MBRB2545CT-E3/31 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | MBRB2545CT-E3/31 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 功效 瞄准线 二极管 |
| 文件： | 总5页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
3
2
2
1
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
1
MBR25xxCT
MBRF25xxCT
PIN 1
PIN 2
CASE
PIN 1
PIN 2
• Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
PIN 3
PIN 3
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
TYPICAL APPLICATIONS
1
For use in low voltage, high frequency rectifier of
switching mode power supplies, free-wheeling diodes,
dc-to-dc converters or polarity protection application.
MBRB25xxCT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
15 A x 2
35 V to 60 V
150 A
VF
0.73 V at 30 A, 0.65 V at 15 A
150 °C
Tj max
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
A
Maximum DC blocking voltage
Maximum average forward rectified current Total device
at TC = 130 °C
30
15
IF(AV)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2 µs, 1 kHz
IRRM
ERSM
1.0
0.5
Peak non-repetitive reverse energy (8/20 µs waveform)
per diode
25
mJ
Electrostatic discharge capacitor voltage Human body
model: c = 100 pF, R = 1.5 kΩ
VC
25
kV
Voltage rate of change (rated VR)
dv/dt
10000
V/µs
Document Number 88675
22-Aug-06
www.vishay.com
1
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Operating junction temperature range
Storage temperature range
TJ
- 65 to + 150
- 65 to + 175
°C
V
TSTG
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
at IF = 15 A,
at IF = 15 A,
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
-
-
0.75
0.65
-
-
Maximum instantaneous
VF
V
forward voltage per diode (1) at IF = 30 A,
at IF = 30 A,
0.82
0.73
Maximum instantaneous
reverse current at blocking
voltage per diode (1)
TC = 25 °C
C = 125 °C
0.2
40
1.0
50
IR
mA
T
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR
MBRF
MBRB
1.5
UNIT
Typical thermal resistance from junction to case per diode
RθJC
1.5
4.5
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
MBR2545CT-E3/45
MBRF2545CT-E3/45
MBRB2545CT-E3/45
MBRB2545CT-E3/81
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/Tube
DELIVERY MODE
Tube
1.85
1.99
1.35
1.35
45
45
45
81
50/Tube
Tube
50/Tube
Tube
800/Reel
Tape Reel
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2
Document Number 88675
22-Aug-06
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
30
50
10
Resistive or Inductive Load
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
24
Tj = 125 °C
1.0
0.1
18
Tj = 75 °C
12
6
0
0.01
0.001
Tj = 25 °C
0
100
Case Temperature (°C)
50
150
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
150
125
100
75
5000
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Tj = Tj max.
8.3 ms Single Half Sine-Wave
1000
50
25
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
100
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Typical Junction Capacitance Per Diode
50
100
Tj = 150 °C
10
1.0
Pulse Width = 300 µs
1 % Duty Cycle
10
Tj = 25 °C
1
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0.01
0.1
0.01
0.1
1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
100
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number 88675
22-Aug-06
www.vishay.com
3
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
See note
0.404(10.26)
0.384(9.75)
0.190(4.83)
0.170(4.32)
0.415 (10.54) MAX.
See note
0.076Ref.
(1.93)ref.
(4.70)
0.185
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.110(2.79)
0.100(2.54)
0.370 (9.40)
0.360 (9.14)
0.076Ref.
(1.93)
Ref.
7°Ref.
(1.39)
0.045 (1.14)
0.055
45°Ref.
0.113 (2.87)
0.103 (2.62)
0.140(3.56)DIA.
0.125(3.17)DIA.
0.135(3.43)DIA.
0.122(3.08)DIA.
0.671(17.04)
0.651(16.54)
0.600(15.24)
0.580(14.73)
0.145 (3.68)
0.135 (3.43)
PIN
7°Ref.
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.350(8.89)
0.330(8.38)
0.350 (8.89)
0.330 (8.38)
3
1
2
PIN
2
3
1
0.191(4.85)
0.171(4.35)
7°Ref.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.560(14.22)
0.530(13.46)
0.110 (2.79)
0.100 (2.54)
0.057(1.45)
0.045(1.14)
0.057 (1.45)
0.045 (1.14)
0.080(2.03)
0.065(1.65)
0.110(2.79)
0.100(2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035(0.89)
0.025(0.64)
0.035 (0.90)
0.028 (0.70)
0.025(0.64)
0.015(0.38)
0.105(2.67)
0.095(2.41)
0.104 (2.65)
0.096 (2.45)
0.028 (0.71)
0.020(0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.205(5.21)
0.195(4.95)
Note:Copperexposure is allowablefor 0.005(0.13)Max. from the body
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
0.591(15.00)
2
0.670 (17.02)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88675
22-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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