MBRB20H90CTG-E3/45 [VISHAY]

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;


型号：	MBRB20H90CTG-E3/45
厂家：	VISHAY
描述：	DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
文件：	总5页 (文件大小：149K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR(F,B)20H90CTG thru MBR(F,B)20H100CTG

Vishay General Semiconductor

Dual Common-Cathode High-Voltage Schottky Rectifier

High Barrier Technology for improved high temperature performance

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

MBR20H90CTG

MBR20H100CTG

MBRF20H90CTG

MBRF20H100CTG

• Meets MSL level 1, per J-STD-020C, LF max peak

of 245 °C (for TO-263AB package)

PIN 1

PIN 2

PIN 1

PIN 2

CASE

PIN 3

• Solder Dip 260 °C, 40 seconds (for TO-220AB &

ITO-220AB package)

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

MBRB20H90CTG

MBRB20H100CTG

For use in high frequency rectifier of switching

mode power supplies, free-wheeling diodes, dc-to-dc

converters or polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

V_F

10 A x 2

90 V, 100 V

150 A

0.70 V

I_R

3.5 µA

Polarity: As marked

T_jmax

175 °C

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR20H90CTG MBR20H100CTG

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

100

V_RWM

V_DC

Total device

Maximum average forward rectified current at T_C= 155 °C

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

150

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dv/dt

0.5

10000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 minute

V_AC

1500

Document Number 88856

18-Aug-06

www.vishay.com

MBR(F,B)20H90CTG thru MBR(F,B)20H100CTG

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP. VALUE

MAX. VALUE

UNIT

at I_F= 10 A, T_j= 25 °C

Maximum instantaneous forward voltage per diode at I_F= 10 A, T_j= 125 °C

0.80

0.64

0.87

0.74

0.85

0.70

0.93

0.80

V_F

(1)

at I_F= 20 A, T_j= 25 °C

at I_F= 20 A, T_j= 125 °C

Maximum reverse current per diode at working

peak reverse voltage ⁽¹⁾

T_j= 25 °C

T_j= 125 °C

3.5

4.5

µA

I_R

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

5.8

MBRB

UNIT

Typical thermal resistance per diode

R_θJC

2.0

°C/W

ORDERING INFORMATION

PACKAGE

TO-220AB

ITO-220AB

TO-263AB

PREFERRED P/N

MBR20H100CTG-E3/45

MBRF20H100CTG-E3/45

MBRB20H100CTG-E3/45

MBRB20H100CTG-E3/81

UNIT WEIGHT (G) PACKAGE CODE

BASE QUANTITY

50/Tube

DELIVERY MODE

Tube

1.85

1.99

1.35

50/Tube

Tube

50/Tube

Tube

800/Reel

Tape Reel

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

175

Tj = Tj max.

8.3 ms Single Half Sine-Wave

150

125

MBR

MBRB

100

MBRF

125

100

150

175

100

Number of Cycles at 60 Hz

Case Temperature (°C)

Figure 1. Forward Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

Document Number 88856

18-Aug-06

MBR(F,B)20H90CTG thru MBR(F,B)20H100CTG

Vishay General Semiconductor

1000

100

Tj = 175 °C

Tj = 150 °C

1.0

100

Tj = 125 °C

= 100 °C

0.1

Tj = 25 °C

= - 40 °C

0.7

0.01

0.1

100

1.1

0.1

0.3

0.5

0.9

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

10000

T^j= 150 °C

1000

T^j= 125 °C

100

Tj = 100 °C

T^j= 25 °C

0.1

0.01

0.1

0.01

100

t - Pulse Duration (s)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

Document Number 88856

18-Aug-06

www.vishay.com

MBR(F,B)20H90CTG thru MBR(F,B)20H100CTG

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

ITO-220AB

See note

0.404(10.26)

0.384(9.75)

0.190(4.83)

0.170(4.32)

0.415 (10.54) MAX.

See note

0.076Ref.

(1.93)ref.

(4.70)

0.185

0.175 (4.44)

0.154 (3.91)

0.148 (3.74)

0.110(2.79)

0.100(2.54)

0.370 (9.40)

0.360 (9.14)

0.076Ref.

(1.93)

Ref.

7°Ref.

(1.39)

0.045 (1.14)

0.055

45°Ref.

0.113 (2.87)

0.103 (2.62)

0.140(3.56)DIA.

0.125(3.17)DIA.

0.135(3.43)DIA.

0.122(3.08)DIA.

0.671(17.04)

0.651(16.54)

0.600(15.24)

0.580(14.73)

0.145 (3.68)

0.135 (3.43)

7°Ref.

0.635 (16.13)

0.625 (15.87)

0.603 (15.32)

0.573 (14.55)

0.350(8.89)

0.330(8.38)

0.350 (8.89)

0.330 (8.38)

0.191(4.85)

0.171(4.35)

7°Ref.

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.560(14.22)

0.530(13.46)

0.110 (2.79)

0.100 (2.54)

0.057(1.45)

0.045(1.14)

0.057 (1.45)

0.045 (1.14)

0.080(2.03)

0.065(1.65)

0.110(2.79)

0.100(2.54)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035(0.89)

0.025(0.64)

0.035 (0.90)

0.028 (0.70)

0.025(0.64)

0.015(0.38)

0.105(2.67)

0.095(2.41)

0.104 (2.65)

0.096 (2.45)

0.028 (0.71)

0.020(0.51)

0.022 (0.56)

0.014 (0.36)

0.205 (5.20)

0.195 (4.95)

0.205(5.21)

0.195(4.95)

Note:Copperexposure is allowablefor 0.005(0.13)Max. from the body

TO-263AB

0.41 (10.45)

0.380 (9.65)

0.190 (4.83)

0.160 (4.06)

Mounting Pad Layout

0.055 (1.40)

0.045 (1.14)

0.42

MIN.

0.245 (6.22)

MIN

(10.66)

0.33

(8.38)

0.055 (1.40)

0.047 (1.19)

MIN.

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.591(15.00)

0.670 (17.02)

0.591 (15.00)

0-0.01 (0-0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15

(3.81)

0.037 (0.940)

0.027 (0.686)

MIN.

0.08

MIN.

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

(2.032)

0.205 (5.20)

0.195 (4.95)

0.105 (2.67)

(0.095) (2.41)

www.vishay.com

Document Number 88856

18-Aug-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

MBRB20H90CTG-E3/45 [VISHAY]

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