MBRD340TRRPBF [VISHAY]

Schottky Rectifier, 3.0 A; 肖特基整流器, 3.0一个
MBRD340TRRPBF
型号: MBRD340TRRPBF
厂家: VISHAY    VISHAY
描述:

Schottky Rectifier, 3.0 A
肖特基整流器, 3.0一个

整流二极管
文件: 总7页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
Vishay Semiconductors  
Schottky Rectifier, 3.0 A  
FEATURES  
Base  
cathode  
• Popular D-PAK outline  
4, 2  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
3.0 A  
IF(AV)  
VR  
20 V, 30 V, 40 V  
0.49 V  
DESCRIPTION  
VF at IF  
IRM  
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
surface mount Schottky rectifier has been designed for  
applications requiring low forward drop and small foot prints  
on PC boards. Typical applications are in disk drives,  
switching power supplies, converters, freewheeling diodes,  
battery charging, and reverse battery protection.  
20 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
20 to 40  
490  
tp = 5 μs sine  
A
VF  
3 Apk, TJ = 125 °C  
0.49  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-MBRD320PbF VS-MBRD330PbF VS-MBRD340PbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
20  
30  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
IF(AV)  
50 % duty cycle at TL = 133 °C, rectangular waveform  
3.0  
Following any rated load  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
490  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 16 mH  
75  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
8.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 94313  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
Schottky Rectifier, 3.0 A  
Vishay Semiconductors  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TYP.  
0.48  
0.58  
0.41  
0.55  
0.02  
10.7  
189  
5.0  
MAX.  
0.6  
UNITS  
3 A  
TJ = 25 °C  
6 A  
0.7  
Maximum forward voltage drop  
See fig. 1  
(1)  
VFM  
V
3 A  
0.49  
0.625  
0.2  
TJ = 125 °C  
6 A  
TJ = 25 °C  
TJ = 125 °C  
Maximum reverse leakage current  
See fig. 2  
(1)  
IRM  
V
R = Rated VR  
mA  
20  
Typical junction capacitance  
Typical series inductance  
CT  
LS  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured lead to lead 5 mm from package body  
Rated VR  
-
pF  
nH  
-
Maximum voltage rate of change  
dV/dt  
-
10 000  
V/μs  
Note  
(1)  
Pulse width < 300 μs, duty cycle < 2 %  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
(1)  
Maximum junction temperature range  
Maximum storage temperature range  
TJ  
- 40 to 150  
- 40 to 175  
°C  
TStg  
Maximum thermal resistance,  
junction to case  
DC operation  
See fig. 4  
RthJC  
6.0  
80  
°C/W  
Maximum thermal resistance,  
junction to ambient  
RthJA  
0.3  
g
Approximate weight  
0.01  
oz.  
MBRD320  
Marking device  
Case style D-PAK (similar to TO-252AA)  
MBRD330  
MBRD340  
Note  
dPtot  
1
(1)  
------------- < -------------- thermal runaway condition for a diode on its own heatsink  
dTJ RthJA  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94313  
Revision: 14-Jan-11  
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
Schottky Rectifier, 3.0 A  
Vishay Semiconductors  
100  
10  
100  
TJ = 150 °C  
10  
TJ = 125 °C  
1
0.1  
TJ = 100 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 75 °C  
TJ = 50 °C  
1
0.01  
0.001  
TJ = 25 °C  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VR - Reverse Voltage (V)  
VFM - Forward Voltage Drop (V)  
Fig. 1 - Maximum Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
1000  
TJ = 25 °C  
100  
10  
0
5
10 15 20 25 30  
35 40 45  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
PDM  
1
t1  
D = 0.75  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
t2  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
Single pulse  
(thermal resistance)  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
Document Number: 94313  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
Schottky Rectifier, 3.0 A  
Vishay Semiconductors  
160  
150  
140  
130  
120  
110  
100  
2.5  
2.0  
1.5  
1.0  
0.5  
0
RMS limit  
DC  
DC  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
