MBRB1545CTHE3_B/P [VISHAY]
Rectifier Diode,;
| 型号： | MBRB1545CTHE3_B/P |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF15xxCT, MBRB15xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
D2PAK (TO-263AB)
ITO-220AB
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
K
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for D2PAK (TO-263AB)) package
3
2
1
MBRF15xxCT
MBRB15xxCT
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AB package)
PIN 1
K
PIN 1
PIN 2
• AEC-Q101 qualified
PIN 2
HEATSINK
PIN 3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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DESIGN SUPPORT TOOLS
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
Models
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: ITO-220AB, D2PAK (TO-263AB)
IF(AV)
VRRM
IFSM
2 x 7.5 A
45 V, 60 V
150 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B,...)
VF
TJ max.
0.57 V, 0.65 V
150 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Package
ITO-220AB, D2PAK (TO-263AB)
Common cathode
Circuit configuration
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBRB1545CT
MBRB1560CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
45
45
45
60
60
60
V
Maximum DC blocking voltage
total device
Maximum average forward rectified current at TC = 105 °C
per diode
15
IF(AV)
IFSM
7.5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
150
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
TJ
1.0
0.5
10 000
-65 to +150
-65 to +175
1500
V/μs
°C
Operating junction temperature range
Storage temperature range
TSTG
VAC
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
V
Revision: 13-Sep-2018
Document Number: 88670
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF15xxCT, MBRB15xxCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MBRB1545CT
MBRB1560CT
UNIT
IF = 7.5 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
-
0.75
0.65
-
IF = 7.5 A
IF = 15 A
IF = 15 A
0.57
0.84
0.72
0.1
Maximum instantaneous forward voltage
per diode
(1)
VF
V
-
1.0
50
Maximum instantaneous reverse current
at DC blocking voltage per diode
(2)
IR
Rated VR
mA
T
C = 125 °C
15
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF
MBRB
60
UNIT
RJA
-
Maximum thermal resistance per diode
°C/W
RJC
5.0
3.0
ORDERING INFORMATION (Example)
PACKAGE
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE BASE QUANTITY DELIVERY MODE
MBRF1545CT-E3/45
1.99
1.35
1.35
1.99
1.35
1.35
45
45
81
P
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
Tube
Tube
MBRB1545CT-E3/45
MBRB1545CT-E3/81
MBRF1545CTHE3_A/P (1)
MBRB1545CTHE3_B/P (1)
MBRB1545CTHE3_B/I (1)
Tape and reel
Tube
P
Tube
I
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 13-Sep-2018
Document Number: 88670
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF15xxCT, MBRB15xxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
25
20
15
10
5
100
10
MBRB1545CT
MBRB1560CT
Resistive or Inductive Load
TJ = 125 °C
1
0.1
0.01
TJ = 75 °C
T
J = 25 °C
80
100
0
0.001
60
0
20
40
0
50
100
150
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
175
150
125
100
75
10 000
TJ = 25 °C
f = 1.0 MHz
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
V
sig = 50 mVp-p
1000
100
10
50
MBRB1545CT
MBRB1560CT
25
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
10
10
TJ = 125 °C
Pulse width = 300 µs
1 % duty cycle
TJ = 25 °C
1
1
0.1
MBRB1545CT
MBRB1560CT
0.1
0.01
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
0
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Sep-2018
Document Number: 88670
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF15xxCT, MBRB15xxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.076 (1.93) REF.
0.110 (2.79)
0.100 (2.54)
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
2
1
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
1
K
2
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 13-Sep-2018
Document Number: 88670
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
1
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