MBRB20100CT-E3/45 [VISHAY]
Rectifier Diode, Schottky, 10A, 100V V(RRM),;型号: | MBRB20100CT-E3/45 |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 10A, 100V V(RRM), 二极管 |
文件: | 总5页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
3
2
2
1
MBR2090CT
MBR20100CT
PIN 1
1
MBRF2090CT
MBRF20100CT
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
PIN 2
CASE
PIN 1
PIN 2
PIN 3
PIN 3
• Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
TYPICAL APPLICATIONS
MBRB2090CT
MBRB20100CT
For use in high frequency rectifier of switching
mode power supplies, free-wheeling diodes, dc-to-dc
converters or polarity protection application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
10 A x 2
90 V, 100 V
150 A
E3 suffix for commercial grade
VF
0.65 V
Polarity: As marked
Tj max
150 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
VRRM
MBR2090CT MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
90
90
90
100
100
100
V
V
V
VRWM
VDC
Total device
Maximum average forward rectified current at TC = 133 °C
per diode
20
10
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dv/dt
0.5
A
10000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
Document Number: 88672
Revision: 03-Apr-07
www.vishay.com
1
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
IF = 10 A, TC = 25 °C
0.80
0.65
0.95
0.75
IF = 10 A,
IF = 20 A,
IF = 20 A,
T
T
T
C = 125 °C
C = 25 °C
C = 125 °C
Maximum instantaneous forward voltage per diode (1)
VF
V
Maximum reverse current per diode at working peak
reverse voltage (1)
Tj = 25 °C
Tj = 100 °C
100
6.0
µA
mA
IR
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJA
RθJC
60
2.0
-
60
2.0
Typical thermal resistance per diode
°C/W
3.5
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
MBR20100CT-E3/45
MBRF20100CT-E3/45
MBRB20100CT-E3/45
MBRB20100CT-E3/81
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/Tube
DELIVERY MODE
Tube
1.85
1.99
1.35
1.35
45
45
45
81
50/Tube
Tube
50/Tube
Tube
800/Reel
Tape Reel
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
20
160
140
120
100
80
Resistive or Inductive Load
Tj = Tj max.
8.3 ms Single Half Sine-Wave
16
12
8
4
60
40
1
0
10
50
150
100
0
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
Document Number: 88672
Revision: 03-Apr-07
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
50
100
10
1
20
10
Tj = 150 °C
Tj = 100 °C
5.0
3.0
Tj = 25 °C
1.0
0.5
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Transient Thermal Impedance Per Diode
Tj
= 150 °C
10
1.0
T
j = 125 °C
Tj = 100 °C
0.1
Tj = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Document Number: 88672
Revision: 03-Apr-07
www.vishay.com
3
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
See note
0.404(10.26)
0.384(9.75)
0.415 (10.54) MAX.
0.190(4.83)
0.170(4.32)
See note
(4.70)
0.185
0.175 (4.44)
0.076Ref.
(1.93)ref.
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.110(2.79)
0.100(2.54)
0.076Ref.
(1.93)
Ref.
(1.39)
0.045 (1.14)
0.055
7°Ref.
0.113 (2.87)
0.103 (2.62)
45°Ref.
0.140(3.56)DIA.
0.125(3.17)DIA.
0.135(3.43)DIA.
0.122(3.08)DIA.
0.671(17.04)
0.651(16.54)
0.600(15.24)
0.580(14.73)
0.145 (3.68)
0.135 (3.43)
PIN
7°Ref.
0.635 (16.13)
0.603 (15.32)
0.573 (14.55)
0.350(8.89)
0.330(8.38)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
PIN
3
1
2
2
3
1
0.160 (4.06)
0.140 (3.56)
0.191(4.85)
0.171(4.35)
7°Ref.
1.148 (29.16)
1.118 (28.40)
0.560(14.22)
0.530(13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057(1.45)
0.045(1.14)
0.080(2.03)
0.065(1.65)
0.110(2.79)
0.100(2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.035(0.89)
0.025(0.64)
0.025(0.64)
0.015(0.38)
0.105(2.67)
0.095(2.41)
0.104 (2.65)
0.096 (2.45)
0.028 (0.71)
0.020(0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.205(5.21)
0.195(4.95)
Note: Copper exposure is allowable for 0.005 (0.13) max. from the body
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
(10.66)
0.245 (6.22)
MIN
MIN.
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
0.591(15.00)
2
0.670 (17.02)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
www.vishay.com
4
Document Number: 88672
Revision: 03-Apr-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号:
MBRB20100CT-GT4
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, GREEN, PLASTIC, D2PAK-3
SENSITRON
MBRB20100CT-T4
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, PLASTIC, D2PAK-3
SENSITRON
MBRB20100CT-TP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, D2PACK-3/2
MCC
MBRB20100CT1
SWITCHMODE⑩ Schottky Power Rectifier D2PAK-SL Straight-Leaded Through Hole Mount Package
MOTOROLA
©2020 ICPDF网 联系我们和版权申明