Square wave (D = 0.50)  
80 % rated VR applied  
See note (1)  
0
1
2
3
4
5
1
2
3
4
5
0
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Fig. 6 - Forward Power Loss Characteristics  
1000  
100  
At any rated load condition  
and with rated VRRM applied  
following surge  
10  
10  
100  
1000  
10 000  
tp - Square Wave Pulse Duration (µs)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC  
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94313  
Revision: 14-Jan-11  
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF  
Schottky Rectifier, 3.0 A  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS- MBR  
D
3
40  
TR PbF  
1
2
3
4
5
6
7
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product  
Schottky MBR series  
D = TO-252AA (D-PAK)  
Current rating (3 = 3 A)  
20 = 20 V  
30 = 30 V  
40 = 40 V  
Voltage ratings  
None = Tube (50 pieces)  
TR = Tape and reel  
TRL = Tape and reel (left oriented)  
TRR = Tape and reel (right oriented)  
PbF = Lead (Pb)-free  
-
7
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95016  
Part marking information  
Packaging information  
www.vishay.com/doc?95059  
www.vishay.com/doc?95033  
Document Number: 94313  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
5
Outline Dimensions  
Vishay High Power Products  
D-PAK (TO-252AA)  
DIMENSIONS in millimeters and inches  
(5)  
(3)  
A
Pad layout  
C
A
E
0.265  
(6.74)  
M
C A B  
b3  
0.010  
MIN.  
c2  
A
H
E1  
L3 (3)  
Ø 1  
4
4
Ø 2  
0.245  
(6.23)  
B
MIN.  
Seating  
plane  
D1  
D (5)  
0.488 (12.40)  
0.409 (10.40)  
L4  
M
1
3
3
2
1
2
0.089  
MIN.  
(2.28)  
(2) L5  
Detail “C”  
A
0.06  
(1.524)  
b
MIN.  
c
b2  
C A B  
0.010  
e
2 x  
0.093 (2.38)  
0.085 (2.18)  
Detail “C”  
(L1)  
Rotated 90 °CW  
Scale: 20:1  
H
Lead tip  
(7)  
C
Gauge  
plane  
C
Seating  
plane  
C
L2  
A1  
Ø
L
MILLIMETERS  
INCHES  
MIN.  
MILLIMETERS  
INCHES  
MIN. MAX.  
0.090 BSC  
SYMBOL  
NOTES  
SYMBOL  
NOTES  
MIN.  
2.18  
-
MAX.  
2.39  
0.13  
0.89  
1.14  
5.46  
0.61  
0.89  
6.22  
-
MAX.  
0.094  
0.005  
0.035  
0.045  
0.215  
0.024  
0.035  
0.245  
-
MIN.  
MAX.  
A
A1  
b
0.086  
-
e
H
2.29 BSC  
9.40  
1.40  
10.41  
1.78  
0.370  
0.055  
0.410  
0.070  
0.64  
0.76  
4.95  
0.46  
0.46  
5.97  
5.21  
6.35  
4.32  
0.025  
0.030  
0.195  
0.018  
0.018  
0.235  
0.205  
0.250  
0.170  
L
b2  
b3  
c
L1  
L2  
L3  
L4  
L5  
Ø
2.74 BSC  
0.51 BSC  
0.108 REF.  
0.020 BSC  
3
0.89  
1.27  
1.02  
1.52  
10°  
0.035  
0.050  
0.040  
0.060  
10°  
3
2
c2  
D
-
-
0.045  
0°  
5
3
5
3
1.14  
0°  
D1  
E
6.73  
-
0.265  
-
Ø1  
Ø2  
0°  
15°  
0°  
15°  
E1  
25°  
35°  
25°  
35°  
Notes  
(1)  
(2)  
(3)  
(4)  
(5)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Lead dimension uncontrolled in L5  
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad  
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip  
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outermost extremes of the plastic body  
(6)  
(7)  
(8)  
Dimension b1 and c1 applied to base metal only  
Datum A and B to be determined at datum plane H  
Outline conforms to JEDEC outline TO-252AA  
Document Number: 95016  
Revision: 04-Nov-08  
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

相关型号:

MBRD345

SCHOTTKY BARRIER RECTIFIER DIODES
SUNMATE

MBRD350

SWITCHMODE⑩ Power Rectifirers DPAK Surface Mount Package
MOTOROLA

MBRD350

SWITCHMODE Power Rectifiers
ONSEMI

MBRD350-G

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, TO-250AA, SIMILAR TO TO-250AA, DPAK-3
SENSITRON

MBRD350-GT4

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, TO-250AA, SIMILAR TO TO-250AA, DPAK-3
SENSITRON

MBRD350-T

Rectifier Diode,
MCC

MBRD350-T3

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, TO-252, DPAK-3/2
WTE

MBRD350-T4

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, TO-250AA, SIMILAR TO TO-250AA, DPAK-3
SENSITRON

MBRD350-TP

Rectifier Diode,
MCC

MBRD350G

SWITCHMODE Power Rectifiers
ONSEMI

MBRD350L

3 Amp Schottky Barrier Rectifier 20
MCC

MBRD350L-TP

暂无描述
MCC