TJ = 125°C
TJ = 100°C
1000
100
10
TJ = 175°C
TJ = 125°C
TJ=150°C
TJ = 100°C
1.0
1.0
0.1
TJ = 25°C
0.1
TJ = 25°C
0.01
0.01
1.0
20
40
60
80
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.8 0.9
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
10000
1000
100
10
1
100
10
0.1
0.1
1
0.01
10
1
10
0.1
100
Document Number 88667
03-Oct-02
www.vishay.com
3
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