MBRB7H45/81 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 7.5A, 45V V(RRM),;型号: | MBRB7H45/81 |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Element, 7.5A, 45V V(RRM), 二极管 |
文件: | 总4页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifiers
Reverse Voltage 35 to 60 V
Forward Current 7.5 A
ITO-220AC (MBRF7Hxx)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
TO-220AC (MBR7Hxx)
0.110 (2.80)
0.100 (2.54)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
DIA.
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
DIA.
DIA.
0.113 (2.87)
0.103 (2.62)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
PIN
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
1
2
0.191 (4.85)
0.171 (4.35)
PIN
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.060 (1.52)
PIN 1
0.560 (14.22)
PIN 1
PIN 2
PIN 2
0.530 (13.46)
CASE
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout TO-263AB
TO-263AB (MBRB7Hxx)
0.42
(10.66)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.33
(8.38)
0.245 (6.22)
MIN
Dimensions in inches
and (millimeters)
K
0.63
(17.02)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
K
1
2
0.08
(2.032)
0-0.01 (0-0.254)
0.12
(3.05)
0.110 (2.79)
0.090 (2.29)
0.24
(6.096)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
0.205 (5.20)
0.195 (4.95)
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Document Number 88796
14-Mar-03
www.vishay.com
1
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol MBR7H35 MBR7H45 MBR7H50 MBR7H60
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max.average forward rectified current (see fig. 1)
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
V
IF(AV)
7.5
15
A
Peak repetitive forward current at TC = 155 °C
(rated VR, 20 KHz sq. wave)
IFRM
EAS
IFSM
A
mJ
A
Non-repetitive avalanche energy
at 25 °C, IAS = 4 A, L = 10 mH
80
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
150
Peak repetitive reverse surge current
at tp = 2.0 µs, 1 KHZ
IRRM
ERSM
VC
1.0
20
0.5
10
A
Peak non-repetitive reverse energy (8/20 µs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
25
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +175
TSTG
–65 to +175
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics (TC = 25 °C unless otherwise noted)
MBR7H35, MBR7H45 MBR7H50, MBR7H60
Parameter
Symbol
Unit
Typ
Max
Typ
Max
Maximum instantaneous
forward voltage(4)
at IF = 7.5 A TJ = 25 °C
at IF = 7.5 A TJ = 125 °C
–
0.50
–
0.63
0.55
0.75
0.66
–
0.58
–
0.73
0.61
0.87
0.72
VF
V
at IF = 15 A
at IF = 15 A
TJ = 25 °C
TJ =125 °C
0.61
0.68
Maximum instantaneous reverse current TJ = 25 °C
at rated DC blocking voltage(4)
TJ =125 °C
–
3.0
50
10
–
2.0
50
10
µA
mA
IR
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
3.0
MBRF
MBRB
3.0
Unit
°C/W
Thermal resistance from junction to case
RθJC
5.0
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300 ms pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR7H35 – MBR7H60
MBRF7H35 – MBRF7H60
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB7H35 – MBRB7H60
TO-263AB
www.vishay.com
2
Document Number 88796
14-Mar-03
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Fig. 1 – Forward Current
Derating Curve
10
175
150
125
100
75
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR, MBRB
8
6
MBRF
4
2
0
50
25
0
25
75
100
125
150
175
50
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
100
10
10
1
TJ = 150°C
TJ = 125°C
0.1
TJ = 150°C
TJ = 25°C
TJ = 125°C
1
0.1
0.01
0.001
0.0001
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
TJ = 25°C
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
0.01
0
20
40
60
80
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient
Thermal Impedance
1000
100
10
10
1.0
0.1
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
1
0.01
0.1
1
10
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88796
14-Mar-03
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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