MBRB15H60CT/45 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 60V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3;
| 型号： | MBRB15H60CT/45 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 60V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 功效 瞄准线 二极管 |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR15HxxCT, MBRF15HxxCT & MBRB15HxxCT Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifiers
Reverse Voltage 35 to 60 V
Forward Current 15 A
ITO-220AB (MBRF15HxxCT)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AB (MBR15HxxCT)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
2
3
1
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
1
3
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
PIN 2
0.110 (2.79)
0.100 (2.54)
PIN 3
0.560 (14.22)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 3
PIN 2
CASE
0.530 (13.46)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.36)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout TO-263AB
0.42
(10.66)
TO-263AB (MBRB15HxxCT)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
0.33
(8.38)
Dimensions in inches
and (millimeters)
0.245 (6.22)
MIN
0.63
(17.02)
K
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
K
1
0.08
2
(2.032)
0.12
(3.05)
0-0.01 (0-0.254)
0.24
0.110 (2.79)
0.090 (2.29)
(6.096)
0.037 (0.940)
0.027 (0.686)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Document Number 88782
4-Feb-03
www.vishay.com
1
MBR15HxxCT, MBRF15HxxCT & MBRB15HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
V
Max.average forward rectified current
(see figure 1)
Total device
Per leg
15
7.5
IF(AV)
IFRM
EAS
A
A
Peak repetitive forward current at TC = 155 °C per leg
(rated VR, 20 KHz sq. wave)
15
80
Non-repetitive avalanche energy per leg
at 25 °C, IAS = 4A, L = 10 mH
mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
150
A
Peak repetitive reverse surge current per leg
at tp = 2.0 µs, 1 KHZ
IRRM
ERSM
VC
1.0
20
0.5
10
A
Peak non-repetitive reverse energy (8/20 µs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 kΩ
25
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +175
TSTG
–65 to +175
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics (TC = 25 °C unless otherwise noted)
MBR15H35CT, MBR15H45CT MBR15H50CT, MBR15H60CT
Parameter
Symbol
Unit
Typ
Max
Typ
Max
Maximum instantaneous
forward voltage per leg(4)
at IF = 7.5 A TJ = 25 °C
at IF = 7.5 A TJ = 125 °C
–
0.50
–
0.63
0.55
0.75
0.66
–
0.58
–
0.73
0.61
0.87
0.72
VF
V
at IF = 15 A
at IF = 15 A
TJ = 25 °C
TJ =125 °C
0.61
0.68
Maximum instantaneous reverse current TJ = 25 °C
at rated DC blocking voltage per leg(4)
TJ =125 °C
–
3.0
50
10
–
2.0
50
10
µA
mA
IR
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
3.0
MBRF
MBRB
3.0
Unit
°C/W
Maximum thermal resistance per leg
RθJC
5.0
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300 µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR15H35CT – MBR15H60CT
MBRF15H35CT – MBRF15H60CT
TO-220AB
ITO-220AB
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB15H35CT – MBRB15H60CT
TO-263AB
www.vishay.com
2
Document Number 88782
4-Feb-03
MBR15HxxCT, MBRF15HxxCT & MBRB15HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Fig. 1 – Forward Current
Derating Curve
Peak Forward Surge Current Per Leg
20
175
150
125
100
75
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR, MBRB
15
MBRF
10
5
0
50
25
0
25
75
100
125
150
175
50
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse
Characteristics Per Leg
100
10
10
1
TJ = 150°C
TJ = 125°C
0.1
TJ = 150°C
TJ = 25°C
TJ = 125°C
1
0.1
0.01
0.001
0.0001
MBR15H35CT -- MBR15H45CT
MBR15H50CT -- MBR15H60CT
TJ = 25°C
MBR15H35CT -- MBR15H45CT
MBR15H50CT -- MBR15H60CT
0.01
0
20
40
60
80
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
1000
100
10
1000
100
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
MBR15H35CT -- MBR15H45CT
MBR15H50CT -- MBR15H60CT
1
0.01
0.1
1
10
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88782
4-Feb-03
www.vishay.com
3
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